SMMSD103T1G
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onsemi SMMSD103T1G

Manufacturer No:
SMMSD103T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD123
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMSD103T1G is a high voltage switching diode designed for high voltage, high speed switching applications. This device is housed in a SOD-123 surface mount package, making it ideal for automated insertion. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring environmental sustainability. The 'S' prefix indicates that it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

CharacteristicSymbolValueUnit
Continuous Reverse VoltageVR250V
Peak Forward CurrentIF200mA
Peak Forward Surge CurrentIFM(surge)625mA
Forward Voltage (IF = 100 mA)VF1000mV
Forward Voltage (IF = 200 mA)VF1250mV
Reverse Voltage Leakage Current (VR = 200 V, TJ = 25°C)IR1.0μA
Reverse Breakdown Voltage (IBR = 100 μA)V(BR)250V
Diode Capacitance (VR = 0, f = 1.0 MHz)CD5.0pF
Reverse Recovery Time (IF = IR = 30 mA, RL = 100 Ω)trr50ns
Junction and Storage Temperature RangeTJ, Tstg-55 to +150°C
Thermal Resistance, Junction-to-CaseRθJL174°C/W
Thermal Resistance, Junction-to-AmbientRθJA492°C/W

Key Features

  • AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other demanding applications.
  • S Prefix for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  • High voltage capability with a continuous reverse voltage of 250 V.
  • High speed switching with a reverse recovery time of 50 ns.
  • Surface mount SOD-123 package for automated insertion.

Applications

The SMMSD103T1G is designed for high voltage, high speed switching applications. It is particularly suitable for use in automotive systems, industrial power supplies, and other high-reliability applications where fast switching and high voltage handling are required. Additionally, it can be used in general-purpose switching and rectification circuits where its high voltage and low leakage characteristics are beneficial.

Q & A

  1. What is the continuous reverse voltage rating of the SMMSD103T1G? The continuous reverse voltage rating is 250 V.
  2. What is the peak forward current rating of the SMMSD103T1G? The peak forward current rating is 200 mA.
  3. What is the reverse recovery time of the SMMSD103T1G? The reverse recovery time is 50 ns.
  4. Is the SMMSD103T1G RoHS compliant? Yes, the SMMSD103T1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  5. What package type is the SMMSD103T1G available in? The SMMSD103T1G is available in a SOD-123 surface mount package.
  6. What are the junction and storage temperature ranges for the SMMSD103T1G? The junction and storage temperature ranges are -55°C to +150°C.
  7. Is the SMMSD103T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  8. What is the thermal resistance from junction to ambient for the SMMSD103T1G? The thermal resistance from junction to ambient is 492°C/W.
  9. What is the forward voltage drop at 100 mA and 200 mA for the SMMSD103T1G? The forward voltage drop is 1000 mV at 100 mA and 1250 mV at 200 mA.
  10. What is the diode capacitance of the SMMSD103T1G? The diode capacitance is 5.0 pF at VR = 0 and f = 1.0 MHz.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:1 µA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123
Supplier Device Package:SOD-123
Operating Temperature - Junction:-55°C ~ 150°C
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MMSD103T1G
MMSD103T1G
DIODE GEN PURP 250V 200MA SOD123

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