Overview
The BSS123WQ-7-F is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer high efficiency and superior switching performance, making it ideal for various power management applications. It features a low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The MOSFET is packaged in a SOT323 package, which is lead-free and RoHS compliant, and is suitable for automotive applications due to its AEC-Q101 qualification and PPAP capability.
Key Specifications
Characteristic | Symbol | Value | Unit | Test Condition |
---|---|---|---|---|
Drain-Source Voltage | VDSS | 100 | V | VGS = 0V, ID = 250µA |
Drain-Gate Voltage | VDGR | 100 | V | |
Gate-Source Voltage Continuous | VGSS | ±20 | V | |
Drain Current Continuous | ID | 170 | mA | |
Drain Current Pulsed | IDM | 680 | mA | |
Total Power Dissipation | PD | 200 | mW | |
Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W | |
Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
Turn-On Rise Time | tr | 8 | ns | VDD = 30V, ID = 0.28A, RGEN = 6.0Ω, VGS = 10V |
Turn-Off Fall Time | tf | 16 | ns | VDD = 30V, ID = 0.28A, RGEN = 6.0Ω, VGS = 10V |
Turn-On Delay Time | tD(ON) | 8 | ns | VDD = 30V, ID = 0.28A, RGEN = 6.0Ω, VGS = 10V |
Turn-Off Delay Time | tD(OFF) | 13 | ns | VDD = 30V, ID = 0.28A, RGEN = 6.0Ω, VGS = 10V |
Key Features
- Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
- Low Input Capacitance: Reduces the load on the gate driver and improves switching speed.
- Fast Switching Speed: Ideal for high-frequency applications and efficient power management.
- Low Input/Output Leakage: Minimizes power loss and enhances overall efficiency.
- High Drain-Source Voltage Rating: Supports up to 100V, making it suitable for a wide range of applications.
- Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with international regulations.
- Halogen and Antimony Free: A 'green' device that adheres to strict environmental standards.
- AEC-Q101 Qualified, PPAP Capable, and IATF 16949 Certified: Suitable for automotive applications requiring high reliability and quality control.
Applications
- High-Efficiency Power Management: Ideal for applications requiring low power consumption and high switching speeds.
- Small Servo Motor Controls: Suitable for controlling small servo motors due to its fast switching and low leakage characteristics.
- Power MOSFET Gate Drivers: Used in gate driver circuits for other MOSFETs due to its low input capacitance and fast switching.
- Switching Applications: General-purpose switching applications where high efficiency and reliability are crucial.
- Automotive Applications: Qualified for use in automotive systems due to its AEC-Q101 qualification and PPAP capability.
Q & A
- What is the drain-source voltage rating of the BSS123WQ-7-F?
The drain-source voltage rating is 100V.
- What is the continuous drain current of the BSS123WQ-7-F?
The continuous drain current is 170mA.
- What is the package type of the BSS123WQ-7-F?
The package type is SOT323.
- Is the BSS123WQ-7-F RoHS compliant?
Yes, it is fully RoHS compliant and lead-free.
- What are the key features of the BSS123WQ-7-F?
Key features include low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.
- What are the typical applications of the BSS123WQ-7-F?
Typical applications include high-efficiency power management, small servo motor controls, power MOSFET gate drivers, and general switching applications.
- Is the BSS123WQ-7-F suitable for automotive applications?
Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
- What is the thermal resistance, junction to ambient, of the BSS123WQ-7-F?
The thermal resistance, junction to ambient, is 625°C/W.
- What is the operating and storage temperature range of the BSS123WQ-7-F?
The operating and storage temperature range is -55 to +150°C.
- What is the turn-on rise time of the BSS123WQ-7-F?
The turn-on rise time is 8ns under specified test conditions.