Overview
The BAP64LX,315 is a silicon PIN diode manufactured by NXP USA Inc. This component is designed for high-frequency applications, particularly in RF circuits. It is part of NXP's extensive range of semiconductor products and is known for its reliability and performance in various electronic systems.
The BAP64LX,315 is packaged in a SOD-882 package, which is a surface-mounted device (SMD) format, making it suitable for modern PCB designs that require compact and efficient components.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VR (Reverse Voltage) | - | - | - | 60 | V |
| IF (Forward Current) | - | - | - | 100 | mA |
| Ptot (Total Power Dissipation) | Tsp ≤ 90 °C | - | - | 150 | mW |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| Tj (Junction Temperature) | - | -65 | - | 150 | °C |
| VF (Forward Voltage) | IF = 100 mA | - | 0.95 | 1.1 | V |
| IR (Reverse Current) | VR = 60 V | - | - | 100 | nA |
| Cd (Diode Capacitance) | VR = 20 V, f = 1 MHz | - | 0.17 | 0.30 | pF |
Key Features
- High Frequency Performance: The BAP64LX,315 is optimized for high-frequency applications, making it suitable for RF circuits.
- Low Diode Capacitance: With a typical diode capacitance of 0.17 pF at 20 V and 1 MHz, this diode is ideal for applications requiring low capacitance.
- Compact Packaging: Available in the SOD-882 package, this component is designed for surface-mounted devices, facilitating compact PCB designs.
- Wide Temperature Range: The diode operates over a wide temperature range from -65°C to 150°C, ensuring reliability in various environmental conditions.
- Compliance with Regulations: The BAP64LX,315 is compliant with EU Directives RoHS, ELV, and China RoHS, ensuring it meets environmental and safety standards.
Applications
- RF Circuits: The BAP64LX,315 is particularly suited for high-frequency RF circuits due to its low diode capacitance and high-frequency performance.
- Switching and Attenuation: It can be used in switching and attenuation applications where low capacitance and high isolation are required.
- Automotive and Industrial Systems: Given its wide temperature range and robust specifications, it is suitable for use in automotive and industrial electronic systems.
- Telecommunications: The diode can be used in various telecommunications equipment where high-frequency performance is critical.
Q & A
- What is the maximum reverse voltage of the BAP64LX,315?
The maximum reverse voltage (VR) is 60 V.
- What is the typical forward voltage of the BAP64LX,315 at 100 mA?
The typical forward voltage (VF) at 100 mA is 0.95 V.
- What is the diode capacitance at 20 V and 1 MHz?
The diode capacitance (Cd) at 20 V and 1 MHz is typically 0.17 pF.
- What is the storage temperature range for the BAP64LX,315?
The storage temperature range is from -65°C to 150°C.
- Is the BAP64LX,315 compliant with RoHS regulations?
Yes, the BAP64LX,315 is compliant with EU Directives RoHS, ELV, and China RoHS.
- What package types are available for the BAP64LX,315?
The BAP64LX,315 is available in the SOD-882 package.
- What is the maximum forward current of the BAP64LX,315?
The maximum forward current (IF) is 100 mA.
- What is the thermal resistance from junction to solder point for the BAP64LX,315?
The thermal resistance from junction to solder point (Rth(j-sp)) is typically 56 K/W.
- Is the BAP64LX,315 suitable for high-frequency applications?
Yes, the BAP64LX,315 is optimized for high-frequency applications.
- What is the typical reverse current at 60 V for the BAP64LX,315?
The typical reverse current (IR) at 60 V is less than 100 nA.
