Overview
The NVMFD5C478NLT1G is a dual N-channel power MOSFET produced by onsemi. This component is designed for high-performance applications requiring low on-resistance and high current handling capabilities. With a voltage capacity of 40 volts and a continuous drain current of up to 29 amps, it is suitable for a variety of power management and switching applications. The MOSFET features a small footprint, making it ideal for compact designs.
Key Specifications
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Configuration | Dual N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) @ 25°C | 10.5 A (Ta), 29 A (Tc) |
| On-Resistance (Rds(on)) @ Vgs = 10 V | 14.5 mΩ |
| Gate-Source Threshold Voltage (Vgs(th)) | 1.2 V @ 20 µA |
| Gate-Source Voltage (Vgs) | ±20 V |
| Gate Charge (Qg) @ Vgs = 10 V | 8.1 nC |
| Input Capacitance (Ciss) @ Vds = 25 V | 420 pF |
| Power Dissipation (Pd) | 3.1 W (Ta), 23 W (Tc) |
| Operating Temperature | -55°C to 175°C |
| Package Type | SO-8FL-Dual-8, 8-DFN (5x6) Dual Flag |
| Qualification | AEC-Q101 |
Key Features
- Low On-Resistance: The NVMFD5C478NLT1G features a low on-resistance of 14.5 mΩ, minimizing conduction losses.
- High Current Handling: Capable of handling up to 29 amps of continuous drain current.
- Compact Design: Small footprint of 5 x 6 mm, ideal for compact designs.
- Low Capacitance: Low input capacitance to minimize driver losses.
- High Reliability: Qualified to AEC-Q101 standards, ensuring reliability in automotive and other demanding applications.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Power Management: Ideal for power management systems requiring high current and low on-resistance.
- Switching Applications: Used in switching circuits where high efficiency and reliability are crucial.
- Industrial Control: Applicable in industrial control systems that require robust and efficient power handling.
Q & A
- What is the maximum drain-source voltage of the NVMFD5C478NLT1G?
The maximum drain-source voltage (Vdss) is 40 volts.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (Id) is up to 10.5 amps at ambient temperature (Ta) and 29 amps at case temperature (Tc).
- What is the on-resistance of the NVMFD5C478NLT1G?
The on-resistance (Rds(on)) is 14.5 mΩ at Vgs = 10 V.
- What is the gate-source threshold voltage?
The gate-source threshold voltage (Vgs(th)) is 1.2 V at 20 µA.
- What is the operating temperature range of this MOSFET?
The operating temperature range is -55°C to 175°C.
- What package types are available for the NVMFD5C478NLT1G?
The available package types are SO-8FL-Dual-8 and 8-DFN (5x6) Dual Flag.
- Is the NVMFD5C478NLT1G qualified for automotive applications?
Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive applications.
- What are the key features of the NVMFD5C478NLT1G?
The key features include low on-resistance, high current handling, compact design, low capacitance, and high reliability.
- In what types of applications is the NVMFD5C478NLT1G commonly used?
It is commonly used in automotive systems, power management, switching applications, and industrial control systems.
- What is the typical turn-on and turn-off delay time for this MOSFET?
The typical turn-on delay time is 6 ns, and the typical turn-off delay time is 18 ns.
