MMBD354LT1G
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onsemi MMBD354LT1G

Manufacturer No:
MMBD354LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 7V 225MW SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBD354LT1G is a dual hot carrier mixer diode produced by onsemi, designed primarily for UHF mixer applications. It is also suitable for use in detector and ultra-fast switching circuits. This component is part of a series that includes other variants such as MMBD352LT1G, MMBD353LT1G, and MMBD355LT1G. The MMBD354LT1G is known for its low capacitance and forward voltage, making it an ideal choice for various high-frequency applications.

Key Specifications

Rating Symbol Value Unit
Continuous Reverse Voltage VR 7.0 V
Forward Voltage (IF = 10 mA) VF 0.60 V
Reverse Leakage Current (VR = 3.0 V / 7.0 V) IR 0.25 / 10 μA
Capacitance (VR = 0 V, f = 1.0 MHz) C 1.0 pF
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 225 mW
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RθJA 556 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C

Key Features

  • Very Low Capacitance − Less Than 1.0 pF @ Zero V
  • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
  • AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

Applications

The MMBD354LT1G is primarily designed for UHF mixer applications but is also suitable for use in:

  • Detector circuits
  • Ultra-fast switching circuits

Q & A

  1. What is the primary application of the MMBD354LT1G?

    The MMBD354LT1G is primarily designed for UHF mixer applications.

  2. What is the maximum continuous reverse voltage for the MMBD354LT1G?

    The maximum continuous reverse voltage is 7.0 V.

  3. What is the typical forward voltage of the MMBD354LT1G at 10 mA?

    The typical forward voltage is 0.5 V at 10 mA.

  4. What is the capacitance of the MMBD354LT1G at zero volts and 1 MHz frequency?

    The capacitance is less than 1.0 pF at zero volts and 1 MHz frequency.

  5. Is the MMBD354LT1G RoHS compliant?
  6. What are the junction and storage temperature ranges for the MMBD354LT1G?

    The junction and storage temperature ranges are -55°C to +150°C.

  7. What is the thermal resistance, junction-to-ambient, for the MMBD354LT1G on an FR-5 board?

    The thermal resistance, junction-to-ambient, is 556 °C/W on an FR-5 board.

  8. What is the total device dissipation for the MMBD354LT1G on an FR-5 board at 25°C?

    The total device dissipation is 225 mW on an FR-5 board at 25°C.

  9. Is the MMBD354LT1G AEC-Q101 qualified?
  10. What package type and shipping quantity are available for the MMBD354LT1G?

    The MMBD354LT1G is available in SOT-23 (TO-236) Pb-Free packages, shipped in 3,000 units per tape and reel.

Product Attributes

Diode Type:Schottky - 1 Pair Common Cathode
Voltage - Peak Reverse (Max):7V
Current - Max:- 
Capacitance @ Vr, F:1pF @ 0V, 1MHz
Resistance @ If, F:- 
Power Dissipation (Max):225 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number MMBD354LT1G MMBD355LT1G MMBD352LT1G MMBD353LT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Diode Type Schottky - 1 Pair Common Cathode Schottky - 1 Pair Common Anode Schottky - 1 Pair Series Connection Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max) 7V 7V 7V 7V
Current - Max - - - -
Capacitance @ Vr, F 1pF @ 0V, 1MHz 1pF @ 0V, 1MHz 1pF @ 0V, 1MHz 1pF @ 0V, 1MHz
Resistance @ If, F - - - -
Power Dissipation (Max) 225 mW 225 mW 225 mW 225 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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