MMBD352WT1G
  • Share:

onsemi MMBD352WT1G

Manufacturer No:
MMBD352WT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF DIODE SCHOTTKY 7V 200MW SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBD352WT1G is a dual Schottky barrier diode produced by onsemi. This component is designed for small signal switching applications and is packaged in a compact SC70 (SOT-323) surface-mount device (SMD) package. The diode is known for its low forward voltage drop and high switching speed, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
Diode TypeSchottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max)7V
Capacitance @ Vr, F1pF @ 0V, 1MHz
Package TypeSC70 (SOT-323), SMD
Power Dissipation225mW

Key Features

  • Low forward voltage drop, reducing power losses in switching applications.
  • High switching speed, suitable for high-frequency circuits.
  • Compact SC70 (SOT-323) package, ideal for space-constrained designs.
  • Lead-free and RoHS compliant, aligning with environmental regulations.

Applications

The MMBD352WT1G is commonly used in various electronic circuits requiring fast switching and low voltage drop, such as:

  • Small signal switching and rectification.
  • High-frequency circuits.
  • Voltage clamping and protection circuits.
  • Audio and video signal processing.

Q & A

  1. What is the peak reverse voltage of the MMBD352WT1G?
    The peak reverse voltage is 7V.
  2. What is the package type of the MMBD352WT1G?
    The package type is SC70 (SOT-323), SMD.
  3. What is the maximum power dissipation of the MMBD352WT1G?
    The maximum power dissipation is 225mW.
  4. Is the MMBD352WT1G lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  5. What are the typical applications of the MMBD352WT1G?
    Typical applications include small signal switching, high-frequency circuits, voltage clamping, and audio/video signal processing.
  6. What is the capacitance of the MMBD352WT1G at 0V and 1MHz?
    The capacitance is 1pF at 0V and 1MHz.
  7. Why is the MMBD352WT1G preferred in high-frequency circuits?
    It is preferred due to its high switching speed and low forward voltage drop.
  8. Can the MMBD352WT1G be used in audio and video signal processing?
    Yes, it can be used in audio and video signal processing due to its fast switching characteristics.
  9. What is the diode type of the MMBD352WT1G?
    The diode type is Schottky - 1 Pair Series Connection.
  10. Where can I find detailed specifications and datasheets for the MMBD352WT1G?
    Detailed specifications and datasheets can be found on the official onsemi website, as well as on distributor websites like Digi-Key, Mouser, and TME.

Product Attributes

Diode Type:Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max):7V
Current - Max:- 
Capacitance @ Vr, F:1pF @ 0V, 1MHz
Resistance @ If, F:- 
Power Dissipation (Max):200 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
0 Remaining View Similar

In Stock

$0.37
1,025

Please send RFQ , we will respond immediately.

Same Series
NSVMMBD352WT1G
NSVMMBD352WT1G
DIODE ARRAY SCHOTTKY 7V SOT323

Similar Products

Part Number MMBD352WT1G MMBD352LT1G MMBD352WT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Type Schottky - 1 Pair Series Connection Schottky - 1 Pair Series Connection Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max) 7V 7V 7V
Current - Max - - -
Capacitance @ Vr, F 1pF @ 0V, 1MHz 1pF @ 0V, 1MHz 1pF @ 0V, 1MHz
Resistance @ If, F - - -
Power Dissipation (Max) 200 mW 225 mW 200 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-70-3 (SOT323)

Related Product By Categories

PMBD353,215
PMBD353,215
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
BAP51-05W
BAP51-05W
NXP USA Inc.
PIN DIODE, 50V V(BR), SILICON
BLC6G27LS-100,118
BLC6G27LS-100,118
NXP Semiconductors
BLC6G27LS-100 - RF POWER DISCRET
SKY16602-632LF
SKY16602-632LF
Skyworks Solutions Inc.
RF DIODE PIN 20V 12W 2MLP
BAP50-03-TP
BAP50-03-TP
Micro Commercial Co
RF DIODE PIN 50V 200MW SOD323
BAP50-03,135
BAP50-03,135
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BAP50-05W,115
BAP50-05W,115
NXP USA Inc.
PIN DIODE, 50V
BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BAP64LX,315
BAP64LX,315
NXP USA Inc.
RF DIODE PIN 60V 150MW SOD2
1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
MMBV3401LT1G
MMBV3401LT1G
onsemi
RF DIODE PIN 35V 200MW SOT23-3
1N5711WS-13
1N5711WS-13
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3