2N7002VAC-7
  • Share:

Diodes Incorporated 2N7002VAC-7

Manufacturer No:
2N7002VAC-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.28A SOT-563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002VAC-7 is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This MOSFET is designed to offer high efficiency and superior switching performance, making it ideal for various power management and control applications. It features a low on-state resistance, low gate threshold voltage, and fast switching speed, which are crucial for high-performance electronic systems.

Key Specifications

CharacteristicSymbolValueUnits
Drain-Source VoltageVDSS60V
Drain-Gate VoltageVDGR60V
Gate-Source Voltage (Continuous)VGSS±20V
Gate-Source Voltage (Pulsed)VGSS±40V
Continuous Drain Current (TA = +25°C)ID210mA
Continuous Drain Current (TA = +85°C)ID150mA
Continuous Drain Current (TA = +100°C)ID135mA
Maximum Body Diode Forward CurrentIS0.5A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)IDM800mA
Total Power Dissipation (TA = +25°C)PD370mW
Thermal Resistance, Junction to AmbientRθJA348°C/W
Thermal Resistance, Junction to CaseRθJC91°C/W
Operating and Storage Temperature RangeTJ, TSTG-55 to +150°C
On-State Resistance (RDS(ON)) at VGS = 5VRDS(ON)7.5Ω

Key Features

  • Low On-Resistance: The 2N7002VAC-7 has a low on-state resistance of 7.5Ω at VGS = 5V, which enhances its efficiency in power management applications.
  • Low Gate Threshold Voltage: This MOSFET features a low gate threshold voltage, making it easier to switch on and off.
  • Low Input Capacitance: It has low input capacitance, which is beneficial for fast switching speeds.
  • Fast Switching Speed: The MOSFET is designed for fast switching, making it suitable for high-frequency applications.
  • Small Surface Mount Package: Available in SOT-563 and SOT-666 packages, it is compact and suitable for space-constrained designs.
  • Totally Lead-Free & Fully RoHS Compliant: The component is lead-free and compliant with RoHS regulations.
  • Halogen and Antimony Free: It is free from halogen and antimony, making it environmentally friendly.

Applications

  • Motor Control: The 2N7002VAC-7 is suitable for motor control applications due to its high efficiency and fast switching capabilities.
  • Power Management Functions: It is ideal for various power management functions, including voltage regulation and power switching.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002VAC-7?
    The maximum drain-source voltage is 60V.
  2. What is the continuous drain current at TA = +25°C?
    The continuous drain current at TA = +25°C is 210mA.
  3. What are the package options for the 2N7002VAC-7?
    The package options are SOT-563 and SOT-666.
  4. Is the 2N7002VAC-7 RoHS compliant?
    Yes, the 2N7002VAC-7 is totally lead-free and fully RoHS compliant.
  5. What is the thermal resistance, junction to ambient, for the 2N7002VAC-7?
    The thermal resistance, junction to ambient, is 348°C/W.
  6. What are the key features of the 2N7002VAC-7?
    The key features include low on-state resistance, low gate threshold voltage, low input capacitance, fast switching speed, and a small surface mount package.
  7. What are the typical applications of the 2N7002VAC-7?
    The typical applications include motor control and power management functions.
  8. What is the maximum body diode forward current?
    The maximum body diode forward current is 0.5A.
  9. What is the pulsed drain current (10µs pulse, duty cycle = 1%)?
    The pulsed drain current is 800mA.
  10. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to +150°C.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:280mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:150mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

$0.12
3,226

Please send RFQ , we will respond immediately.

Same Series
2N7002VAC-7
2N7002VAC-7
MOSFET 2N-CH 60V 0.28A SOT-563

Similar Products

Part Number 2N7002VAC-7 2N7002VC-7 2N7002VA-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) -
FET Feature Standard Standard -
Drain to Source Voltage (Vdss) 60V 60V -
Current - Continuous Drain (Id) @ 25°C 280mA 280mA -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V -
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs - - -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 50pF @ 25V -
Power - Max 150mW 150mW -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 -
Supplier Device Package SOT-563 SOT-563 -

Related Product By Categories

CSD87381PT
CSD87381PT
Texas Instruments
MOSFET 2N-CH 30V 15A 5PTAB
2N7002DWQ-7-F
2N7002DWQ-7-F
Diodes Incorporated
MOSFET 2N-CH 60V 0.23A SOT363
BSS138DW-7-F
BSS138DW-7-F
Diodes Incorporated
MOSFET 2N-CH 50V 0.2A SC70-6
IRF7341TRPBF
IRF7341TRPBF
Infineon Technologies
MOSFET 2N-CH 55V 4.7A 8-SOIC
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
FDMQ86530L
FDMQ86530L
onsemi
MOSFET 4N-CH 60V 8A 12MLP
NX7002AKS,115
NX7002AKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.17A SC-88
FDG6301N
FDG6301N
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
NTZD3154NT5G
NTZD3154NT5G
onsemi
MOSFET 2N-CH 20V 0.54A SOT563
NVMFD5C462NLT1G
NVMFD5C462NLT1G
onsemi
MOSFET 2N-CH 40V 84A S08FL
CSD86350Q5DT
CSD86350Q5DT
Texas Instruments
25V POWERBLOCK N CH MOSFET
2N7002DW-7-F-79
2N7002DW-7-F-79
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

BAT54C-7-G
BAT54C-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
BZX84C3V9TS-7-F
BZX84C3V9TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.9V SOT363
BZX84C33-7-F
BZX84C33-7-F
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23-3
BZX84C36W-7-F
BZX84C36W-7-F
Diodes Incorporated
DIODE ZENER 36V 200MW SOT323
BZX84C9V1-7
BZX84C9V1-7
Diodes Incorporated
DIODE ZENER 9.1V 350MW SOT23-3
BFS17NTA
BFS17NTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23-3
BCP5616QTA
BCP5616QTA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BCX5316-13R
BCX5316-13R
Diodes Incorporated
TRANS PNP 80V 1A SOT89-3
BSN20Q-7
BSN20Q-7
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE
74LVC2G34FW4-7
74LVC2G34FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN