Overview
The NVMFD5C470NLT1G is a dual N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. With a compact DFN8 5x6 mm package, it is ideal for space-constrained designs. The MOSFET features a low RDS(on) of 11.5 mΩ at VGS = 10 V, making it suitable for minimizing conduction losses. It is also AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 36 | A |
| Continuous Drain Current (TC = 100°C) | ID | 25 | A |
| Power Dissipation (TC = 25°C) | PD | 28 | W |
| Power Dissipation (TC = 100°C) | PD | 14 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 110 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 23 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 49 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate Threshold Voltage | VGS(TH) | 1.2 to 2.2 | V |
| Drain-to-Source On Resistance (VGS = 10 V) | RDS(on) | 9.2 to 11.5 | mΩ |
Key Features
- Small Footprint: Compact DFN8 5x6 mm package for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with an RDS(on) of 11.5 mΩ at VGS = 10 V.
- Low QG and Capacitance: Reduces driver losses.
- Wettable Flank Option: Available with wettable flanks for enhanced optical inspection (NVMFD5C470NLWF).
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and other demanding environments.
- Pb-Free and RoHS Compliant: Meets environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Power Management: Ideal for power management in high-current, low-voltage applications.
- Industrial Control: Used in industrial control systems requiring high reliability and performance.
- Consumer Electronics: Applicable in consumer electronics where compact design and high efficiency are crucial.
Q & A
- What is the maximum drain-to-source voltage of the NVMFD5C470NLT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at 25°C?
The continuous drain current at 25°C is 36 A.
- What is the typical on-resistance at VGS = 10 V?
The typical on-resistance (RDS(on)) at VGS = 10 V is 11.5 mΩ.
- Is the NVMFD5C470NLT1G AEC-Q101 qualified?
Yes, the NVMFD5C470NLT1G is AEC-Q101 qualified.
- What is the operating junction temperature range?
The operating junction temperature range is −55 to +175°C.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- Does the NVMFD5C470NLT1G come in a wettable flank option?
Yes, it is available with wettable flanks (NVMFD5C470NLWF) for enhanced optical inspection.
- Is the NVMFD5C470NLT1G Pb-Free and RoHS compliant?
Yes, it is Pb-Free and RoHS compliant.
- What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is between 1.2 and 2.2 V.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 110 A for a pulse width of 10 μs.
