BAS216,135
  • Share:

NXP USA Inc. BAS216,135

Manufacturer No:
BAS216,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS216,135 is a high-speed switching diode manufactured by NXP USA Inc. This diode is designed for general-purpose applications and is known for its fast recovery time and high reliability. It is packaged in a SOD-110 case, making it suitable for surface mount technology (SMT) assembly.

Key Specifications

Parameter Value Unit
Manufacturer NXP USA Inc.
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) (DC) 250 mA
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Speed Fast Recovery <= 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4ns
Current - Reverse Leakage @ Vr 1µA @ 75V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SOD-110
Operating Temperature - Junction 150°C (Max)

Key Features

  • High-speed switching capability with fast recovery time of <= 500ns.
  • Low forward voltage drop of 1.25V at 150mA.
  • Low reverse leakage current of 1µA at 75V.
  • Surface mount SOD-110 package for easy integration into SMT designs.
  • High junction operating temperature of up to 150°C.
  • Low capacitance of 1.5pF at 0V and 1MHz.

Applications

  • General-purpose switching and rectification in electronic circuits.
  • High-frequency applications requiring fast recovery times.
  • Automotive and industrial control systems where reliability and high temperature operation are critical.
  • Consumer electronics such as power supplies, audio equipment, and other devices requiring efficient diode performance.

Q & A

  1. What is the maximum DC reverse voltage of the BAS216,135 diode?

    The maximum DC reverse voltage is 75V.

  2. What is the average rectified current rating of the BAS216,135 diode?

    The average rectified current rating is 250mA.

  3. What is the forward voltage drop of the BAS216,135 diode at 150mA?

    The forward voltage drop is 1.25V at 150mA.

  4. What is the reverse recovery time of the BAS216,135 diode?

    The reverse recovery time is <= 500ns.

  5. What is the package type of the BAS216,135 diode?

    The package type is SOD-110.

  6. What is the maximum junction operating temperature of the BAS216,135 diode?

    The maximum junction operating temperature is 150°C.

  7. What is the typical capacitance of the BAS216,135 diode at 0V and 1MHz?

    The typical capacitance is 1.5pF at 0V and 1MHz.

  8. In what types of applications is the BAS216,135 diode commonly used?

    It is commonly used in general-purpose switching, high-frequency applications, automotive and industrial control systems, and consumer electronics.

  9. Is the BAS216,135 diode suitable for surface mount technology (SMT) assembly?

    Yes, it is suitable for SMT assembly due to its SOD-110 package.

  10. What is the reverse leakage current of the BAS216,135 diode at 75V?

    The reverse leakage current is 1µA at 75V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-110
Supplier Device Package:SOD-110
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
63

Please send RFQ , we will respond immediately.

Same Series
BAS216,115
BAS216,115
DIODE GEN PURP 75V 250MA SOD2

Similar Products

Part Number BAS216,135 BAS316,135 BAS216,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 100 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 500 nA @ 80 V 1 µA @ 75 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOD-110 SC-76, SOD-323 SOD-110
Supplier Device Package SOD-110 SOD-323 SOD-110
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
MKL04Z32VLF4
MKL04Z32VLF4
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
LPC1114FHN33/301:5
LPC1114FHN33/301:5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
SPC5777CDK3MMO3
SPC5777CDK3MMO3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 516MAPBGA
LS1028AXN7PQA
LS1028AXN7PQA
NXP USA Inc.
LS1028A-1500 XT NO SEC
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
74AHC1G126GW/C4125
74AHC1G126GW/C4125
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX