MUR860J
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WeEn Semiconductors MUR860J

Manufacturer No:
MUR860J
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
ULTRAFAST POWER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR860J, produced by WeEn Semiconductors, is an ultrafast power diode designed for high-performance applications. This diode is characterized by its fast recovery time, high current handling, and robust thermal characteristics. It is packaged in a TO-220AC case, making it suitable for a variety of power management and rectification tasks.

Key Specifications

Parameter Conditions Values Unit
Repetitive Reverse Voltage (Vrrm) - 600 V
Average Forward Current (IF(AV)) δ = 0.5; square-wave pulse; Tlead ≤ 95 °C 8 A
Repetitive Peak Forward Current (IFRM) δ = 0.5; tp = 25 μs; Tlead ≤ 95 °C 16 A
Non-Repetitive Peak Forward Current (IFSM) tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse 180 A
Forward Voltage (VF) IF = 8 A; Tj = 25 °C - 1.25 V
Reverse Recovery Time (trr) IF = 1 A; VR = 30 V; dIF/dt = 50 A/us; Tj = 25 °C - 90 ns
Junction Temperature (Tj) - -65 to 175 °C
Thermal Resistance from Junction to Lead (Rth(j-lead)) - - 10 K/W
Thermal Resistance from Junction to Ambient (Rth(j-a)) - - 75 K/W
Package Type - TO-220AC -
No. of Pins - 2 -
Termination Type - Through Hole -

Key Features

  • Ultrafast Recovery Time: The MUR860J features a fast recovery time of up to 90 ns, making it ideal for high-frequency applications.
  • High Current Handling: With an average forward current of 8 A and a non-repetitive peak forward current of up to 180 A, this diode can handle demanding current requirements.
  • Robust Thermal Characteristics: The diode has a thermal resistance from junction to lead of up to 10 K/W and from junction to ambient of up to 75 K/W, ensuring reliable operation under various thermal conditions.
  • Wide Operating Temperature Range: The MUR860J operates within a temperature range of -65 °C to 175 °C, making it suitable for diverse environmental conditions.
  • RoHS Compliant: This diode is RoHS compliant, ensuring it meets environmental standards for lead-free electronics.

Applications

  • Power Supplies: The MUR860J is suitable for use in power supplies, particularly in rectifier circuits where fast recovery times are crucial.
  • Motor Control: It can be used in motor control applications, such as inverter circuits, due to its high current handling and fast recovery characteristics.
  • Switch-Mode Power Supplies: The diode's ultrafast recovery time makes it a good fit for switch-mode power supplies where high efficiency and low switching losses are required.
  • Automotive Systems: Although it is not specifically qualified for automotive applications beyond standard specifications, it can be used in various automotive power management systems with proper design and risk assessment.

Q & A

  1. What is the maximum repetitive reverse voltage of the MUR860J?

    The maximum repetitive reverse voltage (Vrrm) is 600 V.

  2. What is the average forward current rating of the MUR860J?

    The average forward current (IF(AV)) is 8 A.

  3. What is the maximum junction temperature for the MUR860J?

    The maximum junction temperature (Tj) is 175 °C.

  4. What is the typical reverse recovery time of the MUR860J?

    The typical reverse recovery time (trr) is up to 90 ns.

  5. What is the package type of the MUR860J?

    The package type is TO-220AC.

  6. Is the MUR860J RoHS compliant?

    Yes, the MUR860J is RoHS compliant.

  7. What is the thermal resistance from junction to lead for the MUR860J?

    The thermal resistance from junction to lead (Rth(j-lead)) is up to 10 K/W.

  8. What are the typical applications for the MUR860J?

    Typical applications include power supplies, motor control, switch-mode power supplies, and other high-frequency power management systems.

  9. Can the MUR860J be used in automotive applications?

    While it is not specifically qualified for automotive applications beyond standard specifications, it can be used with proper design and risk assessment.

  10. What is the storage temperature range for the MUR860J?

    The storage temperature range is -65 °C to 175 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):90 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:175°C (Max)
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Similar Products

Part Number MUR860J MUR860 MUR860G MUR860H
Manufacturer WeEn Semiconductors Harris Corporation onsemi onsemi
Product Status Active Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 8 A 1.5 V @ 8 A 1.5 V @ 8 A 1.5 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 90 ns 60 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Through Hole Through Hole Through Hole
Package / Case DO-214AB, SMC TO-220-2 TO-220-2 TO-220-2
Supplier Device Package SMC TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction 175°C (Max) -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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