BAS16L-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS16L-G3-08

Manufacturer No:
BAS16L-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SWITCHING DIODE GENPURP DFN1006-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16L-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-performance applications requiring fast switching speeds and low forward voltage drop. It is packaged in a leadless ultra small DFN1006-2A package, making it ideal for space-constrained designs.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse Voltage-VR100V
Forward Current (Average)Half wave rectification with resistive load and f ≥ 50 HzIF(AV)250mA
Forward Current (Peak)-IF350mA
Peak Forward Surge Current (tp = 1 μs)-IFSM9A
Forward Voltage (IF = 150 mA)-VF1.25V
Reverse Recovery TimeIF = 10 mA, IR = 10 mA, iR = 1 mAtrr4ns
Thermal Resistance Junction to Ambient AirOn FR-4 board with recommended soldering footprintRthJA420K/W
Maximum Junction Temperature-Tj150°C
Storage Temperature Range-Tstg-55 to +150°C
Operating Temperature Range-Top-55 to +150°C

Key Features

  • Silicon epitaxial planar diode with ultra fast switching speed (≤ 4 ns)
  • Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm)
  • Surface-mounted device (SMD) with visible and sidewall plated / wettable flanks
  • AEC-Q101 qualified available for automotive applications
  • High conductance and low forward voltage drop
  • Moisture sensitivity level (MSL) 1
  • Soldering can be checked by standard visual inspection, no X-ray inspection necessary

Applications

The BAS16L-G3-08 diode is suitable for a variety of high-performance applications, including:

  • Automotive systems (AEC-Q101 qualified)
  • Consumer electronics requiring fast switching and low power dissipation
  • Industrial control systems and power supplies
  • High-frequency switching circuits
  • General-purpose switching and rectification in compact designs

Q & A

  1. What is the maximum reverse voltage of the BAS16L-G3-08 diode?
    The maximum reverse voltage is 100 V.
  2. What is the average forward current rating of the BAS16L-G3-08?
    The average forward current rating is 250 mA.
  3. What is the peak forward surge current rating for a 1 μs pulse?
    The peak forward surge current rating for a 1 μs pulse is 9 A.
  4. What is the forward voltage drop at 150 mA?
    The forward voltage drop at 150 mA is 1.25 V.
  5. What is the reverse recovery time of the BAS16L-G3-08?
    The reverse recovery time is 4 ns.
  6. What is the thermal resistance junction to ambient air for the BAS16L-G3-08?
    The thermal resistance junction to ambient air is 420 K/W on an FR-4 board with the recommended soldering footprint.
  7. What is the maximum junction temperature of the BAS16L-G3-08?
    The maximum junction temperature is 150 °C.
  8. What is the storage temperature range for the BAS16L-G3-08?
    The storage temperature range is -55 to +150 °C.
  9. Is the BAS16L-G3-08 AEC-Q101 qualified?
    Yes, the BAS16L-G3-08 is AEC-Q101 qualified for automotive applications.
  10. What package type is used for the BAS16L-G3-08?
    The BAS16L-G3-08 is packaged in a leadless ultra small DFN1006-2A package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 100 V
Capacitance @ Vr, F:0.36pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.33
2,421

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Similar Products

Part Number BAS16L-G3-08 BAS16L-HG3-08 BAS16-G3-08 BAS16D-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 75 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 150mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 100 V 1 µA @ 100 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 0.36pF @ 0V, 1MHz 0.36pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric) TO-236-3, SC-59, SOT-23-3 SOD-123
Supplier Device Package DFN1006-2A DFN1006-2A SOT-23-3 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
PMEG2010AEBF
PMEG2010AEBF
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
PMEG4002EL315
PMEG4002EL315
Nexperia USA Inc.
NOW NEXPERIA PMEG4002EL RECTIFIE
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MBRM120LT3
MBRM120LT3
onsemi
DIODE SCHOTTKY 1A 20V POWERMITE
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL

Related Product By Brand

SM15T39A-E3/9AT
SM15T39A-E3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T15CA-M3/52
SM6T15CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T100CA-M3/9AT
SM15T100CA-M3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 85.5VWM 137VC DO214AB
SM15T200CAHM3_A/I
SM15T200CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T6V8CAHM3_A/I
SM15T6V8CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AB
BAV70-HE3-08
BAV70-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 70V 250MA SOT23
LL4150-M-08
LL4150-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 600MA SOD80
MURS260HE3/52T
MURS260HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX84C10-E3-08
BZX84C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 300MW SOT23-3
BZX84C16-HE3-08
BZX84C16-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 16V 300MW SOT23-3
BZX84C22-E3-18
BZX84C22-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84C51-E3-18
BZX84C51-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3