PMDPB70XPE,115
  • Share:

Nexperia USA Inc. PMDPB70XPE,115

Manufacturer No:
PMDPB70XPE,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 3A 6HUSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDPB70XPE,115 is a dual P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of MOSFETs, known for their high performance and reliability. The PMDPB70XPE,115 is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) package, which is ultra thin and provides excellent thermal conduction due to its exposed drain pad.

This device is designed for applications requiring fast switching and low on-resistance. It is particularly suited for use in power management, DC/DC converters, and other high-efficiency electronic systems.

Key Specifications

Parameter Value Unit
Type Dual P-channel enhancement mode FET -
Package DFN2020-6 (SOT1118) -
VDS [max] -20 V
VGS [max] 12 V
RDSon [max] @ VGS = 4.5 V; @25°C 79
RDSon [max] @ VGS = 2.5 V 123
Tj [max] 150 °C
ID [max] -4.2 A
QGD [typ] 1.1 nC
Ptot [max] 0.515 W
VGSth [typ] -1 V
Ciss [typ] 600 pF
Coss [typ] 103 pF

Key Features

  • Trench MOSFET Technology: Offers very fast switching and low on-resistance.
  • Leadless Ultra Thin SMD Package: The DFN2020-6 (SOT1118) package is 2 x 2 x 0.65 mm, providing excellent thermal conduction due to its exposed drain pad.
  • Logic Level Gate: Compatible with low voltage logic signals.
  • High Efficiency: Suitable for use in DC/DC converters and other high-efficiency electronic systems.
  • Automotive Qualified: Though not specifically automotive qualified, it can be used in various demanding applications.

Applications

  • Power Management: Ideal for power management in battery-driven portable devices.
  • DC/DC Converters: Used in high-efficiency DC/DC converters.
  • Small Brushless DC Motor Drive: Suitable for driving small brushless DC motors.
  • Computing and Hard Disc Power Management: Used in power management for computing and hard disc applications.
  • Charging Switch for Portable Devices: Can be used as a charging switch in portable devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PMDPB70XPE,115?

    The maximum drain-source voltage (VDS) is -20 V.

  2. What is the package type of the PMDPB70XPE,115?

    The package type is DFN2020-6 (SOT1118), which is a leadless ultra thin SMD package.

  3. What is the maximum on-resistance (RDSon) at VGS = 4.5 V?

    The maximum on-resistance (RDSon) at VGS = 4.5 V is 79 mΩ.

  4. What is the maximum continuous drain current (ID)?

    The maximum continuous drain current (ID) is -4.2 A.

  5. What is the typical gate-source threshold voltage (VGSth)?

    The typical gate-source threshold voltage (VGSth) is -1 V.

  6. What are the typical input and output capacitances (Ciss and Coss)?

    The typical input capacitance (Ciss) is 600 pF, and the typical output capacitance (Coss) is 103 pF.

  7. Is the PMDPB70XPE,115 automotive qualified?

    No, the PMDPB70XPE,115 is not specifically automotive qualified.

  8. What are the operating temperature ranges for the PMDPB70XPE,115?

    The operating temperature range is from -55°C to 150°C (Tj).

  9. What is the maximum total power dissipation (Ptot)?

    The maximum total power dissipation (Ptot) is 0.515 W.

  10. What are some common applications of the PMDPB70XPE,115?

    Common applications include power management in battery-driven portables, DC/DC converters, small brushless DC motor drives, and computing and hard disc power management.

  11. How can I obtain the datasheet and other technical documents for the PMDPB70XPE,115?

    You can obtain the datasheet and other technical documents from the official Nexperia website or through authorized distributors).

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3A
Rds On (Max) @ Id, Vgs:79mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:600pF @ 10V
Power - Max:515mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:6-HUSON (2x2)
0 Remaining View Similar

In Stock

$0.55
277

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMDPB70XPE,115 PMDPB70XP,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 30V
Current - Continuous Drain (Id) @ 25°C 3A 2.9A
Rds On (Max) @ Id, Vgs 79mOhm @ 2A, 4.5V 87mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V 7.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V 680pF @ 15V
Power - Max 515mW 490mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2) 6-HUSON (2x2)

Related Product By Categories

NX3020NAKS,115
NX3020NAKS,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 180MA 6TSSOP
NX3008PBKV,115
NX3008PBKV,115
Nexperia USA Inc.
MOSFET 2P-CH 30V 220MA SOT666
2N7002DW
2N7002DW
onsemi
MOSFET 2N-CH 60V 0.115A SC70-6
2N7002DW-7-F
2N7002DW-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT-363
PMCPB5530X,115
PMCPB5530X,115
Nexperia USA Inc.
MOSFET N/P-CH 20V 6HUSON
NDC7003P
NDC7003P
onsemi
MOSFET 2P-CH 60V 0.34A SSOT6
FDMC8200
FDMC8200
onsemi
MOSFET 2N-CH 30V 8A/12A 8POWER33
CSD87501LT
CSD87501LT
Texas Instruments
MOSFET 2N-CH 30V 10PICOSTAR
PMDPB80XP,115
PMDPB80XP,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 2.7A 6HUSON
ECH8668-TL-H
ECH8668-TL-H
onsemi
MOSFET N/P-CH 20V 7.5A/5A ECH8
FDS8949-F085
FDS8949-F085
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 6
PMGD175XNEAX
PMGD175XNEAX
Nexperia USA Inc.
MOSFET 2 N-CH 30V 900MA SOT363

Related Product By Brand

PTVS14VS1UR/8X
PTVS14VS1UR/8X
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC SOD123W
BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
BZX84-C47/DG/B2,23
BZX84-C47/DG/B2,23
Nexperia USA Inc.
DIODE ZENER 47V 250MW TO236AB
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
BCP56-10,115
BCP56-10,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PBSS5540Z/ZLX
PBSS5540Z/ZLX
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74HCT4851PW,118
74HCT4851PW,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH SELECT 16TSSOP
74HC4050DB,112
74HC4050DB,112
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SSOP
PDZ3.9BGW,118
PDZ3.9BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P