IPG20N04S4L08ATMA1
  • Share:

Infineon Technologies IPG20N04S4L08ATMA1

Manufacturer No:
IPG20N04S4L08ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPG20N04S4L08ATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies. Designed for power management applications, this component is part of Infineon's OptiMOS™ series, known for its efficiency and reliability. The IPG20N04S4L08ATMA1 is particularly suited for applications requiring low on-resistance and high switching speeds, making it ideal for use in automotive, industrial, and consumer electronics. Its compact design and robust performance make it a competitive choice in the power electronics market.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)40V
Continuous Drain Current (ID)20A
On-Resistance (RDS(on))8mΩVGS = 10 V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)48W
Operating Temperature-55 to +175°C
PackageTO-252 (DPAK)

Key Features

  • Low on-resistance for reduced power losses.
  • High switching speed for efficient power management.
  • Robust design suitable for harsh environments.
  • Compact TO-252 package for space-constrained applications.
  • Optimized for automotive and industrial applications.

Applications

The IPG20N04S4L08ATMA1 is widely used in various fields, including:

  • Automotive Electronics: Power steering, engine control, and battery management systems.
  • Industrial Automation: Motor drives, power supplies, and inverters.
  • Consumer Electronics: Switching regulators, DC-DC converters, and LED drivers.

Q & A

1. What is the maximum drain-source voltage of the IPG20N04S4L08ATMA1?

The maximum drain-source voltage is 40 V.

2. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 8 mΩ at VGS = 10 V.

3. Can this MOSFET be used in automotive applications?

Yes, it is optimized for automotive applications such as power steering and battery management.

4. What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

5. What package does the IPG20N04S4L08ATMA1 come in?

It comes in a TO-252 (DPAK) package.

6. Is this MOSFET suitable for high-speed switching?

Yes, it is designed for high switching speeds, making it ideal for efficient power management.

7. What is the maximum continuous drain current?

The maximum continuous drain current is 20 A.

8. Can it be used in industrial motor drives?

Yes, it is well-suited for industrial motor drives and inverters.

9. What is the gate-source voltage range?

The gate-source voltage range is ±20 V.

10. Is the IPG20N04S4L08ATMA1 suitable for consumer electronics?

Yes, it is commonly used in consumer electronics such as switching regulators and LED drivers.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3050pF @ 25V
Power - Max:54W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
0 Remaining View Similar

In Stock

$1.70
262

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPG20N04S4L08ATMA1 IPG20N04S408ATMA1 IPG20N04S4L07ATMA1 IPG20N04S4L08AATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Standard Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V 40V 40V
Current - Continuous Drain (Id) @ 25°C 20A 20A 20A 20A
Rds On (Max) @ Id, Vgs 8.2mOhm @ 17A, 10V 7.6mOhm @ 17A, 10V 7.2mOhm @ 17A, 10V 8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 22µA 4V @ 30µA 2.2V @ 30µA 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V 36nC @ 10V 50nC @ 10V 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 25V 2940pF @ 25V 3980pF @ 25V 3050pF @ 25V
Power - Max 54W 65W 65W 54W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4 PG-TDSON-8-4 PG-TDSON-8-4 PG-TDSON-8-10

Related Product By Categories

2N7002PS/ZLX
2N7002PS/ZLX
NXP Semiconductors
NEXPERIA 2N7002PS - 60 V, 320 MA
NX7002AKS,115
NX7002AKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.17A SC-88
FDY3000NZ
FDY3000NZ
onsemi
MOSFET 2N-CH 20V 600MA SOT563F
FDC6420C
FDC6420C
onsemi
MOSFET N/P-CH 20V 3A/2.2A SSOT-6
STS8DN3LLH5
STS8DN3LLH5
STMicroelectronics
MOSFET 2N-CH 30V 10A 8SO
CSD88599Q5DCT
CSD88599Q5DCT
Texas Instruments
MOSFET 2N-CH 60V 22-VSON-CLIP
NTJD4105CT2G
NTJD4105CT2G
onsemi
MOSFET N/P-CH 20V/8V SOT-363
NVMFD5C466NLWFT1G
NVMFD5C466NLWFT1G
onsemi
MOSFET 2N-CH 40V 52A S08FL
FDS8949-F085
FDS8949-F085
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 6
FDG6318PZ
FDG6318PZ
onsemi
MOSFET 2P-CH 20V 0.5A SC70-6
ECH8667-TL-HX
ECH8667-TL-HX
onsemi
MOSFET 2P-CH 30V 5.5A ECH8
FDC6333C-G
FDC6333C-G
onsemi
MOSFET N-CH 60V SUPERSOT6

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BC847SH6433XTMA1
BC847SH6433XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC 807-25 E6433
BC 807-25 E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
IRLML2402TRPBF
IRLML2402TRPBF
Infineon Technologies
MOSFET N-CH 20V 1.2A SOT23
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
BSS123L7874XT
BSS123L7874XT
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
BTT60302ERAXUMA1
BTT60302ERAXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TDSO-14
BTS4142NNT
BTS4142NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223
BSP762TNT
BSP762TNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8