MMBD352WT1G
  • Share:

onsemi MMBD352WT1G

Manufacturer No:
MMBD352WT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
RF DIODE SCHOTTKY 7V 200MW SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBD352WT1G is a dual Schottky barrier diode produced by onsemi. This component is designed for small signal switching applications and is packaged in a compact SC70 (SOT-323) surface-mount device (SMD) package. The diode is known for its low forward voltage drop and high switching speed, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
Diode TypeSchottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max)7V
Capacitance @ Vr, F1pF @ 0V, 1MHz
Package TypeSC70 (SOT-323), SMD
Power Dissipation225mW

Key Features

  • Low forward voltage drop, reducing power losses in switching applications.
  • High switching speed, suitable for high-frequency circuits.
  • Compact SC70 (SOT-323) package, ideal for space-constrained designs.
  • Lead-free and RoHS compliant, aligning with environmental regulations.

Applications

The MMBD352WT1G is commonly used in various electronic circuits requiring fast switching and low voltage drop, such as:

  • Small signal switching and rectification.
  • High-frequency circuits.
  • Voltage clamping and protection circuits.
  • Audio and video signal processing.

Q & A

  1. What is the peak reverse voltage of the MMBD352WT1G?
    The peak reverse voltage is 7V.
  2. What is the package type of the MMBD352WT1G?
    The package type is SC70 (SOT-323), SMD.
  3. What is the maximum power dissipation of the MMBD352WT1G?
    The maximum power dissipation is 225mW.
  4. Is the MMBD352WT1G lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  5. What are the typical applications of the MMBD352WT1G?
    Typical applications include small signal switching, high-frequency circuits, voltage clamping, and audio/video signal processing.
  6. What is the capacitance of the MMBD352WT1G at 0V and 1MHz?
    The capacitance is 1pF at 0V and 1MHz.
  7. Why is the MMBD352WT1G preferred in high-frequency circuits?
    It is preferred due to its high switching speed and low forward voltage drop.
  8. Can the MMBD352WT1G be used in audio and video signal processing?
    Yes, it can be used in audio and video signal processing due to its fast switching characteristics.
  9. What is the diode type of the MMBD352WT1G?
    The diode type is Schottky - 1 Pair Series Connection.
  10. Where can I find detailed specifications and datasheets for the MMBD352WT1G?
    Detailed specifications and datasheets can be found on the official onsemi website, as well as on distributor websites like Digi-Key, Mouser, and TME.

Product Attributes

Diode Type:Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max):7V
Current - Max:- 
Capacitance @ Vr, F:1pF @ 0V, 1MHz
Resistance @ If, F:- 
Power Dissipation (Max):200 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
0 Remaining View Similar

In Stock

$0.37
1,025

Please send RFQ , we will respond immediately.

Same Series
NSVMMBD352WT1G
NSVMMBD352WT1G
DIODE ARRAY SCHOTTKY 7V SOT323

Similar Products

Part Number MMBD352WT1G MMBD352LT1G MMBD352WT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Diode Type Schottky - 1 Pair Series Connection Schottky - 1 Pair Series Connection Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max) 7V 7V 7V
Current - Max - - -
Capacitance @ Vr, F 1pF @ 0V, 1MHz 1pF @ 0V, 1MHz 1pF @ 0V, 1MHz
Resistance @ If, F - - -
Power Dissipation (Max) 200 mW 225 mW 200 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-70-3 (SOT323)

Related Product By Categories

BAP65-03,115
BAP65-03,115
NXP USA Inc.
RF DIODE PIN 30V 500MW SOD323
MMBD301LT1G
MMBD301LT1G
onsemi
DIODE SCHOTTKY 30V 200MW SOT23-3
PMBD353,215
PMBD353,215
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
MMDL301T1G
MMDL301T1G
onsemi
DIODE SCHOTTKY 30V 200MW SOD323
MBD330DWT1G
MBD330DWT1G
onsemi
RF DIODE SCHOTTKY 30V 120MW SC88
BAP65-02,115
BAP65-02,115
NXP USA Inc.
RF DIODE PIN 30V 715MW SOD523
BAP70Q,125
BAP70Q,125
NXP USA Inc.
RF DIODE PIN 50V 125MW 5TSOP
BAP50-03-TP
BAP50-03-TP
Micro Commercial Co
RF DIODE PIN 50V 200MW SOD323
BAP50-03,135
BAP50-03,135
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BAP64-05W,115
BAP64-05W,115
NXP USA Inc.
RF DIODE PIN 100V 240MW SOT323
MMBV3401LT1G
MMBV3401LT1G
onsemi
RF DIODE PIN 35V 200MW SOT23-3
BAP64LX/Z,315
BAP64LX/Z,315
NXP USA Inc.
DIODE PIN 60V 150MW DFN1006D-2

Related Product By Brand

MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
STK672-410C-E
STK672-410C-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD