Overview
The FDG1024NZ is a dual N-Channel logic level enhancement mode field effect transistor (MOSFET) produced by onsemi using their proprietary, high cell density DMOS technology. This device is designed for low voltage applications and serves as a replacement for bipolar digital transistors and small signal MOSFETs. It features very low on-state resistance and minimal gate drive requirements, making it suitable for operation in 1.5 V circuits.
Key Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | - | - | 20 | V |
| Gate to Source Voltage | VGS | - | - | ±8 | V |
| Continuous Drain Current | ID | - | - | 1.2 | A |
| Power Dissipation | PD | - | - | 0.36 | W |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | - | 150 | °C |
| Gate to Source Threshold Voltage | VGS(th) | 0.4 | 0.8 | 1.0 | V |
| Static Drain to Source On Resistance | rDS(on) | - | 160 | 175 | mΩ (at VGS = 4.5 V, ID = 1.2 A) |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 350 | °C/W |
Key Features
- Very low on-state resistance (rDS(on)) with values such as 175 mΩ at VGS = 4.5 V, ID = 1.2 A.
- Low level gate drive requirements, allowing operation in 1.5 V circuits with VGS(th) < 1 V.
- Very small package outline in SC−88/SC−70 6 lead.
- RoHS compliant and halogen-free.
- HBM ESD protection level > 2 kV.
- High cell density DMOS technology to minimize on-state resistance.
Applications
The FDG1024NZ is designed for various low voltage applications, including:
- Replacement for bipolar digital transistors and small signal MOSFETs.
- Use in digital circuits where low on-state resistance and minimal gate drive are required.
- Suitable for applications in consumer electronics, industrial control, and automotive systems.
Q & A
- What is the maximum drain to source voltage for the FDG1024NZ?
The maximum drain to source voltage (VDS) is 20 V.
- What is the continuous drain current rating for this MOSFET?
The continuous drain current (ID) is 1.2 A at TA = 25°C.
- What is the gate to source threshold voltage range for the FDG1024NZ?
The gate to source threshold voltage (VGS(th)) ranges from 0.4 V to 1.0 V.
- Is the FDG1024NZ RoHS compliant and halogen-free?
- What is the thermal resistance, junction to ambient, for this device?
The thermal resistance, junction to ambient (RθJA), is 350 °C/W when mounted on a 1 in^2 pad of 2 oz copper.
- What are the package options for the FDG1024NZ?
The device is available in SC−88/SC−70 6 lead packages.
- Does the FDG1024NZ have ESD protection?
- What is the typical on-state resistance at VGS = 4.5 V and ID = 1.2 A?
The typical on-state resistance (rDS(on)) is 160 mΩ at VGS = 4.5 V and ID = 1.2 A.
- What are the operating and storage junction temperature ranges for this MOSFET?
The operating and storage junction temperature range is −55°C to +150°C.
- Is the FDG1024NZ suitable for high-frequency applications?
The device has dynamic characteristics such as turn-on and turn-off delay times, rise and fall times, and gate charge, making it suitable for high-frequency applications.
