IPG20N04S4L08ATMA1
  • Share:

Infineon Technologies IPG20N04S4L08ATMA1

Manufacturer No:
IPG20N04S4L08ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPG20N04S4L08ATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies. Designed for power management applications, this component is part of Infineon's OptiMOS™ series, known for its efficiency and reliability. The IPG20N04S4L08ATMA1 is particularly suited for applications requiring low on-resistance and high switching speeds, making it ideal for use in automotive, industrial, and consumer electronics. Its compact design and robust performance make it a competitive choice in the power electronics market.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40V
Continuous Drain Current (ID)20A
On-Resistance (RDS(on))8VGS = 10 V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)48W
Operating Temperature-55 to +175°C
PackageTO-252 (DPAK)

Key Features

  • Low on-resistance for reduced power losses.
  • High switching speed for efficient power management.
  • Robust design suitable for harsh environments.
  • Compact TO-252 package for space-constrained applications.
  • Optimized for automotive and industrial applications.

Applications

The IPG20N04S4L08ATMA1 is widely used in various fields, including:

  • Automotive Electronics: Power steering, engine control, and battery management systems.
  • Industrial Automation: Motor drives, power supplies, and inverters.
  • Consumer Electronics: Switching regulators, DC-DC converters, and LED drivers.

Q & A

1. What is the maximum drain-source voltage of the IPG20N04S4L08ATMA1?

The maximum drain-source voltage is 40 V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 8 mΩ at VGS = 10 V.

3. Can this MOSFET be used in automotive applications?

Yes, it is optimized for automotive applications such as power steering and battery management.

4. What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

5. What package does the IPG20N04S4L08ATMA1 come in?

It comes in a TO-252 (DPAK) package.

6. Is this MOSFET suitable for high-speed switching?

Yes, it is designed for high switching speeds, making it ideal for efficient power management.

7. What is the maximum continuous drain current?

The maximum continuous drain current is 20 A.

8. Can it be used in industrial motor drives?

Yes, it is well-suited for industrial motor drives and inverters.

9. What is the gate-source voltage range?

The gate-source voltage range is ±20 V.

10. Is the IPG20N04S4L08ATMA1 suitable for consumer electronics?

Yes, it is commonly used in consumer electronics such as switching regulators and LED drivers.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3050pF @ 25V
Power - Max:54W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
0 Remaining View Similar

In Stock

$1.70
262

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPG20N04S4L08ATMA1 IPG20N04S408ATMA1 IPG20N04S4L07ATMA1 IPG20N04S4L08AATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Standard Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V 40V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A 20A
Rds On (Max) @ Id, Vgs 8.2mOhm @ 17A, 10V 7.6mOhm @ 17A, 10V 7.2mOhm @ 17A, 10V 8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 22µA 4V @ 30µA 2.2V @ 30µA 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V 36nC @ 10V 50nC @ 10V 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 25V 2940pF @ 25V 3980pF @ 25V 3050pF @ 25V
Power - Max 54W 65W 65W 54W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4 PG-TDSON-8-4 PG-TDSON-8-4 PG-TDSON-8-10

Related Product By Categories

NTHD4502NT1G
NTHD4502NT1G
onsemi
MOSFET 2N-CH 30V 2.2A CHIPFET
NTZD3154NT1G
NTZD3154NT1G
onsemi
MOSFET 2N-CH 20V 540MA SOT563
NTMD4840NR2G
NTMD4840NR2G
onsemi
MOSFET 2N-CH 30V 4.5A 8SOIC
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
CSD87502Q2T
CSD87502Q2T
Texas Instruments
MOSFET 2N-CH 30V 5A 6WSON
PMDXB600UNEL,147
PMDXB600UNEL,147
Nexperia USA Inc.
0.6A, 20V, 2-ELEMENT, N CHANNEL,
NX3020NAKVYL
NX3020NAKVYL
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.2A SOT666
MMDF2C03HDR2G
MMDF2C03HDR2G
onsemi
MOSFET N/P-CH 30V 4.1A/3A 8SOIC
NTJD4001NT2G
NTJD4001NT2G
onsemi
MOSFET 2N-CH 30V 0.25A SOT363
NDC7002N_SB9G007
NDC7002N_SB9G007
onsemi
MOSFET 2N-CH 50V 0.51A 6-SSOT
NVMFD5877NLWFT1G
NVMFD5877NLWFT1G
onsemi
MOSFET 2N-CH 60V 6A SO8FL
2N7002DW-13-G
2N7002DW-13-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70WH6327XTSA1
BAV70WH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAW56SE6327BTSA1
BAW56SE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BFS17PE6327HTSA1
BFS17PE6327HTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
IR2113STRPBF
IR2113STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 16SOIC
BSP742RIXUMA1
BSP742RIXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-8
TLE8104EXUMA2
TLE8104EXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
CY7C1041DV33-10ZSXIT
CY7C1041DV33-10ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II