2N7002PSZ
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Nexperia USA Inc. 2N7002PSZ

Manufacturer No:
2N7002PSZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.32A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The 2N7002PSZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is part of the Trench MOSFET family and is packaged in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for high performance and efficiency in various electronic applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 320 mA
Gate Threshold Voltage (Vgs(th)) 1.1 - 2.4 V
On-Resistance (Rds(on)) @ Id, Vgs 1.6 Ω @ 500 mA, 10 V Ω
Maximum Power Dissipation 990 mW mW
Input Capacitance (Ciss) @ Vds 50 pF @ 10 V pF
Gate Charge (Qg) @ Vgs 0.8 nC @ 4.5 V nC
Package Type SOT363 (SC-88), 6-TSSOP -
Mounting Type Surface Mount -
Operating Temperature (TJ) 150°C °C

Key Features

  • Dual N-channel enhancement mode Field-Effect Transistor (FET)
  • Trench MOSFET technology for high performance and efficiency
  • Small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package
  • Logic Level Gate for easy integration with digital circuits
  • Low On-Resistance (Rds(on)) of 1.6 Ω @ 500 mA, 10 V
  • High maximum drain-source voltage (Vdss) of 60 V
  • Continuous drain current (Id) of 320 mA at 25°C

Applications

  • General-purpose switching applications
  • Low-power DC-DC converters
  • Audio and video switching
  • Power management in portable electronics
  • Automotive and industrial control systems

Q & A

  1. What is the maximum drain-source voltage (Vdss) of the 2N7002PSZ MOSFET?

    The maximum drain-source voltage (Vdss) is 60 V.

  2. What is the continuous drain current (Id) at 25°C for the 2N7002PSZ?

    The continuous drain current (Id) at 25°C is 320 mA.

  3. What is the package type of the 2N7002PSZ MOSFET?

    The package type is SOT363 (SC-88), 6-TSSOP.

  4. What is the typical On-Resistance (Rds(on)) of the 2N7002PSZ?

    The typical On-Resistance (Rds(on)) is 1.6 Ω @ 500 mA, 10 V.

  5. What is the maximum power dissipation of the 2N7002PSZ?

    The maximum power dissipation is 990 mW.

  6. What is the gate threshold voltage (Vgs(th)) range for the 2N7002PSZ?

    The gate threshold voltage (Vgs(th)) range is 1.1 - 2.4 V.

  7. Is the 2N7002PSZ suitable for high-frequency applications?

    Yes, it is suitable due to its low input capacitance and gate charge.

  8. What are some common applications of the 2N7002PSZ MOSFET?

    Common applications include general-purpose switching, low-power DC-DC converters, audio and video switching, power management in portable electronics, and automotive and industrial control systems.

  9. What is the operating temperature range of the 2N7002PSZ?

    The operating temperature (TJ) is up to 150°C.

  10. Does the 2N7002PSZ have a logic level gate?

    Yes, it features a logic level gate for easy integration with digital circuits.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
Power - Max:280mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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