Overview
The FDG6301N is a dual N-Channel logic level enhancement mode field effect transistor (FET) produced by onsemi using their proprietary high cell density DMOS technology. This device is designed for low voltage applications, serving as a replacement for bipolar digital transistors and small signal MOSFETs. It is particularly suited for applications requiring low on-state resistance and very low level gate drive requirements, making it compatible with 3 V circuits.
Key Specifications
| Parameter | Symbol | Min | Max | Units | |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 25 | V |
| Gate-Source Voltage | VGSS | - | - | 8 | V |
| Continuous Drain Current | ID | - | - | 0.22 | A |
| Pulsed Drain Current | ID | - | - | 0.65 | A |
| Maximum Power Dissipation | PD | - | - | 0.3 | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | - | 150 | °C |
| Electrostatic Discharge Rating (Human Body Model) | ESD | - | - | 6 kV | - |
| Gate Threshold Voltage | VGS(th) | 0.65 | 0.85 | 1.5 | V |
| Static Drain-Source On-Resistance (VGS = 4.5 V, ID = 0.22 A) | RDS(on) | - | 2.6 | 4 | Ω |
| Static Drain-Source On-Resistance (VGS = 2.7 V, ID = 0.19 A) | RDS(on) | - | 3.7 | 5 | Ω |
Key Features
- 25 V, 0.22 A Continuous, 0.65 A Peak current capability
- Very low on-state resistance: RDS(ON) = 4 Ω @ VGS = 4.5 V, RDS(ON) = 5 Ω @ VGS = 2.7 V
- Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V)
- Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model)
- Compact industry standard SC70-6 surface mount package
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant
- AEC-Q101 Qualified and PPAP Capable
Applications
The FDG6301N is ideal for low voltage applications, serving as a replacement for bipolar digital transistors and small signal MOSFETs. It is particularly useful in scenarios where low on-state resistance and minimal gate drive requirements are critical.
Q & A
- What is the maximum drain-source voltage of the FDG6301N?
The maximum drain-source voltage (VDSS) is 25 V. - What is the continuous drain current rating of the FDG6301N?
The continuous drain current (ID) is 0.22 A. - What is the peak drain current rating of the FDG6301N?
The peak drain current is 0.65 A. - What is the gate-source threshold voltage range of the FDG6301N?
The gate-source threshold voltage (VGS(th)) ranges from 0.65 V to 1.5 V. - What is the on-state resistance of the FDG6301N at VGS = 4.5 V and ID = 0.22 A?
The on-state resistance (RDS(on)) is typically 2.6 Ω and maximally 4 Ω. - Is the FDG6301N ESD rugged?
Yes, it has a gate-source zener for ESD ruggedness with a rating of >6 kV Human Body Model. - What package type is the FDG6301N available in?
The FDG6301N is available in the SC70-6 surface mount package. - Is the FDG6301N RoHS compliant?
Yes, the FDG6301N is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. - What are the operating and storage temperature ranges for the FDG6301N?
The operating and storage temperature range is -55°C to 150°C. - Is the FDG6301N AEC-Q101 Qualified?
Yes, the FDG6301N is AEC-Q101 Qualified and PPAP Capable.
