2N7002VC-7
  • Share:

Diodes Incorporated 2N7002VC-7

Manufacturer No:
2N7002VC-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.28A SOT-563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002VC-7 is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer high performance and reliability in a compact, ultra-small surface mount package (SOT563). It is particularly suited for applications requiring low on-resistance, low gate threshold voltage, and fast switching speeds. The 2N7002VC-7 is also fully RoHS compliant, lead-free, and halogen and antimony free, making it an environmentally friendly choice.

Key Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Voltage VDSS 60 V @TA = +25°C unless otherwise specified
Gate-Source Voltage (Continuous) VGSS ±20 V @TA = +25°C unless otherwise specified
Gate-Source Voltage (Pulsed) VGSS ±40 V @TA = +25°C unless otherwise specified
Drain Current (Continuous) ID 280 mA @TA = +25°C unless otherwise specified
Drain Current (Pulsed) IDM 1.5 A @TA = +25°C unless otherwise specified
Total Power Dissipation PD 150 mW @TA = +25°C unless otherwise specified
Thermal Resistance, Junction to Ambient RθJA 833 °C/W @TA = +25°C unless otherwise specified
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Gate Threshold Voltage VGS(th) 1.0 - 2.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS(ON) 7.5 - 13.5 Ω VGS = 5V, ID = 0.05A; VGS = 10V, ID = 0.5A, Tj = 125°C
Input Capacitance Ciss 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 5.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Turn-On Delay Time tD(ON) 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay Time tD(OFF) 20 ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω

Key Features

  • Dual N-channel enhancement mode MOSFET
  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package (SOT563)
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, 'Green' device
  • Qualified to JEDEC standards and AEC-Q101 for high reliability
  • Manufactured in IATF 16949 certified facilities

Applications

The 2N7002VC-7 is suitable for a variety of applications, including:

  • General-purpose switching
  • Power management
  • Automotive systems (with Q-suffix part for specific automotive requirements)
  • Consumer electronics
  • Industrial control systems
  • Low-power DC-DC converters

Q & A

  1. What is the maximum drain-source voltage of the 2N7002VC-7?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the typical gate threshold voltage of the 2N7002VC-7?

    The gate threshold voltage (VGS(th)) ranges from 1.0V to 2.5V.

  3. What is the maximum continuous drain current of the 2N7002VC-7?

    The maximum continuous drain current (ID) is 280mA.

  4. Is the 2N7002VC-7 RoHS compliant?
  5. What is the thermal resistance, junction to ambient, of the 2N7002VC-7?

    The thermal resistance, junction to ambient (RθJA), is 833°C/W.

  6. What is the operating temperature range of the 2N7002VC-7?

    The operating and storage temperature range is -55°C to +150°C.

  7. What are the key features of the 2N7002VC-7's package?

    The device comes in an ultra-small surface mount package (SOT563), is halogen and antimony free, and has a 'Green' molding compound.

  8. Is the 2N7002VC-7 suitable for automotive applications?
  9. What are the typical applications of the 2N7002VC-7?
  10. What is the turn-on delay time of the 2N7002VC-7?

    The turn-on delay time (tD(ON)) is approximately 20ns.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:280mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:150mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

$0.44
686

Please send RFQ , we will respond immediately.

Same Series
2N7002VAC-7
2N7002VAC-7
MOSFET 2N-CH 60V 0.28A SOT-563

Similar Products

Part Number 2N7002VC-7 2N7002V-7 2N7002VA-7 2N7002VAC-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) - 2 N-Channel (Dual)
FET Feature Standard Standard - Standard
Drain to Source Voltage (Vdss) 60V 60V - 60V
Current - Continuous Drain (Id) @ 25°C 280mA 280mA - 280mA
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA - 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 50pF @ 25V - 50pF @ 25V
Power - Max 150mW 150mW - 150mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 - SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 - SOT-563

Related Product By Categories

PMDPB56XNEAX
PMDPB56XNEAX
Nexperia USA Inc.
MOSFET 2N-CH 30V 3.1A DFN2020D-6
CSD87350Q5D
CSD87350Q5D
Texas Instruments
MOSFET 2N-CH 30V 40A 8LSON
FDG6321C
FDG6321C
onsemi
MOSFET N/P-CH 25V 500/410MA SC88
CSD88599Q5DCT
CSD88599Q5DCT
Texas Instruments
MOSFET 2N-CH 60V 22-VSON-CLIP
FDG6317NZ
FDG6317NZ
onsemi
MOSFET 2N-CH 20V 0.7A SC70-6
BUK9K13-60EX
BUK9K13-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 40A LFPAK56D
NTGD4167CT1G
NTGD4167CT1G
onsemi
MOSFET N/P-CH 30V 2.6/1.9A 6TSOP
FDD8424H-F085A
FDD8424H-F085A
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
2N7002KDW-HF
2N7002KDW-HF
Comchip Technology
MOSFET N-CH 60VDS 20VGS 340MA SO
FDS8949-F085
FDS8949-F085
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 6
FDG6303N_D87Z
FDG6303N_D87Z
onsemi
MOSFET 2N-CH 25V 0.5A SC70-6
STL13DP10F6
STL13DP10F6
STMicroelectronics
MOSFET 2P-CH 100V 13A PWRFLAT56

Related Product By Brand

BAS16VA-7
BAS16VA-7
Diodes Incorporated
FAST SWITCHING DIODE SOT563 T&R
BAV99W-7
BAV99W-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT323
BAT54CW-7-F-79
BAT54CW-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
BAS40T-7-F
BAS40T-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT523
BAS16Q-13-F
BAS16Q-13-F
Diodes Incorporated
SWITCHING DIODE SOT23 T&R 10K
BAS521LP-7B
BAS521LP-7B
Diodes Incorporated
DIODE GEN PURP 325V 400MA 2DFN
BZX84C27-7-F
BZX84C27-7-F
Diodes Incorporated
DIODE ZENER 27V 300MW SOT23-3
BZX84B3V0Q-7-F
BZX84B3V0Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BCP5616TQTA
BCP5616TQTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
MMBT3904T-13
MMBT3904T-13
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
2N7002-7-F
2N7002-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
74LVC2G34W6-7
74LVC2G34W6-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT26