Overview
The BAS16L-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-performance applications requiring fast switching speeds and low forward voltage drop. It is packaged in a leadless ultra small DFN1006-2A package, making it ideal for space-constrained designs.
Key Specifications
Parameter | Test Condition | Symbol | Value | Unit |
---|---|---|---|---|
Reverse Voltage | - | VR | 100 | V |
Forward Current (Average) | Half wave rectification with resistive load and f ≥ 50 Hz | IF(AV) | 250 | mA |
Forward Current (Peak) | - | IF | 350 | mA |
Peak Forward Surge Current (tp = 1 μs) | - | IFSM | 9 | A |
Forward Voltage (IF = 150 mA) | - | VF | 1.25 | V |
Reverse Recovery Time | IF = 10 mA, IR = 10 mA, iR = 1 mA | trr | 4 | ns |
Thermal Resistance Junction to Ambient Air | On FR-4 board with recommended soldering footprint | RthJA | 420 | K/W |
Maximum Junction Temperature | - | Tj | 150 | °C |
Storage Temperature Range | - | Tstg | -55 to +150 | °C |
Operating Temperature Range | - | Top | -55 to +150 | °C |
Key Features
- Silicon epitaxial planar diode with ultra fast switching speed (≤ 4 ns)
- Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm)
- Surface-mounted device (SMD) with visible and sidewall plated / wettable flanks
- AEC-Q101 qualified available for automotive applications
- High conductance and low forward voltage drop
- Moisture sensitivity level (MSL) 1
- Soldering can be checked by standard visual inspection, no X-ray inspection necessary
Applications
The BAS16L-G3-08 diode is suitable for a variety of high-performance applications, including:
- Automotive systems (AEC-Q101 qualified)
- Consumer electronics requiring fast switching and low power dissipation
- Industrial control systems and power supplies
- High-frequency switching circuits
- General-purpose switching and rectification in compact designs
Q & A
- What is the maximum reverse voltage of the BAS16L-G3-08 diode?
The maximum reverse voltage is 100 V. - What is the average forward current rating of the BAS16L-G3-08?
The average forward current rating is 250 mA. - What is the peak forward surge current rating for a 1 μs pulse?
The peak forward surge current rating for a 1 μs pulse is 9 A. - What is the forward voltage drop at 150 mA?
The forward voltage drop at 150 mA is 1.25 V. - What is the reverse recovery time of the BAS16L-G3-08?
The reverse recovery time is 4 ns. - What is the thermal resistance junction to ambient air for the BAS16L-G3-08?
The thermal resistance junction to ambient air is 420 K/W on an FR-4 board with the recommended soldering footprint. - What is the maximum junction temperature of the BAS16L-G3-08?
The maximum junction temperature is 150 °C. - What is the storage temperature range for the BAS16L-G3-08?
The storage temperature range is -55 to +150 °C. - Is the BAS16L-G3-08 AEC-Q101 qualified?
Yes, the BAS16L-G3-08 is AEC-Q101 qualified for automotive applications. - What package type is used for the BAS16L-G3-08?
The BAS16L-G3-08 is packaged in a leadless ultra small DFN1006-2A package.