MBRD630CTT4G
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onsemi MBRD630CTT4G

Manufacturer No:
MBRD630CTT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 30V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The MBRD630CTT4G is a high-performance Schottky barrier rectifier produced by onsemi. This device is part of the MBRD620CT series and is designed for use in switching power supplies, inverters, and as free-wheeling diodes. It features a DPAK-3 surface mount package, making it suitable for a variety of applications requiring efficient and reliable rectification.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 30 V
Average Rectified Forward Current (Per Diode) IF(AV) 3 A
Peak Repetitive Forward Current (Per Diode, Square Wave, Duty = 0.5) IFRM 6 A
Nonrepetitive Peak Surge Current IFSM 75 A
Operating Junction Temperature TJ −65 to +175 °C
Storage Temperature Tstg −65 to +175 °C
Maximum Instantaneous Forward Voltage (iF = 3 Amps, TC = 25°C) VF 0.7 V
Maximum Thermal Resistance, Junction-to-Case RθJC 6 °C/W
Maximum Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W

Key Features

  • Extremely Fast Switching
  • Extremely Low Forward Drop
  • Platinum Barrier with Avalanche Guardrings
  • Pb-Free and RoHS Compliant
  • AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements
  • Corrosion-resistant finish and readily solderable terminal leads
  • ESD Ratings: Machine Model = C, Human Body Model = 3B

Applications

The MBRD630CTT4G is designed for use in various applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes
  • Automotive systems (with AEC-Q101 qualification)
  • Other high-reliability applications requiring fast switching and low forward drop

Q & A

  1. What is the peak repetitive reverse voltage of the MBRD630CTT4G?

    The peak repetitive reverse voltage (VRRM) is 30 V.

  2. What is the average rectified forward current per diode for the MBRD630CTT4G?

    The average rectified forward current (IF(AV)) per diode is 3 A.

  3. What is the maximum instantaneous forward voltage at 3 A and 25°C?

    The maximum instantaneous forward voltage (VF) at 3 A and 25°C is 0.7 V.

  4. Is the MBRD630CTT4G Pb-Free and RoHS Compliant?
  5. What are the ESD ratings for the MBRD630CTT4G?

    The ESD ratings are Machine Model = C and Human Body Model = 3B.

  6. What is the operating junction temperature range for the MBRD630CTT4G?

    The operating junction temperature range is −65 to +175°C.

  7. What is the maximum thermal resistance from junction to case for the MBRD630CTT4G?

    The maximum thermal resistance from junction to case (RθJC) is 6°C/W.

  8. What is the maximum thermal resistance from junction to ambient for the MBRD630CTT4G?

    The maximum thermal resistance from junction to ambient (RθJA) is 80°C/W.

  9. Is the MBRD630CTT4G suitable for automotive applications?
  10. What package type does the MBRD630CTT4G use?

    The MBRD630CTT4G uses a DPAK-3 surface mount package.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io) (per Diode):3A
Voltage - Forward (Vf) (Max) @ If:700 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 30 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MBRD630CTT4G MBRD660CTT4G MBRD640CTT4G MBRD650CTT4G MBRD620CTT4G MBRD630CTT4
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Active Active Obsolete
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 60 V 40 V 50 V 20 V 30 V
Current - Average Rectified (Io) (per Diode) 3A 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 100 µA @ 30 V 100 µA @ 60 V 100 µA @ 40 V 100 µA @ 50 V 100 µA @ 20 V 100 µA @ 30 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK

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