BAS216,135
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NXP USA Inc. BAS216,135

Manufacturer No:
BAS216,135
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 250MA SOD2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS216,135 is a high-speed switching diode manufactured by NXP USA Inc. This diode is designed for general-purpose applications and is known for its fast recovery time and high reliability. It is packaged in a SOD-110 case, making it suitable for surface mount technology (SMT) assembly.

Key Specifications

Parameter Value Unit
Manufacturer NXP USA Inc.
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) (DC) 250 mA
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Speed Fast Recovery <= 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4ns
Current - Reverse Leakage @ Vr 1µA @ 75V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SOD-110
Operating Temperature - Junction 150°C (Max)

Key Features

  • High-speed switching capability with fast recovery time of <= 500ns.
  • Low forward voltage drop of 1.25V at 150mA.
  • Low reverse leakage current of 1µA at 75V.
  • Surface mount SOD-110 package for easy integration into SMT designs.
  • High junction operating temperature of up to 150°C.
  • Low capacitance of 1.5pF at 0V and 1MHz.

Applications

  • General-purpose switching and rectification in electronic circuits.
  • High-frequency applications requiring fast recovery times.
  • Automotive and industrial control systems where reliability and high temperature operation are critical.
  • Consumer electronics such as power supplies, audio equipment, and other devices requiring efficient diode performance.

Q & A

  1. What is the maximum DC reverse voltage of the BAS216,135 diode?

    The maximum DC reverse voltage is 75V.

  2. What is the average rectified current rating of the BAS216,135 diode?

    The average rectified current rating is 250mA.

  3. What is the forward voltage drop of the BAS216,135 diode at 150mA?

    The forward voltage drop is 1.25V at 150mA.

  4. What is the reverse recovery time of the BAS216,135 diode?

    The reverse recovery time is <= 500ns.

  5. What is the package type of the BAS216,135 diode?

    The package type is SOD-110.

  6. What is the maximum junction operating temperature of the BAS216,135 diode?

    The maximum junction operating temperature is 150°C.

  7. What is the typical capacitance of the BAS216,135 diode at 0V and 1MHz?

    The typical capacitance is 1.5pF at 0V and 1MHz.

  8. In what types of applications is the BAS216,135 diode commonly used?

    It is commonly used in general-purpose switching, high-frequency applications, automotive and industrial control systems, and consumer electronics.

  9. Is the BAS216,135 diode suitable for surface mount technology (SMT) assembly?

    Yes, it is suitable for SMT assembly due to its SOD-110 package.

  10. What is the reverse leakage current of the BAS216,135 diode at 75V?

    The reverse leakage current is 1µA at 75V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-110
Supplier Device Package:SOD-110
Operating Temperature - Junction:150°C (Max)
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Same Series
BAS216,115
BAS216,115
DIODE GEN PURP 75V 250MA SOD2

Similar Products

Part Number BAS216,135 BAS316,135 BAS216,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 100 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 250mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 500 nA @ 80 V 1 µA @ 75 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOD-110 SC-76, SOD-323 SOD-110
Supplier Device Package SOD-110 SOD-323 SOD-110
Operating Temperature - Junction 150°C (Max) 150°C (Max) 150°C (Max)

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