BAP70Q,125
  • Share:

NXP USA Inc. BAP70Q,125

Manufacturer No:
BAP70Q,125
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 50V 125MW 5TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP70Q,125 is a quad PIN diode attenuator produced by NXP USA Inc. This component is designed to provide high linearity and low insertion loss, making it suitable for various broadband system applications. It is packaged in a SC-74A (SOT753) plastic surface-mounted package with 5 leads, offering a compact solution for RF circuit designs.

Key Specifications

ParameterConditionsMinMaxUnit
Reverse Voltage (VR)--50V
Forward Current (IF)--100mA
Total Power Dissipation (Ptot)Tsp ≤ 90 °C-125mW
Storage Temperature (Tstg)--65150°C
Junction Temperature (Tj)--65150°C
Thermal Resistance (Rth(j-sp))--350K/W
Frequency Range-300 kHz4 GHz-

Key Features

  • 4 PIN diodes in a single SOT753 package
  • High linearity
  • Low insertion loss
  • Low diode capacitance
  • Low diode forward resistance
  • AEC-Q101 qualified
  • Compact SC-74A (SOT753) package with 5 leads

Applications

The BAP70Q,125 is ideal for broadband system applications such as WCDMA, CATV, and general-purpose voltage-controlled attenuators requiring high linearity.

Q & A

  1. What is the BAP70Q,125? The BAP70Q,125 is a quad PIN diode attenuator produced by NXP USA Inc.
  2. What package type does the BAP70Q,125 use? It is packaged in a SC-74A (SOT753) plastic surface-mounted package with 5 leads.
  3. What is the frequency range of the BAP70Q,125? The frequency range is from 300 kHz to 4 GHz.
  4. What are the key features of the BAP70Q,125? Key features include high linearity, low insertion loss, low diode capacitance, and low diode forward resistance.
  5. Is the BAP70Q,125 AEC-Q101 qualified? Yes, the BAP70Q,125 is AEC-Q101 qualified.
  6. What are the typical applications of the BAP70Q,125? Typical applications include broadband system applications such as WCDMA, CATV, and general-purpose voltage-controlled attenuators.
  7. What is the maximum reverse voltage for the BAP70Q,125? The maximum reverse voltage is 50 V.
  8. What is the maximum forward current for the BAP70Q,125? The maximum forward current is 100 mA.
  9. What is the total power dissipation limit for the BAP70Q,125? The total power dissipation limit is 125 mW at Tsp ≤ 90 °C.
  10. What is the storage temperature range for the BAP70Q,125? The storage temperature range is from -65 °C to 150 °C.

Product Attributes

Diode Type:PIN - 2 Pair CA + CC
Voltage - Peak Reverse (Max):50V
Current - Max:100 mA
Capacitance @ Vr, F:0.3pF @ 20V, 1MHz
Resistance @ If, F:1.9Ohm @ 100mA, 100MHz
Power Dissipation (Max):125 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:SC-74A, SOT-753
Supplier Device Package:5-TSOP
0 Remaining View Similar

In Stock

$0.86
123

Please send RFQ , we will respond immediately.

Related Product By Categories

CLA4603-085LF
CLA4603-085LF
Skyworks Solutions Inc.
RF DIODE PIN 45V 2W 3QFN
1N5711
1N5711
STMicroelectronics
RF DIODE SCHOTTKY 70V 430MW DO35
BAT17,215
BAT17,215
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
MMBD301LT1G
MMBD301LT1G
onsemi
DIODE SCHOTTKY 30V 200MW SOT23-3
BAP55LX,315
BAP55LX,315
NXP USA Inc.
RF DIODE PIN 50V 135MW 2DFN
BAP65-02,135
BAP65-02,135
NXP USA Inc.
RF DIODE PIN 30V 715MW SOD523
BAP50-05W,115
BAP50-05W,115
NXP USA Inc.
PIN DIODE, 50V
BAP51-05W,115
BAP51-05W,115
NXP USA Inc.
RF DIODE PIN 50V 240MW SOT323-3
BAP70-03,115
BAP70-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
MMBD301LT1
MMBD301LT1
onsemi
DIODE SCHOTTKY 200MW 30V SOT23
1N5711#T50
1N5711#T50
Broadcom Limited
RF DIODE SCHOTTKY 70V 250MW

Related Product By Brand

BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
MIMXRT1051CVJ5B
MIMXRT1051CVJ5B
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
MK24FN1M0VLL12
MK24FN1M0VLL12
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 100LQFP
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
MCIMX6Q5EYM10ADR
MCIMX6Q5EYM10ADR
NXP USA Inc.
IC MPU I.MX6Q 1.0GHZ 624FCBGA
TJA1055T/2Z
TJA1055T/2Z
NXP USA Inc.
IC TRANSCEIVER 1/1 14SO
TJA1041T/V,518
TJA1041T/V,518
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 14SO
SC16C652BIB48,128
SC16C652BIB48,128
NXP USA Inc.
IC ENCODER/DECODER IRDA 48LQFP
SC16C754BIA68,518
SC16C754BIA68,518
NXP USA Inc.
IC UART QUAD W/FIFO 68-PLCC
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN