Overview
The BAP51-02,115 is a general-purpose silicon PIN diode manufactured by NXP USA Inc. This component is packaged in an ultra-small SOD523 surface-mounted device (SMD) plastic package, making it ideal for various radio frequency (RF) applications. The diode is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Continuous Reverse Voltage (VR) | - | - | - | 60 | V |
| Continuous Forward Current (IF) | - | - | - | 50 | mA |
| Total Power Dissipation (Ptot) | Tsp ≤ 90 °C | - | - | 715 | mW |
| Storage Temperature (Tstg) | - | -65 | - | 150 | °C |
| Junction Temperature (Tj) | - | -65 | - | 150 | °C |
| Forward Voltage (VF) | IF = 50 mA | - | 0.95 | 1.1 | V |
| Reverse Current (IR) | VR = 50 V | - | - | 100 | nA |
| Diode Capacitance (Cd) | VR = 5 V, f = 1 MHz | - | 0.2 | 0.35 | pF |
| Diode Forward Resistance (rD) | IF = 10 mA, f = 100 MHz | - | 1.5 | 2.5 | Ω |
| Thermal Resistance (Rth(j-sp)) | - | - | 85 | - | K/W |
Key Features
- Low diode capacitance, typically 0.2 to 0.35 pF at 5 V and 1 MHz.
- Low diode forward resistance, typically 1.5 to 2.5 Ω at 10 mA and 100 MHz.
- AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.
- Ultra-small SOD523 SMD plastic package, suitable for compact RF designs.
- High peak reverse voltage of up to 60 V.
- Maximum total power dissipation of 715 mW at Tsp ≤ 90 °C.
Applications
The BAP51-02,115 is designed for general RF applications, including but not limited to:
- RF switching and attenuator circuits.
- RF amplifiers and filters.
- Antenna tuning and matching networks.
- Automotive and industrial RF systems due to its AEC-Q101 qualification.
Q & A
- What is the package type of the BAP51-02,115? The BAP51-02,115 is packaged in an ultra-small SOD523 surface-mounted device (SMD) plastic package.
- What is the maximum continuous forward current of the BAP51-02,115? The maximum continuous forward current is 50 mA.
- What is the typical diode capacitance of the BAP51-02,115? The typical diode capacitance is 0.2 to 0.35 pF at 5 V and 1 MHz.
- Is the BAP51-02,115 AEC-Q101 qualified? Yes, the BAP51-02,115 is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.
- What is the maximum peak reverse voltage of the BAP51-02,115? The maximum peak reverse voltage is 60 V.
- What is the maximum total power dissipation of the BAP51-02,115? The maximum total power dissipation is 715 mW at Tsp ≤ 90 °C.
- What are the typical applications of the BAP51-02,115? The BAP51-02,115 is used in general RF applications, including RF switching, attenuator circuits, RF amplifiers, filters, and antenna tuning networks.
- What is the storage temperature range of the BAP51-02,115? The storage temperature range is -65 °C to +150 °C.
- What is the thermal resistance from junction to solder point of the BAP51-02,115? The thermal resistance from junction to solder point is typically 85 K/W.
- Is the BAP51-02,115 RoHS compliant? Yes, the BAP51-02,115 is RoHS compliant and lead-free).
