BAV 199 B6327
  • Share:

Infineon Technologies BAV 199 B6327

Manufacturer No:
BAV 199 B6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV 199 B6327, produced by Infineon Technologies, is a silicon low-leakage diode array designed for various electronic applications. This component features a dual diode configuration in a series connection, making it suitable for medium-speed switching and low-leakage applications. The diodes are packaged in a small SOT-23 surface-mount device (SMD) plastic package, which is Pb-free and RoHS compliant. This diode array is also qualified according to the AEC Q101 standard, ensuring its reliability in automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Diode Reverse Voltage VR 80 V
Peak Reverse Voltage VRM 85 V
Forward Current IF 200 mA
Non-repetitive Peak Surge Forward Current IFSM 4.5 (t = 1 µs), 0.5 (t = 1 s) A
Total Power Dissipation Ptot 330 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
Forward Voltage VF 900 to 1250 mV (at different IF values)
Reverse Recovery Time trr 0.6 to 1.5 µs
Diode Capacitance CT 2 pF
Package Type SOT-23
No. of Pins 3

Key Features

  • Dual Diode Configuration: The BAV 199 B6327 features two diodes connected in series, enhancing its functionality in various applications.
  • Low-Leakage Applications: Designed for low-leakage current, making it suitable for applications requiring minimal reverse current.
  • Medium-Speed Switching: Offers medium-speed switching times, balancing between speed and efficiency.
  • Pb-free and RoHS Compliant: The SOT-23 package is lead-free and compliant with RoHS standards, ensuring environmental sustainability.
  • AEC Q101 Qualified: Qualified according to the AEC Q101 standard, ensuring reliability and performance in automotive and other demanding environments.
  • Wide Operating Temperature Range: Operates within a temperature range of -65°C to 150°C, making it versatile for various conditions.

Applications

  • Automotive Systems: Suitable for use in automotive electronics due to its AEC Q101 qualification and robust performance.
  • Industrial Electronics: Used in industrial control systems, power supplies, and other industrial applications requiring reliable switching diodes.
  • Consumer Electronics: Found in consumer devices such as power adapters, battery chargers, and other electronic circuits needing medium-speed switching diodes.
  • Power Management: Utilized in power management circuits to ensure efficient and reliable operation.

Q & A

  1. What is the maximum reverse voltage of the BAV 199 B6327?

    The maximum reverse voltage (VRM) is 85V.

  2. What is the forward current rating of the BAV 199 B6327?

    The forward current (IF) is rated at 200mA.

  3. What is the package type of the BAV 199 B6327?

    The diode is packaged in a SOT-23 surface-mount device (SMD).

  4. Is the BAV 199 B6327 RoHS compliant?

    Yes, the BAV 199 B6327 is Pb-free and RoHS compliant.

  5. What is the operating temperature range of the BAV 199 B6327?

    The operating temperature range is from -65°C to 150°C.

  6. What is the reverse recovery time of the BAV 199 B6327?

    The reverse recovery time (trr) is between 0.6 to 1.5 µs.

  7. Is the BAV 199 B6327 qualified for automotive use?

    Yes, it is qualified according to the AEC Q101 standard.

  8. What is the total power dissipation of the BAV 199 B6327?

    The total power dissipation (Ptot) is 330mW.

  9. What is the forward voltage drop of the BAV 199 B6327?

    The forward voltage (VF) ranges from 900 to 1250mV at different forward current values.

  10. What is the diode capacitance of the BAV 199 B6327?

    The diode capacitance (CT) is 2pF.

Product Attributes

Diode Configuration:1 Pair Series Connection
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):1.5 µs
Current - Reverse Leakage @ Vr:5 nA @ 75 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
393

Please send RFQ , we will respond immediately.

Same Series
BAV199E6433HTMA1
BAV199E6433HTMA1
DIODE ARRAY GP 80V 200MA SOT23
BAV 199 B6327
BAV 199 B6327
DIODE ARRAY GP 80V 200MA SOT23
BAV199E6359HTMA1
BAV199E6359HTMA1
DIODE ARRAY 80V 200MA SOT23

Similar Products

Part Number BAV 199 B6327 BAV 99 B6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
Diode Configuration 1 Pair Series Connection 1 Pair Series Connection
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 200mA 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 1.5 µs 4 ns
Current - Reverse Leakage @ Vr 5 nA @ 75 V 150 nA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

Related Product By Categories

BAT54BRW-TP
BAT54BRW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
BAV99WT1G
BAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SC70-3
BAV23A,215
BAV23A,215
Nexperia USA Inc.
DIODE ARRAY GP 200V 225MA SOT23
PMEG4010CPASX
PMEG4010CPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOT1061
STPS20L60CT
STPS20L60CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V TO220AB
BAS40-05-E3-18
BAS40-05-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
STTH6002CPI
STTH6002CPI
STMicroelectronics
DIODE ARRAY GP 200V 30A 3TOPI
RURD620CCS9A-F085
RURD620CCS9A-F085
onsemi
DIODE ARRAY GP 200V 6A DPAK
BAV70DXV6T5
BAV70DXV6T5
onsemi
DIODE ARRAY GP 100V 200MA SOT563
BAS40-06T-7-F-36
BAS40-06T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
BAV99W/DG/B3F
BAV99W/DG/B3F
Nexperia USA Inc.
DIODE ARRAY GP 100V 150MA SC70
BAV99HMT116
BAV99HMT116
Rohm Semiconductor
PMDU RECTIFYING DIODE

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BC847PNH6727XTSA1
BC847PNH6727XTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC817K16E6327HTSA1
BC817K16E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC80740B5003XT
BC80740B5003XT
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
IRF630NPBF
IRF630NPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
BTT60302ERAXUMA1
BTT60302ERAXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TDSO-14
BTS711L1NT
BTS711L1NT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA