NVMFD5C470NLT1G
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onsemi NVMFD5C470NLT1G

Manufacturer No:
NVMFD5C470NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 40V 36A S08FL
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NVMFD5C470NLT1G is a dual N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. With a compact DFN8 5x6 mm package, it is ideal for space-constrained designs. The MOSFET features a low RDS(on) of 11.5 mΩ at VGS = 10 V, making it suitable for minimizing conduction losses. It is also AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 36 A
Continuous Drain Current (TC = 100°C) ID 25 A
Power Dissipation (TC = 25°C) PD 28 W
Power Dissipation (TC = 100°C) PD 14 W
Pulsed Drain Current (tp = 10 μs) IDM 110 A
Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C
Source Current (Body Diode) IS 23 A
Single Pulse Drain-to-Source Avalanche Energy EAS 49 mJ
Lead Temperature for Soldering Purposes TL 260 °C
Gate Threshold Voltage VGS(TH) 1.2 to 2.2 V
Drain-to-Source On Resistance (VGS = 10 V) RDS(on) 9.2 to 11.5

Key Features

  • Small Footprint: Compact DFN8 5x6 mm package for space-constrained designs.
  • Low RDS(on): Minimizes conduction losses with an RDS(on) of 11.5 mΩ at VGS = 10 V.
  • Low QG and Capacitance: Reduces driver losses.
  • Wettable Flank Option: Available with wettable flanks for enhanced optical inspection (NVMFD5C470NLWF).
  • AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and other demanding environments.
  • Pb-Free and RoHS Compliant: Meets environmental regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Power Management: Ideal for power management in high-current, low-voltage applications.
  • Industrial Control: Used in industrial control systems requiring high reliability and performance.
  • Consumer Electronics: Applicable in consumer electronics where compact design and high efficiency are crucial.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFD5C470NLT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current at 25°C is 36 A.

  3. What is the typical on-resistance at VGS = 10 V?

    The typical on-resistance (RDS(on)) at VGS = 10 V is 11.5 mΩ.

  4. Is the NVMFD5C470NLT1G AEC-Q101 qualified?

    Yes, the NVMFD5C470NLT1G is AEC-Q101 qualified.

  5. What is the operating junction temperature range?

    The operating junction temperature range is −55 to +175°C.

  6. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260°C.

  7. Does the NVMFD5C470NLT1G come in a wettable flank option?

    Yes, it is available with wettable flanks (NVMFD5C470NLWF) for enhanced optical inspection.

  8. Is the NVMFD5C470NLT1G Pb-Free and RoHS compliant?

    Yes, it is Pb-Free and RoHS compliant.

  9. What is the typical gate threshold voltage?

    The typical gate threshold voltage (VGS(TH)) is between 1.2 and 2.2 V.

  10. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 110 A for a pulse width of 10 μs.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs:11.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:590pF @ 25V
Power - Max:3W (Ta), 24W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Same Series
NVMFD5C470NLWFT1G
NVMFD5C470NLWFT1G
MOSFET 2N-CH 40V 36A S08FL

Similar Products

Part Number NVMFD5C470NLT1G NVMFD5C478NLT1G NVMFD5C470NT1G NTMFD5C470NLT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard Standard
Drain to Source Voltage (Vdss) 40V 40V 40V 40V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 36A (Tc) 10.5A (Ta), 29A (Tc) 11.7A (Ta), 36A (Tc) 11A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 5A, 10V 14.5mOhm @ 7.5A, 10V 11.7mOhm @ 10A, 10V 11.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20µA 2.2V @ 20µA 3.5V @ 250µA 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V 8.1nC @ 10V 8nC @ 10V 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 25V 420pF @ 25V 420pF @ 25V 590pF @ 25V
Power - Max 3W (Ta), 24W (Tc) 3.1W (Ta), 23W (Tc) 3.1W (Ta), 28W (Tc) 3W (Ta), 24W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual) 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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