2N7002TA
  • Share:

Diodes Incorporated 2N7002TA

Manufacturer No:
2N7002TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002TA is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It features a low on-resistance, low gate threshold voltage, and fast switching speed, which are crucial for various electronic systems.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage (RGS ≤ 1.0MΩ) VDGR 60 V
Gate-Source Voltage (Continuous) VGSS ±20 V
Gate-Source Voltage (Non-Repetitive, tp < 50 ms) VGSS ±40 V
Continuous Drain Current ID 115 mA
Pulsed Drain Current ID 800 mA
Maximum Power Dissipation PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 833 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Static Drain-Source On-Resistance (VGS = 10V, ID = 500mA) RDS(ON) 7.5 Ω
Gate Threshold Voltage (VGS(TH)) VGS(TH) 2.5 V @ ID = 250µA
Input Capacitance (Ciss) Ciss 50 pF @ VDS = 25V, VGS = 0V, f = 1.0MHz

Key Features

  • Low On-Resistance: Minimized on-state resistance for efficient power management.
  • Low Gate Threshold Voltage: Ensures easy switching and control.
  • Low Input Capacitance: Reduces the impact of capacitance on switching speed.
  • Fast Switching Speed: Ideal for applications requiring quick and reliable switching.
  • Small Surface Mount Package: SOT-23 package for compact design.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Halogen and Antimony Free: “Green” device suitable for eco-friendly designs.

Applications

  • DC-DC Converters: Efficient power conversion in various power supply systems.
  • Power Management Functions: Ideal for managing power in electronic devices.
  • Battery Operated Systems: Suitable for battery-powered devices requiring efficient power management.
  • Solid-State Relays: Used in relay and solenoid drivers.
  • Motor Control: Small servo motor control and other motor drive applications.
  • Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors: Versatile use in various driver applications.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the 2N7002TA MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the continuous drain current (ID) rating of the 2N7002TA at 25°C?

    The continuous drain current (ID) is 115mA at 25°C.

  3. What is the typical on-resistance (RDS(ON)) of the 2N7002TA?

    The typical on-resistance (RDS(ON)) is 7.5Ω at VGS = 10V and ID = 500mA.

  4. What is the gate threshold voltage (VGS(TH)) of the 2N7002TA?

    The gate threshold voltage (VGS(TH)) is 2.5V at ID = 250µA.

  5. What is the input capacitance (Ciss) of the 2N7002TA?

    The input capacitance (Ciss) is 50pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.

  6. What are the operating and storage temperature ranges for the 2N7002TA?

    The operating and storage temperature ranges are -55°C to +150°C.

  7. Is the 2N7002TA RoHS compliant?

    Yes, the 2N7002TA is totally lead-free and fully RoHS compliant.

  8. What package types are available for the 2N7002TA?

    The 2N7002TA is available in SOT-23 (TO-236AB) packages.

  9. What are some common applications of the 2N7002TA?

    Common applications include DC-DC converters, power management functions, battery-operated systems, solid-state relays, and motor control.

  10. Is the 2N7002TA suitable for automotive applications?

    Yes, it is suitable for automotive applications requiring specific change control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
564

Please send RFQ , we will respond immediately.

Same Series
2N7002TC
2N7002TC
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002TA 2N7002TC 2N7002A 2N7002KA 2N7002T
Manufacturer Diodes Incorporated Diodes Incorporated Diotec Semiconductor Rectron USA onsemi
Product Status Obsolete Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta) 280mA (Ta) 115mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - - - -
Vgs (Max) ±20V ±20V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 330mW (Ta) 330mW (Ta) 350mW (Ta) 225mW (Ta) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 (TO-236) SOT-23 SC-89-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-89, SOT-490

Related Product By Categories

BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
MBR20200CT-G1
MBR20200CT-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 200V TO220
BAT54CW-7-F-79
BAT54CW-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
BZX84C3V3S-7-F
BZX84C3V3S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.3V SOT363
BZX84C2V7T-7-F
BZX84C2V7T-7-F
Diodes Incorporated
DIODE ZENER 2.7V 150MW SOT523
BZX84B5V6Q-7-F
BZX84B5V6Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C30T-7-F
BZX84C30T-7-F
Diodes Incorporated
DIODE ZENER 30V 150MW SOT523
BZX84C16-7-F-31
BZX84C16-7-F-31
Diodes Incorporated
DIODE ZENER 16V 300MW SOT23
BSS84V-7
BSS84V-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SOT-563
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP
74LVC1G08FW5-7
74LVC1G08FW5-7
Diodes Incorporated
IC GATE AND 1CH 2-INP DFN1010-6
74HC04T14-13
74HC04T14-13
Diodes Incorporated
IC INVERTER 6CH 1-INP 14TSSOP