PMDPB70XPE,115
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Nexperia USA Inc. PMDPB70XPE,115

Manufacturer No:
PMDPB70XPE,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 3A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDPB70XPE,115 is a dual P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of MOSFETs, known for their high performance and reliability. The PMDPB70XPE,115 is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) package, which is ultra thin and provides excellent thermal conduction due to its exposed drain pad.

This device is designed for applications requiring fast switching and low on-resistance. It is particularly suited for use in power management, DC/DC converters, and other high-efficiency electronic systems.

Key Specifications

Parameter Value Unit
Type Dual P-channel enhancement mode FET -
Package DFN2020-6 (SOT1118) -
VDS [max] -20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 79 mΩ
RDSon [max] @ VGS = 2.5 V 123 mΩ
Tj [max] 150 °C
ID [max] -4.2 A
QGD [typ] 1.1 nC
Ptot [max] 0.515 W
VGSth [typ] -1 V
Ciss [typ] 600 pF
Coss [typ] 103 pF

Key Features

  • Trench MOSFET Technology: Offers very fast switching and low on-resistance.
  • Leadless Ultra Thin SMD Package: The DFN2020-6 (SOT1118) package is 2 x 2 x 0.65 mm, providing excellent thermal conduction due to its exposed drain pad.
  • Logic Level Gate: Compatible with low voltage logic signals.
  • High Efficiency: Suitable for use in DC/DC converters and other high-efficiency electronic systems.
  • Automotive Qualified: Though not specifically automotive qualified, it can be used in various demanding applications.

Applications

  • Power Management: Ideal for power management in battery-driven portable devices.
  • DC/DC Converters: Used in high-efficiency DC/DC converters.
  • Small Brushless DC Motor Drive: Suitable for driving small brushless DC motors.
  • Computing and Hard Disc Power Management: Used in power management for computing and hard disc applications.
  • Charging Switch for Portable Devices: Can be used as a charging switch in portable devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMDPB70XPE,115?

    The maximum drain-source voltage (VDS) is -20 V.

  2. What is the package type of the PMDPB70XPE,115?

    The package type is DFN2020-6 (SOT1118), which is a leadless ultra thin SMD package.

  3. What is the maximum on-resistance (RDSon) at VGS = 4.5 V?

    The maximum on-resistance (RDSon) at VGS = 4.5 V is 79 mΩ.

  4. What is the maximum continuous drain current (ID)?

    The maximum continuous drain current (ID) is -4.2 A.

  5. What is the typical gate-source threshold voltage (VGSth)?

    The typical gate-source threshold voltage (VGSth) is -1 V.

  6. What are the typical input and output capacitances (Ciss and Coss)?

    The typical input capacitance (Ciss) is 600 pF, and the typical output capacitance (Coss) is 103 pF.

  7. Is the PMDPB70XPE,115 automotive qualified?

    No, the PMDPB70XPE,115 is not specifically automotive qualified.

  8. What are the operating temperature ranges for the PMDPB70XPE,115?

    The operating temperature range is from -55°C to 150°C (Tj).

  9. What is the maximum total power dissipation (Ptot)?

    The maximum total power dissipation (Ptot) is 0.515 W.

  10. What are some common applications of the PMDPB70XPE,115?

    Common applications include power management in battery-driven portables, DC/DC converters, small brushless DC motor drives, and computing and hard disc power management.

  11. How can I obtain the datasheet and other technical documents for the PMDPB70XPE,115?

    You can obtain the datasheet and other technical documents from the official Nexperia website or through authorized distributors).

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3A
Rds On (Max) @ Id, Vgs:79mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:600pF @ 10V
Power - Max:515mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
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Similar Products

Part Number PMDPB70XPE,115 PMDPB70XP,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 30V
Current - Continuous Drain (Id) @ 25°C 3A 2.9A
Rds On (Max) @ Id, Vgs 79mOhm @ 2A, 4.5V 87mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V 7.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V 680pF @ 15V
Power - Max 515mW 490mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2) 6-HUSON (2x2)

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