BAP70-02,115
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NXP USA Inc. BAP70-02,115

Manufacturer No:
BAP70-02,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 50V 415MW SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP70-02 is a silicon PIN diode produced by NXP USA Inc. This component is housed in an ultra-small SOD523 surface-mounted device (SMD) plastic package, measuring 1.2 mm x 0.8 mm x 0.6 mm. It is designed for high-frequency applications and is known for its high voltage and current-controlled RF resistor characteristics. Although it is not recommended for new designs, it remains a viable option for existing projects and legacy systems.

Key Specifications

ParameterConditionsMinTypMaxUnit
Forward Resistance (rD)IF = 0.5 mA-77100Ω
Forward Resistance (rD)IF = 1 mA-4050Ω
Forward Resistance (rD)IF = 10 mA-5.47Ω
Forward Resistance (rD)IF = 100 mA-1.41.9Ω
Charge Carrier Life Time (τL)Switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA--1.25μs
Series Inductance (LS)f = 100 MHz--0.6nH

Key Features

  • High voltage and current-controlled RF resistor for attenuators
  • Low diode capacitance
  • Very low series inductance
  • AEC-Q101 qualified, ensuring reliability in automotive applications
  • Ultra-small SOD523 SMD plastic package, ideal for space-constrained designs

Applications

  • RF attenuators
  • SAT (Satellite) TV systems
  • Car radio systems

Q & A

  1. What is the package type of the BAP70-02? The BAP70-02 is housed in a SOD523 ultra-small SMD plastic package.
  2. What are the key features of the BAP70-02? Key features include high voltage and current-controlled RF resistor characteristics, low diode capacitance, very low series inductance, and AEC-Q101 qualification.
  3. Is the BAP70-02 recommended for new designs? No, the BAP70-02 is not recommended for new designs but can be used in existing projects and legacy systems.
  4. What are the typical applications of the BAP70-02? Typical applications include RF attenuators, SAT TV systems, and car radio systems.
  5. What is the forward resistance of the BAP70-02 at different current levels? The forward resistance varies from 77 Ω at 0.5 mA to 1.4 Ω at 100 mA.
  6. What is the series inductance of the BAP70-02? The series inductance is approximately 0.6 nH at 100 MHz.
  7. Is the BAP70-02 compliant with environmental regulations? Yes, it is Pb-free, EU RoHS compliant, and halogen-free.
  8. What is the charge carrier life time of the BAP70-02? The charge carrier life time is approximately 1.25 μs when switched from IF = 10 mA to IR = 6 mA.
  9. Where can I find detailed specifications for the BAP70-02? Detailed specifications can be found in the product data sheet available on NXP’s official website.
  10. Can I use the BAP70-02 in automotive applications? Yes, the BAP70-02 is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

Diode Type:PIN - Single
Voltage - Peak Reverse (Max):50V
Current - Max:100 mA
Capacitance @ Vr, F:0.25pF @ 20V, 1MHz
Resistance @ If, F:1.9Ohm @ 100mA, 100MHz
Power Dissipation (Max):415 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
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Similar Products

Part Number BAP70-02,115 BAP70-03,115 BAP50-02,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete
Diode Type PIN - Single PIN - Single PIN - Single
Voltage - Peak Reverse (Max) 50V 50V 50V
Current - Max 100 mA 100 mA 50 mA
Capacitance @ Vr, F 0.25pF @ 20V, 1MHz 0.25pF @ 20V, 1MHz 0.35pF @ 5V, 1MHz
Resistance @ If, F 1.9Ohm @ 100mA, 100MHz 1.9Ohm @ 100mA, 100MHz 5Ohm @ 10mA, 100MHz
Power Dissipation (Max) 415 mW 500 mW 715 mW
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case SC-79, SOD-523 SC-76, SOD-323 SC-79, SOD-523
Supplier Device Package SOD-523 SOD-323 SOD-523

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