2N7002VC-7
  • Share:

Diodes Incorporated 2N7002VC-7

Manufacturer No:
2N7002VC-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.28A SOT-563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002VC-7 is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer high performance and reliability in a compact, ultra-small surface mount package (SOT563). It is particularly suited for applications requiring low on-resistance, low gate threshold voltage, and fast switching speeds. The 2N7002VC-7 is also fully RoHS compliant, lead-free, and halogen and antimony free, making it an environmentally friendly choice.

Key Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Voltage VDSS 60 V @TA = +25°C unless otherwise specified
Gate-Source Voltage (Continuous) VGSS ±20 V @TA = +25°C unless otherwise specified
Gate-Source Voltage (Pulsed) VGSS ±40 V @TA = +25°C unless otherwise specified
Drain Current (Continuous) ID 280 mA @TA = +25°C unless otherwise specified
Drain Current (Pulsed) IDM 1.5 A @TA = +25°C unless otherwise specified
Total Power Dissipation PD 150 mW @TA = +25°C unless otherwise specified
Thermal Resistance, Junction to Ambient RθJA 833 °C/W @TA = +25°C unless otherwise specified
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) 7.5 - 13.5 Ω VGS = 5V, ID = 0.05A; VGS = 10V, ID = 0.5A, Tj = 125°C
Input Capacitance Ciss 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 5.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Turn-On Delay Time tD(ON) 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD(OFF) 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω

Key Features

  • Dual N-channel enhancement mode MOSFET
  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package (SOT563)
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, 'Green' device
  • Qualified to JEDEC standards and AEC-Q101 for high reliability
  • Manufactured in IATF 16949 certified facilities

Applications

The 2N7002VC-7 is suitable for a variety of applications, including:

  • General-purpose switching
  • Power management
  • Automotive systems (with Q-suffix part for specific automotive requirements)
  • Consumer electronics
  • Industrial control systems
  • Low-power DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the 2N7002VC-7?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the typical gate threshold voltage of the 2N7002VC-7?

    The gate threshold voltage (VGS(th)) ranges from 1.0V to 2.5V.

  3. What is the maximum continuous drain current of the 2N7002VC-7?

    The maximum continuous drain current (ID) is 280mA.

  4. Is the 2N7002VC-7 RoHS compliant?
  5. What is the thermal resistance, junction to ambient, of the 2N7002VC-7?

    The thermal resistance, junction to ambient (RθJA), is 833°C/W.

  6. What is the operating temperature range of the 2N7002VC-7?

    The operating and storage temperature range is -55°C to +150°C.

  7. What are the key features of the 2N7002VC-7's package?

    The device comes in an ultra-small surface mount package (SOT563), is halogen and antimony free, and has a 'Green' molding compound.

  8. Is the 2N7002VC-7 suitable for automotive applications?
  9. What are the typical applications of the 2N7002VC-7?
  10. What is the turn-on delay time of the 2N7002VC-7?

    The turn-on delay time (tD(ON)) is approximately 20ns.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:280mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:150mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

$0.44
686

Please send RFQ , we will respond immediately.

Same Series
2N7002VAC-7
2N7002VAC-7
MOSFET 2N-CH 60V 0.28A SOT-563

Similar Products

Part Number 2N7002VC-7 2N7002V-7 2N7002VA-7 2N7002VAC-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) - 2 N-Channel (Dual)
FET Feature Standard Standard - Standard
Drain to Source Voltage (Vdss) 60V 60V - 60V
Current - Continuous Drain (Id) @ 25°C 280mA 280mA - 280mA
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 50pF @ 25V - 50pF @ 25V
Power - Max 150mW 150mW - 150mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 - SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 - SOT-563

Related Product By Categories

NTJD4401NT1G
NTJD4401NT1G
onsemi
MOSFET 2N-CH 20V 630MA SOT363
PMDPB56XNEAX
PMDPB56XNEAX
Nexperia USA Inc.
MOSFET 2N-CH 30V 3.1A DFN2020D-6
PMDXB600UNEZ
PMDXB600UNEZ
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.6A 6DFN
FDME1024NZT
FDME1024NZT
onsemi
MOSFET 2N-CH 20V 3.8A 6-MICROFET
2N7002DW-7-F
2N7002DW-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT-363
BSS138DW-7-F
BSS138DW-7-F
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
2N7002PS,125
2N7002PS,125
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
2N7002V
2N7002V
onsemi
MOSFET 2N-CH 60V 280MA SOT563F
STL8DN6LF3
STL8DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
PMZ370UNE,315
PMZ370UNE,315
Nexperia USA Inc.
0.9A, 30V, N CHANNEL, MOSFET, S
STS8C5H30L
STS8C5H30L
STMicroelectronics
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
NTLJD3119CTAG
NTLJD3119CTAG
onsemi
MOSFET N/P-CH 20V 6WDFN

Related Product By Brand

BAS21TWQ-7
BAS21TWQ-7
Diodes Incorporated
DIODE ARRAY GP 250V 200MA SOT363
MBR10100CDTR-G1
MBR10100CDTR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
BAV99T-7-G
BAV99T-7-G
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
BAV21W-7-G
BAV21W-7-G
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
BZX84C5V6S-7-F
BZX84C5V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 5.6V SOT363
BZX84C9V1S-7
BZX84C9V1S-7
Diodes Incorporated
DIODE ZENER ARRAY 9.1V SOT363
BZX84C22W-7
BZX84C22W-7
Diodes Incorporated
DIODE ZENER 22V 200MW SOT323
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BC846AW-7-F
BC846AW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
BCP5316QTA
BCP5316QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BSS123-7-F
BSS123-7-F
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3