MUR860J
  • Share:

WeEn Semiconductors MUR860J

Manufacturer No:
MUR860J
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
ULTRAFAST POWER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR860J, produced by WeEn Semiconductors, is an ultrafast power diode designed for high-performance applications. This diode is characterized by its fast recovery time, high current handling, and robust thermal characteristics. It is packaged in a TO-220AC case, making it suitable for a variety of power management and rectification tasks.

Key Specifications

Parameter Conditions Values Unit
Repetitive Reverse Voltage (Vrrm) - 600 V
Average Forward Current (IF(AV)) δ = 0.5; square-wave pulse; Tlead ≤ 95 °C 8 A
Repetitive Peak Forward Current (IFRM) δ = 0.5; tp = 25 μs; Tlead ≤ 95 °C 16 A
Non-Repetitive Peak Forward Current (IFSM) tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse 180 A
Forward Voltage (VF) IF = 8 A; Tj = 25 °C - 1.25 V
Reverse Recovery Time (trr) IF = 1 A; VR = 30 V; dIF/dt = 50 A/us; Tj = 25 °C - 90 ns
Junction Temperature (Tj) - -65 to 175 °C
Thermal Resistance from Junction to Lead (Rth(j-lead)) - - 10 K/W
Thermal Resistance from Junction to Ambient (Rth(j-a)) - - 75 K/W
Package Type - TO-220AC -
No. of Pins - 2 -
Termination Type - Through Hole -

Key Features

  • Ultrafast Recovery Time: The MUR860J features a fast recovery time of up to 90 ns, making it ideal for high-frequency applications.
  • High Current Handling: With an average forward current of 8 A and a non-repetitive peak forward current of up to 180 A, this diode can handle demanding current requirements.
  • Robust Thermal Characteristics: The diode has a thermal resistance from junction to lead of up to 10 K/W and from junction to ambient of up to 75 K/W, ensuring reliable operation under various thermal conditions.
  • Wide Operating Temperature Range: The MUR860J operates within a temperature range of -65 °C to 175 °C, making it suitable for diverse environmental conditions.
  • RoHS Compliant: This diode is RoHS compliant, ensuring it meets environmental standards for lead-free electronics.

Applications

  • Power Supplies: The MUR860J is suitable for use in power supplies, particularly in rectifier circuits where fast recovery times are crucial.
  • Motor Control: It can be used in motor control applications, such as inverter circuits, due to its high current handling and fast recovery characteristics.
  • Switch-Mode Power Supplies: The diode's ultrafast recovery time makes it a good fit for switch-mode power supplies where high efficiency and low switching losses are required.
  • Automotive Systems: Although it is not specifically qualified for automotive applications beyond standard specifications, it can be used in various automotive power management systems with proper design and risk assessment.

Q & A

  1. What is the maximum repetitive reverse voltage of the MUR860J?

    The maximum repetitive reverse voltage (Vrrm) is 600 V.

  2. What is the average forward current rating of the MUR860J?

    The average forward current (IF(AV)) is 8 A.

  3. What is the maximum junction temperature for the MUR860J?

    The maximum junction temperature (Tj) is 175 °C.

  4. What is the typical reverse recovery time of the MUR860J?

    The typical reverse recovery time (trr) is up to 90 ns.

  5. What is the package type of the MUR860J?

    The package type is TO-220AC.

  6. Is the MUR860J RoHS compliant?

    Yes, the MUR860J is RoHS compliant.

  7. What is the thermal resistance from junction to lead for the MUR860J?

    The thermal resistance from junction to lead (Rth(j-lead)) is up to 10 K/W.

  8. What are the typical applications for the MUR860J?

    Typical applications include power supplies, motor control, switch-mode power supplies, and other high-frequency power management systems.

  9. Can the MUR860J be used in automotive applications?

    While it is not specifically qualified for automotive applications beyond standard specifications, it can be used with proper design and risk assessment.

  10. What is the storage temperature range for the MUR860J?

    The storage temperature range is -65 °C to 175 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):90 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:SMC
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.55
158

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S
DD15S20Z0S
CONN D-SUB HD RCPT 15P SLDR CUP

Similar Products

Part Number MUR860J MUR860 MUR860G MUR860H
Manufacturer WeEn Semiconductors Harris Corporation onsemi onsemi
Product Status Active Obsolete Active Obsolete
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 8 A 1.5 V @ 8 A 1.5 V @ 8 A 1.5 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 90 ns 60 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V 10 µA @ 600 V
Capacitance @ Vr, F - - - -
Mounting Type Surface Mount Through Hole Through Hole Through Hole
Package / Case DO-214AB, SMC TO-220-2 TO-220-2 TO-220-2
Supplier Device Package SMC TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction 175°C (Max) -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MBRM120LT3G
MBRM120LT3G
onsemi
DIODE SCHOTTKY 20V 1A POWERMITE
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

BYV42E-200,127
BYV42E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
BYV25FD-600,118
BYV25FD-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 5A DPAK
BYC8-600P,127
BYC8-600P,127
WeEn Semiconductors
DIODE GEN PURP 600V 8A TO220AC
BYV29X-600AQ
BYV29X-600AQ
WeEn Semiconductors
DIODE GEN PURP TO220F
BT151X-650LTFQ
BT151X-650LTFQ
WeEn Semiconductors
SCR 650V 12A TO220F
BT151-650R,127
BT151-650R,127
WeEn Semiconductors
SCR 650V 12A TO220AB
BTA2008W-600D,135
BTA2008W-600D,135
WeEn Semiconductors
TRIAC SENS GATE 600V 0.8A SC73
Z0109NN0,135
Z0109NN0,135
WeEn Semiconductors
TRIAC SENS GATE 800V 1A SC73
ACTT2X-800E/DGQ
ACTT2X-800E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 800V 2A TO220F
BT139B-800G,118
BT139B-800G,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT136S-600D,118
BT136S-600D,118
WeEn Semiconductors
TRIAC SENS GATE 600V 4A DPAK
Z0109MAML
Z0109MAML
WeEn Semiconductors
Z0109MA/TO-92/STANDARD MARKING