NTHC5513T1G
  • Share:

onsemi NTHC5513T1G

Manufacturer No:
NTHC5513T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 20V CHIPFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHC5513T1G is a dual complementary MOSFET array produced by onsemi. This component is part of the ChipFET™ family and is designed for high-performance applications. It features both N-channel and P-channel MOSFETs in a single package, making it ideal for a variety of power management and switching applications. The device is housed in a compact 1206A surface mount package, enhancing its suitability for space-constrained designs.

Key Specifications

ParameterValue
Voltage Rating (Vds)20 V
Current Rating (Id)2.9 A (N-channel), 2.9 A (P-channel)
On-Resistance (Rds(on))0.058 ohm
Power Dissipation (Pd)1.1 W
Gate Charge (Qg)4 nC, 6 nC
Operating Temperature Range-55°C to +150°C
Package Type1206A Surface Mount

Key Features

  • Dual complementary N-channel and P-channel MOSFETs in a single package.
  • Compact 1206A surface mount package for space-efficient designs.
  • Low on-resistance (Rds(on)) of 0.058 ohm for reduced power losses.
  • High current handling capability with 2.9 A per channel.
  • Wide operating temperature range from -55°C to +150°C.
  • Pb-free and RoHS compliant.

Applications

The NTHC5513T1G is suitable for a variety of applications including power management, switching circuits, DC-DC converters, motor control, and general-purpose power switching. Its compact size and high performance make it an excellent choice for automotive, industrial, and consumer electronics.

Q & A

  1. What is the voltage rating of the NTHC5513T1G MOSFET? The voltage rating (Vds) of the NTHC5513T1G is 20 V.
  2. What is the current handling capability of the NTHC5513T1G? The NTHC5513T1G can handle up to 2.9 A per channel.
  3. What is the on-resistance (Rds(on)) of the NTHC5513T1G? The on-resistance (Rds(on)) is 0.058 ohm.
  4. What is the operating temperature range of the NTHC5513T1G? The operating temperature range is from -55°C to +150°C.
  5. What package type does the NTHC5513T1G use? The NTHC5513T1G is housed in a 1206A surface mount package.
  6. Is the NTHC5513T1G Pb-free and RoHS compliant? Yes, the NTHC5513T1G is Pb-free and RoHS compliant.
  7. What are some typical applications for the NTHC5513T1G? Typical applications include power management, switching circuits, DC-DC converters, motor control, and general-purpose power switching.
  8. What is the power dissipation (Pd) of the NTHC5513T1G? The power dissipation (Pd) is 1.1 W.
  9. What is the gate charge (Qg) of the NTHC5513T1G? The gate charge (Qg) is 4 nC and 6 nC.
  10. Is the NTHC5513T1G suitable for automotive applications? Yes, the NTHC5513T1G is suitable for automotive applications due to its wide operating temperature range and high performance.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.9A, 2.2A
Rds On (Max) @ Id, Vgs:80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:180pF @ 10V
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:ChipFET™
0 Remaining View Similar

In Stock

$1.34
58

Please send RFQ , we will respond immediately.

Same Series
NTHC5513T1
NTHC5513T1
MOSFET N/P-CH 20V CHIPFET

Similar Products

Part Number NTHC5513T1G NTHC5513T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 2.9A, 2.2A 2.9A, 2.2A
Rds On (Max) @ Id, Vgs 80mOhm @ 2.9A, 4.5V 80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V 180pF @ 10V
Power - Max 1.1W 1.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package ChipFET™ ChipFET™

Related Product By Categories

FDS89161LZ
FDS89161LZ
onsemi
MOSFET 2N-CH 100V 2.7A 8SOIC
2N7002DWH6327XTSA1
2N7002DWH6327XTSA1
Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
BSS138DW-7-F
BSS138DW-7-F
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
BSS138AKDW-TP
BSS138AKDW-TP
Micro Commercial Co
DUAL N-CHANNEL MOSFET, SOT-363
FDC6561AN
FDC6561AN
onsemi
MOSFET 2N-CH 30V 2.5A SSOT6
NX3008NBKV,115
NX3008NBKV,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 400MA SOT666
NVMFD5C478NLT1G
NVMFD5C478NLT1G
onsemi
40V 14.5 MOHM T8 S08FL DU
2N7002KDW-HF
2N7002KDW-HF
Comchip Technology
MOSFET N-CH 60VDS 20VGS 340MA SO
ECH8668-TL-H
ECH8668-TL-H
onsemi
MOSFET N/P-CH 20V 7.5A/5A ECH8
FDS8949-F085
FDS8949-F085
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 6
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8
2N7002DWKX-13
2N7002DWKX-13
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT