MUR860J
  • Share:

WeEn Semiconductors MUR860J

Manufacturer No:
MUR860J
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
ULTRAFAST POWER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR860J, produced by WeEn Semiconductors, is an ultrafast power diode designed for high-performance applications. This diode is characterized by its fast recovery time, high current handling, and robust thermal characteristics. It is packaged in a TO-220AC case, making it suitable for a variety of power management and rectification tasks.

Key Specifications

Parameter Conditions Values Unit
Repetitive Reverse Voltage (Vrrm) - 600 V
Average Forward Current (IF(AV)) δ = 0.5; square-wave pulse; Tlead ≤ 95 °C 8 A
Repetitive Peak Forward Current (IFRM) δ = 0.5; tp = 25 μs; Tlead ≤ 95 °C 16 A
Non-Repetitive Peak Forward Current (IFSM) tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse 180 A
Forward Voltage (VF) IF = 8 A; Tj = 25 °C - 1.25 V
Reverse Recovery Time (trr) IF = 1 A; VR = 30 V; dIF/dt = 50 A/us; Tj = 25 °C - 90 ns
Junction Temperature (Tj) - -65 to 175 °C
Thermal Resistance from Junction to Lead (Rth(j-lead)) - - 10 K/W
Thermal Resistance from Junction to Ambient (Rth(j-a)) - - 75 K/W
Package Type - TO-220AC -
No. of Pins - 2 -
Termination Type - Through Hole -

Key Features

  • Ultrafast Recovery Time: The MUR860J features a fast recovery time of up to 90 ns, making it ideal for high-frequency applications.
  • High Current Handling: With an average forward current of 8 A and a non-repetitive peak forward current of up to 180 A, this diode can handle demanding current requirements.
  • Robust Thermal Characteristics: The diode has a thermal resistance from junction to lead of up to 10 K/W and from junction to ambient of up to 75 K/W, ensuring reliable operation under various thermal conditions.
  • Wide Operating Temperature Range: The MUR860J operates within a temperature range of -65 °C to 175 °C, making it suitable for diverse environmental conditions.
  • RoHS Compliant: This diode is RoHS compliant, ensuring it meets environmental standards for lead-free electronics.

Applications

  • Power Supplies: The MUR860J is suitable for use in power supplies, particularly in rectifier circuits where fast recovery times are crucial.
  • Motor Control: It can be used in motor control applications, such as inverter circuits, due to its high current handling and fast recovery characteristics.
  • Switch-Mode Power Supplies: The diode's ultrafast recovery time makes it a good fit for switch-mode power supplies where high efficiency and low switching losses are required.
  • Automotive Systems: Although it is not specifically qualified for automotive applications beyond standard specifications, it can be used in various automotive power management systems with proper design and risk assessment.

Q & A

  1. What is the maximum repetitive reverse voltage of the MUR860J?

    The maximum repetitive reverse voltage (Vrrm) is 600 V.

  2. What is the average forward current rating of the MUR860J?

    The average forward current (IF(AV)) is 8 A.

  3. What is the maximum junction temperature for the MUR860J?

    The maximum junction temperature (Tj) is 175 °C.

  4. What is the typical reverse recovery time of the MUR860J?

    The typical reverse recovery time (trr) is up to 90 ns.

  5. What is the package type of the MUR860J?

    The package type is TO-220AC.

  6. Is the MUR860J RoHS compliant?

    Yes, the MUR860J is RoHS compliant.

  7. What is the thermal resistance from junction to lead for the MUR860J?

    The thermal resistance from junction to lead (Rth(j-lead)) is up to 10 K/W.

  8. What are the typical applications for the MUR860J?

    Typical applications include power supplies, motor control, switch-mode power supplies, and other high-frequency power management systems.

  9. Can the MUR860J be used in automotive applications?

    While it is not specifically qualified for automotive applications beyond standard specifications, it can be used with proper design and risk assessment.

  10. What is the storage temperature range for the MUR860J?

    The storage temperature range is -65 °C to 175 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):90 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.55
158

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MUR860J MUR860 MUR860G MUR860H
Manufacturer WeEn Semiconductors Harris Corporation onsemi onsemi
Product Status Active Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 8 A 1.5 V @ 8 A 1.5 V @ 8 A 1.5 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 90 ns 60 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Through Hole Through Hole Through Hole
Package / Case DO-214AB, SMC TO-220-2 TO-220-2 TO-220-2
Supplier Device Package SMC TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction 175°C (Max) -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

NXPSC10650B6J
NXPSC10650B6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A D2PAK
NXPSC10650Q
NXPSC10650Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220AC
BYV79E-200,127
BYV79E-200,127
WeEn Semiconductors
DIODE GEN PURP 200V 14A TO220AC
BYV29-600,127
BYV29-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220AC
BT148-500R,127
BT148-500R,127
WeEn Semiconductors
SCR 500V 4A SOT82-3
BT169DEP
BT169DEP
WeEn Semiconductors
SCR 400V 800MA TO92-3
BTA41-800BQ
BTA41-800BQ
WeEn Semiconductors
BTA41-800BQ/II TO3P/STANDARD MAR
BTA208S-800E,118
BTA208S-800E,118
WeEn Semiconductors
TRIAC SENS GATE 800V 8A DPAK
BT136-600D,127
BT136-600D,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BTA225-600BT,127
BTA225-600BT,127
WeEn Semiconductors
TRIAC 600V 25A TO220AB
BT131-800D/L01EP
BT131-800D/L01EP
WeEn Semiconductors
TRIAC SENS GATE 800V 1A
PHD13005,127
PHD13005,127
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB