BAS216,115
  • Share:

NXP USA Inc. BAS216,115

Manufacturer No:
BAS216,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS216,115 is a fast recovery rectifier diode produced by NXP USA Inc. This component is designed for high-speed switching applications, offering fast recovery times and low forward voltage drop. It is suitable for use in a variety of electronic circuits where efficient rectification and minimal switching losses are critical.

Key Specifications

ParameterValue
Voltage - Forward (Vf) (Max) @ If1.25V @ 150mA
SpeedFast Recovery <= 500ns, > 200mA (Io)
Reverse Recovery Time (trr)4ns
Moisture Sensitivity Level (MSL)1 (Unlimited)
MOUNTING TYPESurface Mount

Key Features

  • Fast recovery time of less than 500ns, making it suitable for high-speed switching applications.
  • Low forward voltage drop of 1.25V at 150mA, reducing power losses.
  • Surface mount package for easy integration into modern PCB designs.
  • High current handling capability with Io greater than 200mA.

Applications

The BAS216,115 is ideal for various applications requiring efficient and fast rectification, such as:

  • Switch-mode power supplies.
  • DC-DC converters.
  • High-frequency inverters.
  • General-purpose rectification in high-speed circuits.

Q & A

  1. What is the forward voltage drop of the BAS216,115 at 150mA?
    The forward voltage drop is 1.25V at 150mA.
  2. What is the reverse recovery time of the BAS216,115?
    The reverse recovery time (trr) is 4ns.
  3. What is the mounting type of the BAS216,115?
    The mounting type is surface mount.
  4. What is the moisture sensitivity level (MSL) of the BAS216,115?
    The MSL is 1 (unlimited).
  5. What are the typical applications of the BAS216,115?
    Typical applications include switch-mode power supplies, DC-DC converters, high-frequency inverters, and general-purpose rectification in high-speed circuits.
  6. What is the speed of the BAS216,115?
    The BAS216,115 has a fast recovery time of less than 500ns and can handle currents greater than 200mA.
  7. Where can I find detailed specifications and datasheets for the BAS216,115?
    Detailed specifications and datasheets can be found on the official NXP website or through distributors like Digi-Key, Heisener, and Octopart.
  8. Is the BAS216,115 suitable for high-frequency applications?
    Yes, the BAS216,115 is suitable for high-frequency applications due to its fast recovery time and low switching losses.
  9. What is the current handling capability of the BAS216,115?
    The BAS216,115 can handle currents greater than 200mA.
  10. Can the BAS216,115 be used in general-purpose rectification?
    Yes, the BAS216,115 can be used for general-purpose rectification in high-speed circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-110
Supplier Device Package:SOD-110
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
341

Please send RFQ , we will respond immediately.

Same Series
BAS216,135
BAS216,135
DIODE GEN PURP 75V 250MA SOD2

Similar Products

Part Number BAS216,115 BAS316,115 BAS21W,115 BAS21H,115 BAS21J,115 BAS216,135
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 100 V 250 V 200 V 300 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 225mA (DC) 200mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 200 mA 1.25 V @ 200 mA 1.1 V @ 100 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 50 ns 50 ns 50 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 500 nA @ 80 V 100 nA @ 200 V 100 nA @ 200 V 150 nA @ 250 V 1 µA @ 75 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 5pF @ 0V, 1MHz 2pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-110 SC-76, SOD-323 SC-70, SOT-323 SOD-123F SC-90, SOD-323F SOD-110
Supplier Device Package SOD-110 SOD-323 SOT-323 SOD-123F SOD-323F SOD-110
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
LPC2468FET208K
LPC2468FET208K
NXP USA Inc.
IC MCU 16/32BIT 512KB 208TFBGA
TJA1042T/3,118
TJA1042T/3,118
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
TJA1028T/3V3/10:11
TJA1028T/3V3/10:11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
TLVH431CDBZR,215
TLVH431CDBZR,215
NXP USA Inc.
IC VREF SHUNT ADJ 1.5% TO236AB
MMPF0200NPAZES
MMPF0200NPAZES
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56QFN
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN
MPX53DP
MPX53DP
NXP USA Inc.
SENSOR DIFF PRESS 7.25PSI MAX