Overview
The BAP64-02,115 from NXP USA Inc. is a silicon PIN diode designed for various RF applications. This diode is packaged in a SOD523 plastic, surface-mounted package, which is compact with dimensions of 1.2 mm x 0.8 mm x 0.6 mm. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VR (Reverse Voltage) | - | - | 175 | V | |
| IF (Forward Current) | - | - | 100 | mA | |
| Ptot (Total Power Dissipation) | Tsp = 90 °C | - | - | 715 | mW |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| Tj (Junction Temperature) | - | -65 | - | 150 | °C |
| VF (Forward Voltage) | IF = 50 mA | - | 0.95 | 1.1 | V |
| IR (Reverse Current) | VR = 60 V | - | - | 10 | μA |
| Cd (Diode Capacitance) | VR = 20 V, f = 1 MHz | - | 0.23 | 0.35 | pF |
| rD (Diode Forward Resistance) | IF = 100 mA | 0.7 | - | 1.35 | Ω |
Key Features
- Silicon PIN diode suitable for RF switching and attenuator applications.
- Compact SOD523 package with dimensions of 1.2 mm x 0.8 mm x 0.6 mm.
- AEC-Q101 qualified, ensuring reliability in automotive and other harsh environments.
- Low forward voltage (VF) of 0.95 V to 1.1 V at IF = 50 mA.
- Low reverse current (IR) of less than 10 μA at VR = 60 V.
- Low diode capacitance (Cd) of 0.23 pF to 0.35 pF at VR = 20 V and f = 1 MHz.
- Low diode forward resistance (rD) of 0.7 Ω to 1.35 Ω at IF = 100 mA.
Applications
- RF switching applications.
- Attenuator circuits.
- Automotive electronics due to AEC-Q101 qualification.
- General-purpose RF and microwave applications requiring low capacitance and resistance.
Q & A
- What is the maximum reverse voltage of the BAP64-02,115?
The maximum reverse voltage (VR) is 175 V.
- What is the maximum forward current of the BAP64-02,115?
The maximum forward current (IF) is 100 mA.
- What is the package type of the BAP64-02,115?
The package type is SOD523, a surface-mounted package.
- Is the BAP64-02,115 AEC-Q101 qualified?
- What are the typical dimensions of the SOD523 package?
The dimensions are 1.2 mm x 0.8 mm x 0.6 mm.
- What is the typical forward voltage of the BAP64-02,115 at 50 mA forward current?
The typical forward voltage (VF) is 0.95 V to 1.1 V at IF = 50 mA.
- What is the reverse current of the BAP64-02,115 at 60 V reverse voltage?
The reverse current (IR) is less than 10 μA at VR = 60 V.
- What is the diode capacitance of the BAP64-02,115 at 20 V reverse voltage and 1 MHz frequency?
The diode capacitance (Cd) is 0.23 pF to 0.35 pF at VR = 20 V and f = 1 MHz.
- What are the typical storage and junction temperatures for the BAP64-02,115?
The storage temperature (Tstg) and junction temperature (Tj) range from -65 °C to 150 °C.
- What are some common applications of the BAP64-02,115?
