SNRVBD660CTT4G
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onsemi SNRVBD660CTT4G

Manufacturer No:
SNRVBD660CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 60V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SNRVBD660CTT4G is a high-performance Schottky diode array manufactured by onsemi. This device is designed for use in various power management and switching applications, offering superior efficiency and reliability. The SNRVBD660CTT4G features a common cathode configuration, making it suitable for a range of electronic systems.

Key Specifications

ParameterValue
Vf - Forward Voltage850 mV
Ifsm - Forward Surge Current75 A
Ir - Reverse Current100 uA
Minimum Operating Temperature-65°C
Voltage Rating60 V
Current Rating3 A
Package TypeTO-252-3, DPAK (2 Leads + Tab), SC-63

Key Features

  • Extremely fast switching capabilities, making it ideal for high-frequency applications.
  • Low forward voltage drop (Vf) of 850 mV, which reduces power losses and enhances efficiency.
  • High forward surge current rating of 75 A, providing robust protection against transient conditions.
  • Low reverse current (Ir) of 100 uA, minimizing leakage and improving overall system reliability.
  • Wide operating temperature range, including a minimum of -65°C, ensuring performance in diverse environmental conditions.

Applications

The SNRVBD660CTT4G is designed for use in various applications, including:

  • Switching power supplies: Its fast switching and low Vf make it suitable for high-efficiency power supply designs.
  • Inverters: The device's high current handling and fast recovery time are beneficial in inverter circuits.
  • Free wheeling diodes: Its low Vf and high surge current capability make it an excellent choice for free wheeling diode applications.

Q & A

  1. What is the forward voltage drop (Vf) of the SNRVBD660CTT4G?
    The forward voltage drop (Vf) is 850 mV.
  2. What is the maximum forward surge current (Ifsm) of the SNRVBD660CTT4G?
    The maximum forward surge current (Ifsm) is 75 A.
  3. What is the reverse current (Ir) of the SNRVBD660CTT4G?
    The reverse current (Ir) is 100 uA.
  4. What is the minimum operating temperature of the SNRVBD660CTT4G?
    The minimum operating temperature is -65°C.
  5. What is the voltage rating of the SNRVBD660CTT4G?
    The voltage rating is 60 V.
  6. What is the current rating of the SNRVBD660CTT4G?
    The current rating is 3 A.
  7. What package type does the SNRVBD660CTT4G come in?
    The SNRVBD660CTT4G comes in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package.
  8. What are some typical applications of the SNRVBD660CTT4G?
    Typical applications include switching power supplies, inverters, and as free wheeling diodes.
  9. Why is the SNRVBD660CTT4G considered suitable for high-frequency applications?
    The SNRVBD660CTT4G is considered suitable for high-frequency applications due to its extremely fast switching capabilities.
  10. Where can I find detailed specifications and datasheets for the SNRVBD660CTT4G?
    Detailed specifications and datasheets can be found on official websites such as onsemi, as well as through distributors like Mouser, Digi-Key, and Xon Electronics.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 60 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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