Overview
The onsemi MMBD452LT1G is a dual Schottky diode designed for high-efficiency applications, particularly in UHF and VHF detector circuits. It is packaged in a 3-pin SOT-23 package, making it suitable for low-cost, high-volume consumer and industrial/commercial requirements. This diode is known for its low forward voltage drop and high switching speed, which are critical for efficient operation in various electronic systems.
Key Specifications
Parameter | Value |
---|---|
Repetitive Reverse Voltage (Vrrm) | 30 V |
Forward Voltage (Vf) | 600 mV @ 1 mA |
Reverse Current (Ir) | 200 nA |
Operating Junction Temperature Range (TJ) | -55°C to +125°C |
Storage Temperature Range (Tstg) | -55°C to +150°C |
Package Type | 3-Pin SOT-23 |
Power Dissipation | 225 mW |
Key Features
- Low forward voltage drop of 600 mV at 1 mA, ensuring high efficiency in applications.
- High switching speed, making it suitable for high-frequency applications such as UHF and VHF detectors.
- Compact 3-pin SOT-23 package, ideal for space-constrained designs.
- Wide operating temperature range from -55°C to +125°C, enhancing reliability in various environments.
- Low reverse current of 200 nA, reducing power consumption.
Applications
The onsemi MMBD452LT1G is primarily designed for high-efficiency UHF and VHF detector applications. It is also suitable for other high-frequency circuits, such as RF mixers, detectors, and switching circuits. Additionally, its low power consumption and compact package make it a good choice for consumer and industrial/commercial electronics where space and efficiency are critical.
Q & A
- What is the repetitive reverse voltage of the MMBD452LT1G?
The repetitive reverse voltage (Vrrm) is 30 V. - What is the forward voltage drop of the MMBD452LT1G at 1 mA?
The forward voltage drop (Vf) is 600 mV at 1 mA. - What is the package type of the MMBD452LT1G?
The package type is 3-pin SOT-23. - What is the operating junction temperature range of the MMBD452LT1G?
The operating junction temperature range (TJ) is -55°C to +125°C. - What are the primary applications of the MMBD452LT1G?
The primary applications include high-efficiency UHF and VHF detector circuits, RF mixers, and other high-frequency switching circuits. - What is the reverse current of the MMBD452LT1G?
The reverse current (Ir) is 200 nA. - Is the MMBD452LT1G suitable for high-volume production?
Yes, it is designed for low-cost, high-volume consumer and industrial/commercial requirements. - What is the storage temperature range of the MMBD452LT1G?
The storage temperature range (Tstg) is -55°C to +150°C. - What is the power dissipation of the MMBD452LT1G?
The power dissipation is 225 mW. - Is the MMBD452LT1G RoHS compliant?
Yes, the MMBD452LT1G is RoHS compliant.