MUR860H
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onsemi MUR860H

Manufacturer No:
MUR860H
Manufacturer:
onsemi
Package:
Tray
Description:
DIODE GEN PURPOSE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR860H is an ultrafast power diode produced by ON Semiconductor. This component is designed for high-performance applications in switching power supplies, inverters, and as free-wheeling diodes. It features a robust SMC package, ensuring high reliability and efficiency in various power management systems.

Key Specifications

Characteristic Symbol Unit Value
Peak Repetitive Reverse Voltage VRRM V 600
Crest Working Reverse Voltage VRWM V 600
Average Rectified Forward Current IF(AV) A 8.0
Peak Repetitive Forward Current IFRM A 16
Nonrepetitive Peak Surge Current IFSM A 180
Operating Junction Temperature TJ °C -65 to +175
Storage Temperature Range Tstg °C -65 to +175
Maximum Instantaneous Forward Voltage vF V 1.25 (at IF = 8 A, TJ = 25°C)
Maximum Reverse Recovery Time trr ns 25
Thermal Resistance, Junction-to-Ambient Rth(j-a) °C/W 75

Key Features

  • Ultrafast Recovery Time: The MUR860H boasts a fast recovery time of 25 nanoseconds, making it suitable for high-frequency applications.
  • High Operating Junction Temperature: It can operate at junction temperatures up to 175°C, ensuring reliability in demanding environments.
  • Low Forward Voltage: The diode has a low forward voltage drop, reducing power losses and improving efficiency.
  • Low Leakage Current: It features low reverse leakage current, which is crucial for minimizing standby power consumption.
  • High Voltage Capability: With a peak repetitive reverse voltage of 600 V, this diode is designed to handle high-voltage applications.
  • ESD Ratings: The device has robust ESD ratings, including Machine Model (> 400 V) and Human Body Model (> 16,000 V).
  • Pb-Free and RoHS Compliant: The MUR860H is lead-free and compliant with RoHS regulations, making it environmentally friendly.
  • AEC-Q101 Qualified: It is qualified to the AEC-Q101 standard, making it suitable for automotive and other stringent applications.

Applications

  • Switching Power Supplies: The MUR860H is ideal for use in switching power supplies due to its fast recovery time and high voltage capability.
  • Inverters: It is suitable for inverter applications where high efficiency and reliability are critical.
  • Free-Wheeling Diodes: The diode can be used as a free-wheeling diode in various power management circuits.
  • Automotive Systems: With its AEC-Q101 qualification, it is suitable for use in automotive systems that require high reliability and performance.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR860H?

    The peak repetitive reverse voltage (VRRM) of the MUR860H is 600 V.

  2. What is the maximum operating junction temperature of the MUR860H?

    The maximum operating junction temperature (TJ) is 175°C.

  3. What is the average rectified forward current rating of the MUR860H?

    The average rectified forward current (IF(AV)) is 8.0 A.

  4. What is the reverse recovery time of the MUR860H?

    The reverse recovery time (trr) is 25 nanoseconds.

  5. Is the MUR860H Pb-free and RoHS compliant?
  6. What is the thermal resistance from junction to ambient for the MUR860H?

    The thermal resistance from junction to ambient (Rth(j-a)) is 75 °C/W.

  7. What are the ESD ratings for the MUR860H?

    The ESD ratings include Machine Model (> 400 V) and Human Body Model (> 16,000 V).

  8. Is the MUR860H qualified to any automotive standards?
  9. What package type does the MUR860H come in?

    The MUR860H comes in an SMC package.

  10. What are some typical applications for the MUR860H?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MUR860H MUR860J MUR8L60H MUR460H MUR820H MUR840H MUR860 MUR860G
Manufacturer onsemi WeEn Semiconductors Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation onsemi onsemi Harris Corporation onsemi
Product Status Obsolete Active Active Active Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 200 V 400 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A (DC) 4A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A 1.25 V @ 8 A 1.3 V @ 8 A 1.28 V @ 4 A 975 mV @ 8 A 1.3 V @ 8 A 1.5 V @ 8 A 1.5 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 90 ns 65 ns 50 ns 35 ns 60 ns 60 ns 60 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V 5 µA @ 200 V 10 µA @ 400 V 10 µA @ 600 V 10 µA @ 600 V
Capacitance @ Vr, F - - - 65pF @ 4V, 1MHz - - - -
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 DO-214AB, SMC TO-220-2 DO-201AD, Axial TO-220-2 TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 SMC TO-220AC DO-201AD TO-220-2 TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction -65°C ~ 175°C 175°C (Max) -55°C ~ 175°C -55°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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