Overview
The BUK9K89-100E,115 is a surface-mount MOSFET array manufactured by Nexperia USA Inc., specifically designed for automotive applications. This dual N-channel MOSFET is part of Nexperia's TrenchMOS™ series and complies with the AEC-Q101 standard, ensuring high reliability and performance in demanding automotive environments.
Key Specifications
| Category | Description |
|---|---|
| Manufacturer | Nexperia |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Number of Pins | 8 Pins |
| Number of Elements | 2 Elements (Dual) |
| Operating Temperature | -55°C ~ 175°C TJ |
| Max Power Dissipation | 38 W |
| Continuous Drain Current (ID) | 12.5 A |
| Pulsed Drain Current (IDM) | 50 A |
| Max Dual Supply Voltage | 100 V |
| Rds On (Max) @ Id, Vgs | 85 mΩ @ 5 A, 10 V |
| Vgs(th) (Max) @ Id | 2.1 V @ 1 mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1108 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.8 nC @ 10 V |
| Turn On Delay Time | 3.6 ns |
| Turn Off Delay Time | 22.1 ns |
| Rise Time | 5.8 ns |
| Fall Time (Typ) | 12.1 ns |
| FET Type | 2 N-Channel (Dual) |
| Operating Mode | Enhancement Mode |
| FET Technology | Metal-Oxide Semiconductor |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
Key Features
- Dual N-Channel MOSFET: The BUK9K89-100E,115 features two N-channel MOSFETs in a single package, enhancing efficiency and reducing space requirements.
- AEC-Q101 Compliance: Designed to meet the stringent requirements of the automotive industry, ensuring reliability and performance in harsh environments.
- High Continuous Drain Current: Supports up to 12.5 A continuous drain current and 50 A pulsed drain current, making it suitable for high-power applications.
- Low On-Resistance: With a maximum Rds On of 85 mΩ @ 5 A, 10 V, this MOSFET minimizes power losses and heat generation.
- Logic Level Gate: Compatible with logic level gate drive, simplifying the design and control of the MOSFET.
- Avalanche Rated: Capable of withstanding high-energy pulses, enhancing the component's robustness and reliability.
- ROHS3 Compliant: Meets the latest environmental standards, ensuring the component is free from hazardous substances.
Applications
- Automotive Systems: Ideal for use in various automotive applications such as power steering, fuel injection, and battery management systems due to its AEC-Q101 compliance.
- Power Management: Suitable for power management in high-reliability systems where efficient power switching is critical.
- Industrial Control: Can be used in industrial control systems that require high-power handling and reliability.
- Renewable Energy Systems: Applicable in renewable energy systems such as solar and wind power inverters where high efficiency and reliability are essential.
Q & A
- What is the BUK9K89-100E,115 MOSFET used for?
The BUK9K89-100E,115 is a dual N-channel MOSFET designed for automotive and high-power applications, including power management, industrial control, and renewable energy systems.
- What is the maximum continuous drain current of the BUK9K89-100E,115?
The maximum continuous drain current is 12.5 A.
- What is the maximum supply voltage for the BUK9K89-100E,115?
The maximum dual supply voltage is 100 V.
- Is the BUK9K89-100E,115 AEC-Q101 compliant?
Yes, it is designed to meet the AEC-Q101 standard for automotive applications.
- What is the on-resistance of the BUK9K89-100E,115?
The maximum on-resistance (Rds On) is 85 mΩ @ 5 A, 10 V.
- What is the gate charge of the BUK9K89-100E,115?
The gate charge (Qg) is 16.8 nC @ 10 V.
- Is the BUK9K89-100E,115 ROHS compliant?
Yes, it is ROHS3 compliant.
- What is the operating temperature range of the BUK9K89-100E,115?
The operating temperature range is -55°C to 175°C TJ.
- What is the package type of the BUK9K89-100E,115?
The package type is SOT-1205, 8-LFPAK56.
- Does the BUK9K89-100E,115 have avalanche rating?
Yes, it is avalanche rated.
- What is the typical fall time of the BUK9K89-100E,115?
The typical fall time is 12.1 ns.
