MBRD640CTT4G
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onsemi MBRD640CTT4G

Manufacturer No:
MBRD640CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 40V 3A DPAK
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The onsemi MBRD640CTT4G is a high-performance Schottky barrier diode designed for use in various power management applications. This device is part of the MBRD series, which is known for its fast switching capabilities and low forward voltage drop. The MBRD640CTT4G is specifically tailored for applications requiring efficient rectification and minimal power loss.

Key Specifications

AttributeValueUnit
Manufactureronsemi
Mfr. Part #MBRD640CTT4G
PackageTO-252-2(DPAK)
Peak Repetitive Reverse Voltage (VRRM)40V
Average Rectified Forward Current (IF(AV))3A
Peak Repetitive Forward Current (IFRM)6A
Nonrepetitive Peak Surge Current (IFSM)75A
Operating Junction Temperature (TJ)-65 to +175°C
Storage Temperature (Tstg)-65 to +175°C
Maximum Instantaneous Forward Voltage (VF) at 3A, TC = 25°C0.7V
Maximum Thermal Resistance, Junction-to-Ambient (RθJA)80°C/W

Key Features

  • Extremely fast switching and low forward voltage drop, making it ideal for high-efficiency power management.
  • Platinum barrier with avalanche guardrings for enhanced reliability.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.

Applications

The onsemi MBRD640CTT4G is designed for use in a variety of applications, including:

  • Switching power supplies.
  • Inverters.
  • Free-wheeling diodes.
  • Automotive systems requiring high reliability and compliance with AEC-Q101 standards.

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD640CTT4G?
    The peak repetitive reverse voltage (VRRM) is 40V.
  2. What is the average rectified forward current of the MBRD640CTT4G?
    The average rectified forward current (IF(AV)) is 3A.
  3. What is the maximum instantaneous forward voltage at 3A and 25°C?
    The maximum instantaneous forward voltage (VF) at 3A and 25°C is 0.7V.
  4. Is the MBRD640CTT4G Pb-free and RoHS compliant?
    Yes, the MBRD640CTT4G is Pb-free and RoHS compliant.
  5. What are the operating and storage temperature ranges for the MBRD640CTT4G?
    The operating and storage temperature ranges are -65°C to +175°C.
  6. What is the maximum thermal resistance, junction-to-ambient (RθJA), for the MBRD640CTT4G?
    The maximum thermal resistance, junction-to-ambient (RθJA), is 80°C/W.
  7. What are some typical applications for the MBRD640CTT4G?
    Typical applications include switching power supplies, inverters, free-wheeling diodes, and automotive systems.
  8. Is the MBRD640CTT4G AEC-Q101 qualified?
    Yes, the MBRD640CTT4G is AEC-Q101 qualified and PPAP capable.
  9. What is the package type of the MBRD640CTT4G?
    The package type is TO-252-2(DPAK).
  10. What is the nonrepetitive peak surge current (IFSM) for the MBRD640CTT4G?
    The nonrepetitive peak surge current (IFSM) is 75A.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 40 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MBRD640CTT4G MBRD660CTT4G MBRD650CTT4G MBRD640CTT4H MBRD620CTT4G MBRD630CTT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Active Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 60 V 50 V 40 V 20 V 30 V
Current - Average Rectified (Io) (per Diode) 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 100 µA @ 40 V 100 µA @ 60 V 100 µA @ 50 V 100 µA @ 40 V 100 µA @ 20 V 100 µA @ 30 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK

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