BAS216,115
  • Share:

NXP USA Inc. BAS216,115

Manufacturer No:
BAS216,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS216,115 is a fast recovery rectifier diode produced by NXP USA Inc. This component is designed for high-speed switching applications, offering fast recovery times and low forward voltage drop. It is suitable for use in a variety of electronic circuits where efficient rectification and minimal switching losses are critical.

Key Specifications

ParameterValue
Voltage - Forward (Vf) (Max) @ If1.25V @ 150mA
SpeedFast Recovery <= 500ns, > 200mA (Io)
Reverse Recovery Time (trr)4ns
Moisture Sensitivity Level (MSL)1 (Unlimited)
MOUNTING TYPESurface Mount

Key Features

  • Fast recovery time of less than 500ns, making it suitable for high-speed switching applications.
  • Low forward voltage drop of 1.25V at 150mA, reducing power losses.
  • Surface mount package for easy integration into modern PCB designs.
  • High current handling capability with Io greater than 200mA.

Applications

The BAS216,115 is ideal for various applications requiring efficient and fast rectification, such as:

  • Switch-mode power supplies.
  • DC-DC converters.
  • High-frequency inverters.
  • General-purpose rectification in high-speed circuits.

Q & A

  1. What is the forward voltage drop of the BAS216,115 at 150mA?
    The forward voltage drop is 1.25V at 150mA.
  2. What is the reverse recovery time of the BAS216,115?
    The reverse recovery time (trr) is 4ns.
  3. What is the mounting type of the BAS216,115?
    The mounting type is surface mount.
  4. What is the moisture sensitivity level (MSL) of the BAS216,115?
    The MSL is 1 (unlimited).
  5. What are the typical applications of the BAS216,115?
    Typical applications include switch-mode power supplies, DC-DC converters, high-frequency inverters, and general-purpose rectification in high-speed circuits.
  6. What is the speed of the BAS216,115?
    The BAS216,115 has a fast recovery time of less than 500ns and can handle currents greater than 200mA.
  7. Where can I find detailed specifications and datasheets for the BAS216,115?
    Detailed specifications and datasheets can be found on the official NXP website or through distributors like Digi-Key, Heisener, and Octopart.
  8. Is the BAS216,115 suitable for high-frequency applications?
    Yes, the BAS216,115 is suitable for high-frequency applications due to its fast recovery time and low switching losses.
  9. What is the current handling capability of the BAS216,115?
    The BAS216,115 can handle currents greater than 200mA.
  10. Can the BAS216,115 be used in general-purpose rectification?
    Yes, the BAS216,115 can be used for general-purpose rectification in high-speed circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-110
Supplier Device Package:SOD-110
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
341

Please send RFQ , we will respond immediately.

Same Series
BAS216,115
BAS216,115
DIODE GEN PURP 75V 250MA SOD2

Similar Products

Part Number BAS216,115 BAS316,115 BAS21W,115 BAS21H,115 BAS21J,115 BAS216,135
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 100 V 250 V 200 V 300 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 225mA (DC) 200mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.1 V @ 100 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 50 ns 50 ns 50 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 500 nA @ 80 V 100 nA @ 200 V 100 nA @ 200 V 150 nA @ 250 V 1 µA @ 75 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-110 SC-76, SOD-323 SC-70, SOT-323 SOD-123F SC-90, SOD-323F SOD-110
Supplier Device Package SOD-110 SOD-323 SOT-323 SOD-123F SOD-323F SOD-110
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
BAT54-7-F-31
BAT54-7-F-31
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3

Related Product By Brand

BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
PCF85063TP/1Z
PCF85063TP/1Z
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 8-SON
ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
SAF4000EL/101S500Y
SAF4000EL/101S500Y
NXP USA Inc.
SOFTWARE DEFINED RADIO
SPC5604BF2VLL4
SPC5604BF2VLL4
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 100LQFP
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX