BSS123WQ-7-F
  • Share:

Diodes Incorporated BSS123WQ-7-F

Manufacturer No:
BSS123WQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123WQ-7-F is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to offer high efficiency and superior switching performance, making it ideal for various power management applications. It features a low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The MOSFET is packaged in a SOT323 package, which is lead-free and RoHS compliant, and is suitable for automotive applications due to its AEC-Q101 qualification and PPAP capability.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 100 V VGS = 0V, ID = 250µA
Drain-Gate Voltage VDGR 100 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current Continuous ID 170 mA
Drain Current Pulsed IDM 680 mA
Total Power Dissipation PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Turn-On Rise Time tr 8 ns VDD = 30V, ID = 0.28A, RGEN = 6.0Ω, VGS = 10V
Turn-Off Fall Time tf 16 ns VDD = 30V, ID = 0.28A, RGEN = 6.0Ω, VGS = 10V
Turn-On Delay Time tD(ON) 8 ns VDD = 30V, ID = 0.28A, RGEN = 6.0Ω, VGS = 10V
Turn-Off Delay Time tD(OFF) 13 ns VDD = 30V, ID = 0.28A, RGEN = 6.0Ω, VGS = 10V

Key Features

  • Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
  • Low Input Capacitance: Reduces the load on the gate driver and improves switching speed.
  • Fast Switching Speed: Ideal for high-frequency applications and efficient power management.
  • Low Input/Output Leakage: Minimizes power loss and enhances overall efficiency.
  • High Drain-Source Voltage Rating: Supports up to 100V, making it suitable for a wide range of applications.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with international regulations.
  • Halogen and Antimony Free: A 'green' device that adheres to strict environmental standards.
  • AEC-Q101 Qualified, PPAP Capable, and IATF 16949 Certified: Suitable for automotive applications requiring high reliability and quality control.

Applications

  • High-Efficiency Power Management: Ideal for applications requiring low power consumption and high switching speeds.
  • Small Servo Motor Controls: Suitable for controlling small servo motors due to its fast switching and low leakage characteristics.
  • Power MOSFET Gate Drivers: Used in gate driver circuits for other MOSFETs due to its low input capacitance and fast switching.
  • Switching Applications: General-purpose switching applications where high efficiency and reliability are crucial.
  • Automotive Applications: Qualified for use in automotive systems due to its AEC-Q101 qualification and PPAP capability.

Q & A

  1. What is the drain-source voltage rating of the BSS123WQ-7-F?

    The drain-source voltage rating is 100V.

  2. What is the continuous drain current of the BSS123WQ-7-F?

    The continuous drain current is 170mA.

  3. What is the package type of the BSS123WQ-7-F?

    The package type is SOT323.

  4. Is the BSS123WQ-7-F RoHS compliant?

    Yes, it is fully RoHS compliant and lead-free.

  5. What are the key features of the BSS123WQ-7-F?

    Key features include low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

  6. What are the typical applications of the BSS123WQ-7-F?

    Typical applications include high-efficiency power management, small servo motor controls, power MOSFET gate drivers, and general switching applications.

  7. Is the BSS123WQ-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

  8. What is the thermal resistance, junction to ambient, of the BSS123WQ-7-F?

    The thermal resistance, junction to ambient, is 625°C/W.

  9. What is the operating and storage temperature range of the BSS123WQ-7-F?

    The operating and storage temperature range is -55 to +150°C.

  10. What is the turn-on rise time of the BSS123WQ-7-F?

    The turn-on rise time is 8ns under specified test conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.38
2,511

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS123WQ-7-F BSS123W-7-F
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAT54CT-7
BAT54CT-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAT54CW-7-F-79
BAT54CW-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
BAS21W-7
BAS21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BZX84C15TS-7-F
BZX84C15TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 15V SOT363
BZX84C39-7
BZX84C39-7
Diodes Incorporated
DIODE ZENER 39V 300MW SOT23-3
BZX84C39TA
BZX84C39TA
Diodes Incorporated
DIODE ZENER 39V 350MW SOT23-3
BFS17TA
BFS17TA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
BC857A-7-F
BC857A-7-F
Diodes Incorporated
TRANS PNP 45V 0.1A SOT23-3
BCP5616TTC
BCP5616TTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BC847BLD-7
BC847BLD-7
Diodes Incorporated
TRANS NPN 45V 0.2A SOT23-3
74LVC2G34W6-7
74LVC2G34W6-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT26