Overview
The 2N7002PSZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is part of the Trench MOSFET family and is packaged in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for high performance and efficiency in various electronic applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 320 | mA |
| Gate Threshold Voltage (Vgs(th)) | 1.1 - 2.4 | V |
| On-Resistance (Rds(on)) @ Id, Vgs | 1.6 Ω @ 500 mA, 10 V | Ω |
| Maximum Power Dissipation | 990 mW | mW |
| Input Capacitance (Ciss) @ Vds | 50 pF @ 10 V | pF |
| Gate Charge (Qg) @ Vgs | 0.8 nC @ 4.5 V | nC |
| Package Type | SOT363 (SC-88), 6-TSSOP | - |
| Mounting Type | Surface Mount | - |
| Operating Temperature (TJ) | 150°C | °C |
Key Features
- Dual N-channel enhancement mode Field-Effect Transistor (FET)
- Trench MOSFET technology for high performance and efficiency
- Small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package
- Logic Level Gate for easy integration with digital circuits
- Low On-Resistance (Rds(on)) of 1.6 Ω @ 500 mA, 10 V
- High maximum drain-source voltage (Vdss) of 60 V
- Continuous drain current (Id) of 320 mA at 25°C
Applications
- General-purpose switching applications
- Low-power DC-DC converters
- Audio and video switching
- Power management in portable electronics
- Automotive and industrial control systems
Q & A
- What is the maximum drain-source voltage (Vdss) of the 2N7002PSZ MOSFET?
The maximum drain-source voltage (Vdss) is 60 V.
- What is the continuous drain current (Id) at 25°C for the 2N7002PSZ?
The continuous drain current (Id) at 25°C is 320 mA.
- What is the package type of the 2N7002PSZ MOSFET?
The package type is SOT363 (SC-88), 6-TSSOP.
- What is the typical On-Resistance (Rds(on)) of the 2N7002PSZ?
The typical On-Resistance (Rds(on)) is 1.6 Ω @ 500 mA, 10 V.
- What is the maximum power dissipation of the 2N7002PSZ?
The maximum power dissipation is 990 mW.
- What is the gate threshold voltage (Vgs(th)) range for the 2N7002PSZ?
The gate threshold voltage (Vgs(th)) range is 1.1 - 2.4 V.
- Is the 2N7002PSZ suitable for high-frequency applications?
Yes, it is suitable due to its low input capacitance and gate charge.
- What are some common applications of the 2N7002PSZ MOSFET?
Common applications include general-purpose switching, low-power DC-DC converters, audio and video switching, power management in portable electronics, and automotive and industrial control systems.
- What is the operating temperature range of the 2N7002PSZ?
The operating temperature (TJ) is up to 150°C.
- Does the 2N7002PSZ have a logic level gate?
Yes, it features a logic level gate for easy integration with digital circuits.
