Overview
The FDG6303N is a dual N-Channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary, high cell density, DMOS technology, which is designed to minimize on-state resistance. It is particularly suited for low voltage applications and can serve as a replacement for bipolar digital transistors and small signal MOSFETs. The FDG6303N is packaged in a compact industry standard SC70-6 surface mount package and is Pb-free and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 25 | V |
| Gate-Source Voltage | VGSS | -0.5 to +8 | V |
| Continuous Drain Current | ID | 0.5 | A |
| Pulsed Drain Current | IDM | 1.5 | A |
| Maximum Power Dissipation | PD | 0.3 | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
| Electrostatic Discharge Rating | ESD | 6.0 kV (Human Body Model) | kV |
| Thermal Resistance, Junction-to-Ambient | RθJA | 415 | °C/W |
| Gate Threshold Voltage | VGS(th) | 0.65 to 1.5 | V |
| Static Drain-Source On-Resistance | RDS(on) | 0.45 Ω @ VGS = 4.5 V, ID = 0.5 A | Ω |
Key Features
- Very low on-state resistance (RDS(ON) = 0.45 Ω @ VGS = 4.5 V, ID = 0.5 A).
- Low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
- Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model).
- Compact industry standard SC70-6 surface mount package.
- Pb-free and RoHS compliant.
Applications
The FDG6303N is suitable for a variety of low voltage applications, including but not limited to:
- Replacement for bipolar digital transistors and small signal MOSFETs.
- Low voltage power switching.
- Digital circuits and logic gates.
- Portable electronics and battery-powered devices.
- Automotive and industrial control systems.
Q & A
- What is the maximum drain-source voltage of the FDG6303N? The maximum drain-source voltage (VDSS) is 25 V.
- What is the continuous drain current rating of the FDG6303N? The continuous drain current (ID) is 0.5 A.
- What is the thermal resistance, junction-to-ambient, of the FDG6303N? The thermal resistance, junction-to-ambient (RθJA), is 415 °C/W.
- Is the FDG6303N Pb-free and RoHS compliant? Yes, the FDG6303N is Pb-free and RoHS compliant.
- What is the gate threshold voltage range of the FDG6303N? The gate threshold voltage (VGS(th)) range is 0.65 to 1.5 V.
- What is the maximum power dissipation of the FDG6303N? The maximum power dissipation (PD) is 0.3 W.
- What is the operating and storage temperature range of the FDG6303N? The operating and storage temperature range (TJ, TSTG) is -55 to 150 °C.
- What is the electrostatic discharge rating of the FDG6303N? The electrostatic discharge rating (ESD) is 6.0 kV (Human Body Model).
- Can the FDG6303N be used in 3 V circuits? Yes, the FDG6303N has low level gate drive requirements, allowing direct operation in 3 V circuits.
- What package type is the FDG6303N available in? The FDG6303N is available in a compact industry standard SC70-6 surface mount package.
