Overview
The FDD8424H is a dual N and P-Channel enhancement mode PowerTrench® MOSFET produced by onsemi. This device is designed using Fairchild Semiconductor’s advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance. Although the FDD8424H is currently discontinued and not recommended for new designs, it remains a notable component in the realm of power electronics.
Key Specifications
| Parameter | Q1 (N-Channel) | Q2 (P-Channel) | Units |
|---|---|---|---|
| VDS (Drain to Source Voltage) | 40 | -40 | V |
| VGS (Gate to Source Voltage) | ±20 | ±20 | V |
| ID (Continuous Drain Current) | 20 | -20 | A |
| rDS(on) (Static Drain to Source On Resistance) | 24mΩ @ VGS = 10V, ID = 9.0A | 54mΩ @ VGS = -10V, ID = -6.5A | mΩ |
| PD (Power Dissipation) | 30 W @ TC = 25°C | 35 W @ TC = 25°C | W |
| TJ (Operating and Storage Junction Temperature Range) | -55 to +150 | -55 to +150 | °C |
| RθJC (Thermal Resistance, Junction to Case) | 4.1 °C/W | 3.5 °C/W | °C/W |
Key Features
- Dual N and P-Channel enhancement mode MOSFETs.
- Produced using Fairchild Semiconductor’s advanced PowerTrench process.
- Low on-state resistance: 24mΩ for N-Channel and 54mΩ for P-Channel.
- Fast switching speed.
- RoHS Compliant.
- High continuous drain current: 20A for N-Channel and -20A for P-Channel.
- Wide operating and storage junction temperature range: -55°C to +150°C.
Applications
- Inverter applications.
- H-Bridge configurations.
- Other power electronics requiring dual N and P-Channel MOSFETs.
Q & A
- What is the FDD8424H MOSFET?
The FDD8424H is a dual N and P-Channel enhancement mode PowerTrench® MOSFET produced by onsemi.
- Why is the FDD8424H discontinued?
The FDD8424H is discontinued and not recommended for new designs. Users should contact an onsemi representative for alternative components.
- What are the key specifications of the N-Channel MOSFET in the FDD8424H?
The N-Channel MOSFET has a VDS of 40V, VGS of ±20V, continuous ID of 20A, and rDS(on) of 24mΩ at VGS = 10V, ID = 9.0A.
- What are the key specifications of the P-Channel MOSFET in the FDD8424H?
The P-Channel MOSFET has a VDS of -40V, VGS of ±20V, continuous ID of -20A, and rDS(on) of 54mΩ at VGS = -10V, ID = -6.5A.
- What is the thermal resistance of the FDD8424H?
The thermal resistance (RθJC) is 4.1°C/W for the N-Channel and 3.5°C/W for the P-Channel.
- What are the typical applications of the FDD8424H?
The FDD8424H is typically used in inverter applications and H-Bridge configurations.
- Is the FDD8424H RoHS compliant?
Yes, the FDD8424H is RoHS compliant.
- What is the operating and storage junction temperature range of the FDD8424H?
The operating and storage junction temperature range is -55°C to +150°C.
- What should I do if I need a replacement for the FDD8424H?
You should contact an onsemi representative for information on suitable replacement components.
- What is the significance of the PowerTrench process in the FDD8424H?
The PowerTrench process minimizes on-state resistance while maintaining superior switching performance.
