Overview
The FDPC5018SG is a dual N-Channel MOSFET device produced by onsemi, designed to optimize power efficiency in various applications. This device integrates two specialized MOSFETs in a single package, with the control MOSFET (Q1) and synchronous SyncFET™ (Q2) internally connected to facilitate easy placement and routing, particularly in synchronous buck converters.
Key Specifications
| Parameter | Q1 | Q2 | Unit |
|---|---|---|---|
| Drain to Source Voltage (VDS) | 30 | 30 | V |
| Gate to Source Voltage (VGS) | ±20 | ±12 | V |
| Continuous Drain Current (ID) at TC = 25°C | 56 | 109 | A |
| Continuous Drain Current (ID) at TC = 100°C | 35 | 69 | A |
| Pulsed Drain Current (ID) at TA = 25°C | 227 | 704 | A |
| Maximum RDS(on) at VGS = 10 V, ID = 17 A / 32 A | 5.0 mΩ / 6.5 mΩ at VGS = 4.5 V, ID = 14 A | 1.6 mΩ / 2.0 mΩ at VGS = 4.5 V, ID = 28 A | mΩ |
| Input Capacitance (Ciss) at VDS = 15 V, VGS = 0 V, f = 1 MHz | 1224 pF | 4593 pF | pF |
| Output Capacitance (Coss) at VDS = 15 V, VGS = 0 V, f = 1 MHz | 397 pF | 1210 pF | pF |
| Reverse Transfer Capacitance (Crss) at VDS = 15 V, VGS = 0 V, f = 1 MHz | 42 pF | 80 pF | pF |
Key Features
- Low Inductance Packaging: Reduces rise and fall times, resulting in lower switching losses.
- MOSFET Integration: Enables optimum layout for lower circuit inductance and reduced switch node ringing.
- ESD Protection: HBM > 500 V, CDM > 1 kV, MM > 100 V.
- RoHS Compliant: Ensures environmental sustainability.
- SyncFET™ Schottky Body Diode: Embedded Schottky diode in parallel with the MOSFET for improved performance.
Applications
- Computing: Suitable for power management in computing systems.
- Communications: Used in communication equipment for efficient power handling.
- General Purpose Point of Load: Ideal for general-purpose point-of-load applications requiring high efficiency.
Q & A
- What is the FDPC5018SG? The FDPC5018SG is a dual N-Channel MOSFET device designed for optimal power efficiency in synchronous buck converters.
- What are the key applications of the FDPC5018SG? The device is used in computing, communications, and general-purpose point-of-load applications.
- What is the maximum drain-to-source voltage (VDS) for both Q1 and Q2? The maximum VDS for both Q1 and Q2 is 30 V.
- What are the maximum RDS(on) values for Q1 and Q2? For Q1, the maximum RDS(on) is 5.0 mΩ at VGS = 10 V, ID = 17 A, and 6.5 mΩ at VGS = 4.5 V, ID = 14 A. For Q2, it is 1.6 mΩ at VGS = 10 V, ID = 32 A, and 2.0 mΩ at VGS = 4.5 V, ID = 28 A.
- What is the significance of the internal switch node connection? The internal switch node connection facilitates easy placement and routing, particularly in synchronous buck converters.
- Does the FDPC5018SG have ESD protection? Yes, the device has ESD protection with HBM > 500 V, CDM > 1 kV, and MM > 100 V.
- Is the FDPC5018SG RoHS compliant? Yes, the device is RoHS compliant.
- What type of body diode is embedded in the SyncFET™? The SyncFET™ includes an embedded Schottky body diode.
- How does the low inductance packaging benefit the device? The low inductance packaging reduces rise and fall times, resulting in lower switching losses.
- What is the typical package type for the FDPC5018SG? The device is packaged in a Power Clip 56 (PQFN8 5x6) package.
