BSN20-7
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Diodes Incorporated BSN20-7

Manufacturer No:
BSN20-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 500MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The BSN20-7 is a high-performance N-Channel Enhancement Mode Field Effect Transistor (MOSFET) manufactured by Diodes Incorporated. This device is designed to offer low on-state resistance (RDS(ON)), fast switching speeds, and low input/output leakage, making it ideal for various high-efficiency power management applications. The BSN20-7 is packaged in a compact SOT23-3 surface mount package, ensuring ease of integration into a wide range of electronic systems.

Key Specifications

Parameter Value Conditions
V(BR)DSS (Drain-Source Breakdown Voltage) 50V VGS = 0V, ID = 250μA
RDS(ON) (On-State Resistance) 1.8Ω @ VGS = 10V, 2.0Ω @ VGS = 4.5V VDS = 5V, ID = 500mA (VGS = 10V), ID = 450mA (VGS = 4.5V)
ID (Continuous Drain Current) 500mA @ TA = +25°C VGS = 10V
PD (Power Dissipation) 600mW @ TA = +25°C
Qgs (Gate-Source Charge) 100 pC VDD = 25V, ID = 250mA
Qgd (Gate-Drain Charge) 100 pC VDD = 25V, ID = 250mA
tD(ON) (Turn-On Delay Time) 2.93 ns VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A
tR (Turn-On Rise Time) 2.99 ns VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A
tD(OFF) (Turn-Off Delay Time) 9.45 ns VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A
tF (Turn-Off Fall Time) 8.3 ns VDD = 30V, VGEN = 10V, RL = 150Ω, RGEN = 50Ω, ID = 0.2A

Key Features

  • Low On-Resistance (RDS(ON))
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-free 'Green' product

Applications

  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Q & A

  1. What is the maximum drain-source breakdown voltage of the BSN20-7 MOSFET?

    The maximum drain-source breakdown voltage (V(BR)DSS) is 50V.

  2. What is the on-state resistance (RDS(ON)) of the BSN20-7 at VGS = 10V?

    The on-state resistance (RDS(ON)) at VGS = 10V is 1.8Ω.

  3. What is the continuous drain current (ID) rating of the BSN20-7 at TA = +25°C?

    The continuous drain current (ID) rating at TA = +25°C is 500mA.

  4. What is the power dissipation (PD) of the BSN20-7 at TA = +25°C?

    The power dissipation (PD) at TA = +25°C is 600mW.

  5. Is the BSN20-7 MOSFET RoHS compliant?
  6. What are some typical applications of the BSN20-7 MOSFET?

    Typical applications include backlighting, DC-DC converters, and power management functions.

  7. What is the turn-on delay time (tD(ON)) of the BSN20-7?

    The turn-on delay time (tD(ON)) is 2.93 ns under specified conditions.

  8. What is the turn-off fall time (tF) of the BSN20-7?

    The turn-off fall time (tF) is 8.3 ns under specified conditions.

  9. What is the package type of the BSN20-7 MOSFET?

    The BSN20-7 is packaged in a SOT23-3 surface mount package.

  10. Is the BSN20-7 halogen-free?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSN20Q-7
BSN20Q-7
MOSFET N-CH 50V 500MA SOT23

Similar Products

Part Number BSN20-7 BSN20Q-7
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 220mA, 10V 1.8Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 10 V 0.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 40 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 600mW (Ta) 600mW (Ta), 920mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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