BAP65-02,135
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NXP USA Inc. BAP65-02,135

Manufacturer No:
BAP65-02,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 30V 715MW SOD523
Delivery:
Payment:
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iso45001
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iso13485

Product Introduction

Overview

The NXP Semiconductors BAP65-02,135 is a high-performance PIN diode designed for use in a wide range of RF and microwave applications. This diode offers excellent linearity, low insertion loss, and fast switching speed, making it a reliable choice for various circuit designs.

Key Specifications

Parameter Conditions Min Typ Max Unit
Continuous Reverse Voltage (VR) - - - 30 V
Continuous Forward Current (IF) - - - 100 mA
Diode Capacitance At 20V, 1MHz - - 0.375 pF
Diode Forward Resistance At 100mA, 100MHz - - 0.35 Ω
Operating Temperature Range - -65 - 150 °C
Storage Temperature Range - -65 - 150 °C
Total Power Dissipation (Ptot) Tsp ≤ 90 °C - - 715 mW

Key Features

  • PIN diode structure for superior linearity and low distortion
  • High voltage rating of up to 30V and maximum current handling of 100mA
  • Low capacitance of 0.375pF at 20V, 1MHz and low resistance of 350mΩ at 100mA, 100MHz
  • Wide operating temperature range of -65°C to 150°C
  • Compact SOD-523 package for space-constrained designs
  • Very low series inductance
  • AEC-Q101 qualified for automotive applications
  • Compliant with RoHS and REACH regulations for environmental safety

Applications

  • Wireless communications systems
  • Radar and satellite communications
  • Test and measurement equipment
  • Industrial and commercial RF/microwave applications
  • RF switches, attenuators, mixers, phase shifters, limiters, and amplifiers
  • Bandswitch for TV tuners and series diode for mobile communication transmit/receive switch

Q & A

  1. What is the BAP65-02,135 used for?

    The BAP65-02,135 is a high-performance PIN diode used in a wide range of RF and microwave applications, including switches, attenuators, mixers, phase shifters, limiters, and amplifiers.

  2. What are the key specifications of the BAP65-02,135?

    The key specifications include a continuous reverse voltage of up to 30V, continuous forward current of up to 100mA, low capacitance of 0.375pF at 20V, 1MHz, and low resistance of 350mΩ at 100mA, 100MHz.

  3. What is the operating temperature range of the BAP65-02,135?

    The operating temperature range is -65°C to 150°C.

  4. Is the BAP65-02,135 RoHS compliant?
  5. What package type does the BAP65-02,135 come in?

    The BAP65-02,135 comes in a compact SOD-523 package.

  6. What are some of the applications of the BAP65-02,135?

    Applications include wireless communications systems, radar and satellite communications, test and measurement equipment, and industrial and commercial RF/microwave applications.

  7. Is the BAP65-02,135 AEC-Q101 qualified?
  8. What is the total power dissipation of the BAP65-02,135?

    The total power dissipation is up to 715 mW at Tsp ≤ 90 °C.

  9. What is the storage temperature range of the BAP65-02,135?

    The storage temperature range is -65°C to 150°C.

  10. Is the BAP65-02,135 still in production?

Product Attributes

Diode Type:PIN - Single
Voltage - Peak Reverse (Max):30V
Current - Max:100 mA
Capacitance @ Vr, F:0.375pF @ 20V, 1MHz
Resistance @ If, F:350mOhm @ 100mA, 100MHz
Power Dissipation (Max):715 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
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Same Series
BAP65-02,135
BAP65-02,135
RF DIODE PIN 30V 715MW SOD523

Similar Products

Part Number BAP65-02,135 BAP65-02,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Diode Type PIN - Single PIN - Single
Voltage - Peak Reverse (Max) 30V 30V
Current - Max 100 mA 100 mA
Capacitance @ Vr, F 0.375pF @ 20V, 1MHz 0.375pF @ 20V, 1MHz
Resistance @ If, F 350mOhm @ 100mA, 100MHz 350mOhm @ 100mA, 100MHz
Power Dissipation (Max) 715 mW 715 mW
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case SC-79, SOD-523 SC-79, SOD-523
Supplier Device Package SOD-523 SOD-523

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