Overview
The BSN20Q-7 is a high-performance N-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by Diodes Incorporated. This device is designed to offer low on-state resistance, fast switching speeds, and low input/output leakage, making it ideal for various high-efficiency power management applications. The BSN20Q-7 is packaged in a SOT23-3 surface mount package, ensuring compactness and ease of integration into modern electronic designs.
Key Specifications
| Parameter | Value | Conditions |
|---|---|---|
| Drain-Source Voltage (VDS) | 50V | |
| Continuous Drain Current (ID) | 500mA | TA = +25°C |
| On-State Resistance (RDS(ON)) | 1.8Ω @ VGS = 10V, 2.0Ω @ VGS = 4.5V | |
| Power Dissipation (PD) | 600mW (TA), 920mW (TC) | |
| Input Capacitance (Ciss) | 21.8 - 40 pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Output Capacitance (Coss) | 5.6 - 15 pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance (Crss) | 3.3 - 10 pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time (tD(ON)) | 2.93 ns | VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A |
| Turn-On Rise Time (tR) | 2.99 ns | VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A |
| Turn-Off Delay Time (tD(OFF)) | 9.45 ns | VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A |
| Turn-Off Fall Time (tF) | 8.3 ns | VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A |
Key Features
- Low On-Resistance: The BSN20Q-7 features low on-state resistance of 1.8Ω at VGS = 10V and 2.0Ω at VGS = 4.5V, enhancing efficiency in power management.
- Low Input Capacitance: With an input capacitance of 21.8 - 40 pF, this MOSFET minimizes the impact on high-frequency operations.
- Fast Switching Speed: Fast turn-on and turn-off times (2.93 ns and 9.45 ns respectively) ensure rapid switching, which is crucial for high-performance applications.
- Low Input/Output Leakage: The device exhibits low leakage currents, contributing to overall system efficiency and reliability.
- Totally Lead-Free & Fully RoHS Compliant: The BSN20Q-7 is compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3), ensuring environmental sustainability.
Applications
- Backlighting: Suitable for backlighting systems in displays due to its high efficiency and fast switching capabilities.
- DC-DC Converters: Ideal for use in DC-DC converters where low on-state resistance and fast switching are essential.
- Power Management Functions: Used in various power management applications requiring high efficiency and reliability.
Q & A
- What is the maximum drain-source voltage (VDS) of the BSN20Q-7?
The maximum drain-source voltage (VDS) is 50V. - What is the continuous drain current (ID) at TA = +25°C?
The continuous drain current (ID) is 500mA at TA = +25°C. - What is the on-state resistance (RDS(ON)) at VGS = 10V?
The on-state resistance (RDS(ON)) is 1.8Ω at VGS = 10V. - What is the power dissipation (PD) of the BSN20Q-7?
The power dissipation (PD) is 600mW at TA and 920mW at TC. - What is the input capacitance (Ciss) of the BSN20Q-7?
The input capacitance (Ciss) is 21.8 - 40 pF. - What are the typical turn-on and turn-off times of the BSN20Q-7?
The typical turn-on delay time is 2.93 ns, and the typical turn-off delay time is 9.45 ns. - Is the BSN20Q-7 RoHS compliant?
Yes, the BSN20Q-7 is fully RoHS compliant. - What package type is the BSN20Q-7 available in?
The BSN20Q-7 is available in a SOT23-3 surface mount package. - What are some common applications of the BSN20Q-7?
Common applications include backlighting, DC-DC converters, and power management functions. - What are the benefits of low input/output leakage in the BSN20Q-7?
The low input/output leakage contributes to overall system efficiency and reliability.
