Overview
The 1N5711WS-13 is a surface mount Schottky barrier diode manufactured by Diodes Incorporated. This component is designed for high-frequency applications and is known for its low forward voltage drop and fast switching times. The diode is packaged in a SOD-323 case, making it suitable for compact and high-density circuit designs.
Although the 1N5711WS-13 is currently listed as obsolete, it remains a significant component in legacy systems and can still be sourced from various electronic component distributors.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Manufacturer | Diodes Incorporated | |
Description | Schottky Barrier Diode | |
Operating Temperature | -55°C to 125°C | °C |
Peak Reverse Voltage (Max) | 70V | V |
Capacitance @ Vr, F | 2pF @ 0V, 1MHz | pF |
Diode Type | Schottky - Single | |
Maximum Forward Current | 15 mA | mA |
Maximum Forward Voltage Drop | 1V | V |
Power Dissipation (Max) | 150 mW | mW |
Package / Case | SOD-323 | |
Lead Free Status / RoHS Status | Lead Free / RoHS compliant |
Key Features
- Low Forward Voltage Drop: The 1N5711WS-13 has a low forward voltage drop, typically around 0.41 to 1.00 V, which is beneficial for reducing power losses in high-frequency applications.
- Fast Switching Times: This diode is characterized by its fast reverse recovery time, typically around 1 ns, making it suitable for high-speed switching applications.
- Compact Packaging: The SOD-323 package is compact and suitable for surface mount technology, allowing for high-density circuit designs.
- High Temperature Range: The diode operates over a wide temperature range from -55°C to 125°C, making it versatile for various environmental conditions.
- RoHS Compliance: The component is lead-free and RoHS compliant, ensuring it meets current environmental standards.
Applications
- RF and Microwave Circuits: The 1N5711WS-13 is often used in RF and microwave circuits due to its low capacitance and fast switching times.
- Switching Power Supplies: Its low forward voltage drop and high switching speed make it suitable for use in switching power supplies.
- High-Frequency Rectification: The diode is used in high-frequency rectification applications where fast recovery times are crucial.
- Automotive and Industrial Electronics: Its wide operating temperature range makes it a good choice for automotive and industrial electronic systems.
Q & A
- Q: What is the peak reverse voltage of the 1N5711WS-13?
A: The peak reverse voltage of the 1N5711WS-13 is 70V. - Q: What is the maximum forward current of the 1N5711WS-13?
A: The maximum forward current of the 1N5711WS-13 is 15 mA. - Q: What is the typical forward voltage drop of the 1N5711WS-13?
A: The typical forward voltage drop of the 1N5711WS-13 is between 0.41 to 1.00 V. - Q: What is the operating temperature range of the 1N5711WS-13?
A: The operating temperature range of the 1N5711WS-13 is from -55°C to 125°C. - Q: Is the 1N5711WS-13 RoHS compliant?
A: Yes, the 1N5711WS-13 is lead-free and RoHS compliant. - Q: What is the package type of the 1N5711WS-13?
A: The 1N5711WS-13 is packaged in a SOD-323 case. - Q: What is the typical reverse recovery time of the 1N5711WS-13?
A: The typical reverse recovery time of the 1N5711WS-13 is around 1 ns. - Q: What are common applications for the 1N5711WS-13?
A: Common applications include RF and microwave circuits, switching power supplies, high-frequency rectification, and automotive and industrial electronics. - Q: Is the 1N5711WS-13 still in production?
A: The 1N5711WS-13 is currently listed as obsolete but can still be sourced from various electronic component distributors. - Q: What is the maximum power dissipation of the 1N5711WS-13?
A: The maximum power dissipation of the 1N5711WS-13 is 150 mW.