Overview
The STS10DN3LH5 is a dual N-channel MOSFET produced by STMicroelectronics, utilizing the advanced STripFET™ V Power MOSFET technology. This component is designed to achieve very low on-state resistance, making it highly efficient for various power management applications. The MOSFET is packaged in an 8-SOIC surface mount configuration, ensuring compact and reliable integration into a wide range of electronic systems.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 30 V |
| ID (Drain Current) | 10 A |
| RDS(on) (On-State Resistance) | 0.019 Ω |
| Package Type | 8-SOIC |
| Power Dissipation | 2.5 W |
Key Features
- Low on-state resistance (RDS(on)) of 0.019 Ω, enhancing efficiency and reducing power losses.
- Dual N-channel configuration, allowing for versatile use in various circuit designs.
- High drain current capability of 10 A per channel, suitable for high-power applications.
- Compact 8-SOIC surface mount package, facilitating easy integration and space-saving designs.
- Advanced STripFET™ V technology for improved performance and reliability.
Applications
- Power management systems in automotive, industrial, and consumer electronics.
- DC-DC converters and power supplies requiring high efficiency and low on-state resistance.
- Motor control and drive systems where high current handling is necessary.
- Switching applications in audio amplifiers, lighting systems, and other high-power devices.
Q & A
- What is the drain-source voltage rating of the STS10DN3LH5?
The drain-source voltage (VDS) rating is 30 V. - What is the on-state resistance of the STS10DN3LH5?
The on-state resistance (RDS(on)) is 0.019 Ω. - What is the maximum drain current for the STS10DN3LH5?
The maximum drain current (ID) is 10 A per channel. - In what package is the STS10DN3LH5 available?
The STS10DN3LH5 is available in an 8-SOIC surface mount package. - What technology is used in the STS10DN3LH5?
The STS10DN3LH5 uses the advanced STripFET™ V Power MOSFET technology. - What are some typical applications for the STS10DN3LH5?
Typical applications include power management systems, DC-DC converters, motor control systems, and switching applications in high-power devices. - How much power can the STS10DN3LH5 dissipate?
The power dissipation is 2.5 W. - Is the STS10DN3LH5 suitable for high-power applications?
Yes, it is suitable for high-power applications due to its high drain current and low on-state resistance. - Where can I purchase the STS10DN3LH5?
The STS10DN3LH5 can be purchased from various electronic component distributors such as Digi-Key, element14, and NeoBits. - What are the benefits of using the STripFET™ V technology in the STS10DN3LH5?
The benefits include very low on-state resistance, high efficiency, and improved performance and reliability.
