BAP70-03,115
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NXP USA Inc. BAP70-03,115

Manufacturer No:
BAP70-03,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 50V 500MW SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP70-03,115 is a silicon PIN diode produced by NXP USA Inc. This component is designed in a SOD323 (SC-76) small SMD plastic package, making it suitable for various RF applications. The diode is known for its high voltage current controlled RF resistor characteristics, low diode capacitance, and very low series inductance, which are crucial for high-frequency operations.

Key Specifications

ParameterConditionsMinMaxUnit
Reverse Voltage (VR)Continuous voltage-50V
Forward Current (IF)Continuous current-100mA
Total Power Dissipation (Ptot)Tsp = 90°C-500mW
Storage Temperature (Tstg)--65150°C
Junction Temperature (Tj)--65150°C
Thermal Resistance (Rth(j-sp))--120K/W
Series Inductance (LS)IF = 100 mA; f = 100 MHz-1.5nH

Key Features

  • High voltage current controlled RF resistor for attenuators
  • Low diode capacitance
  • Very low series inductance
  • SOD323 (SC-76) small SMD plastic package; 2 leads; 1.3 mm pitch; 1.7 mm x 1.25 mm x 0.95 mm body

Applications

  • RF attenuators
  • SAT (Satellite) TV
  • Car radio

Q & A

  1. What is the BAP70-03,115 used for? The BAP70-03,115 is used in RF applications such as RF attenuators, SAT TV, and car radio.
  2. What is the package type of the BAP70-03,115? The BAP70-03,115 is packaged in a SOD323 (SC-76) small SMD plastic package.
  3. What are the key features of the BAP70-03,115? Key features include high voltage current controlled RF resistor characteristics, low diode capacitance, and very low series inductance.
  4. What is the maximum reverse voltage for the BAP70-03,115? The maximum reverse voltage is 50 V.
  5. What is the maximum forward current for the BAP70-03,115? The maximum forward current is 100 mA.
  6. What is the total power dissipation limit for the BAP70-03,115 at 90°C? The total power dissipation limit is 500 mW.
  7. What is the storage temperature range for the BAP70-03,115? The storage temperature range is from -65°C to 150°C.
  8. What is the thermal resistance from junction to solder point for the BAP70-03,115? The thermal resistance is 120 K/W.
  9. What is the series inductance of the BAP70-03,115 at 100 MHz? The series inductance is approximately 1.5 nH.
  10. Where can I find detailed specifications for the BAP70-03,115? Detailed specifications can be found in the official datasheet available on NXP Semiconductors' website or through distributors like Digi-Key and Octopart.

Product Attributes

Diode Type:PIN - Single
Voltage - Peak Reverse (Max):50V
Current - Max:100 mA
Capacitance @ Vr, F:0.25pF @ 20V, 1MHz
Resistance @ If, F:1.9Ohm @ 100mA, 100MHz
Power Dissipation (Max):500 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
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Similar Products

Part Number BAP70-03,115 BAP50-03,115 BAP70-02,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Active
Diode Type PIN - Single PIN - Single PIN - Single
Voltage - Peak Reverse (Max) 50V 50V 50V
Current - Max 100 mA 50 mA 100 mA
Capacitance @ Vr, F 0.25pF @ 20V, 1MHz 0.35pF @ 5V, 1MHz 0.25pF @ 20V, 1MHz
Resistance @ If, F 1.9Ohm @ 100mA, 100MHz 5Ohm @ 10mA, 100MHz 1.9Ohm @ 100mA, 100MHz
Power Dissipation (Max) 500 mW 500 mW 415 mW
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-79, SOD-523
Supplier Device Package SOD-323 SOD-323 SOD-523

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