Overview
The BAP51-02,315 is a general-purpose Silicon PIN diode manufactured by NXP USA Inc. This component is packaged in an ultra-small SOD523 (SC-79) plastic surface-mounted package with 2 leads. It is designed for various RF applications, offering low diode capacitance and low diode forward resistance, making it suitable for high-frequency operations.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| Continuous Reverse Voltage (VR) | - | - | - | 60 | V |
| Continuous Forward Current (IF) | - | - | - | 50 | mA |
| Total Power Dissipation (Ptot) | Tsp ≤ 90 °C | - | - | 715 | mW |
| Storage Temperature (Tstg) | - | -65 | - | 150 | °C |
| Junction Temperature (Tj) | - | -65 | - | 150 | °C |
| Forward Voltage (VF) | IF = 50 mA | - | 0.95 | 1.1 | V |
| Reverse Current (IR) | VR = 50 V | - | - | 100 | nA |
| Diode Capacitance (Cd) at 1 MHz | VR = 5 V | - | 0.2 | 0.35 | pF |
| Diode Forward Resistance (rD) at 10 mA | - | - | 1.5 | 2.5 | Ω |
Key Features
- Low diode capacitance, which is beneficial for high-frequency applications.
- Low diode forward resistance, ensuring minimal loss during operation.
- AEC-Q101 qualified, making it suitable for automotive applications.
- Ultra-small SOD523 (SC-79) package, ideal for space-constrained designs.
Applications
The BAP51-02,315 is primarily used in general RF applications, including but not limited to:
- RF switching and attenuator circuits.
- High-frequency signal processing.
- Automotive RF systems due to its AEC-Q101 qualification.
Q & A
- What is the maximum continuous reverse voltage for the BAP51-02,315?
The maximum continuous reverse voltage is 60 V.
- What is the maximum continuous forward current for the BAP51-02,315?
The maximum continuous forward current is 50 mA.
- What is the total power dissipation limit for the BAP51-02,315?
The total power dissipation limit is 715 mW at a solder point temperature (Tsp) of 90 °C or less.
- What are the storage and junction temperature ranges for the BAP51-02,315?
The storage temperature range is -65 °C to +150 °C, and the junction temperature range is also -65 °C to +150 °C.
- What is the typical forward voltage drop for the BAP51-02,315 at 50 mA forward current?
The typical forward voltage drop is 0.95 V to 1.1 V.
- What is the diode capacitance at 1 MHz and 5 V reverse voltage?
The diode capacitance is typically 0.2 pF to 0.35 pF.
- Is the BAP51-02,315 AEC-Q101 qualified?
- What package type is the BAP51-02,315 available in?
The BAP51-02,315 is available in an ultra-small SOD523 (SC-79) plastic surface-mounted package.
- What are the typical applications for the BAP51-02,315?
The BAP51-02,315 is used in general RF applications, including RF switching, attenuator circuits, and high-frequency signal processing.
- What is the thermal resistance from junction to solder point for the BAP51-02,315?
The thermal resistance from junction to solder point is typically 85 K/W.
