BAS16L-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS16L-G3-08

Manufacturer No:
BAS16L-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SWITCHING DIODE GENPURP DFN1006-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16L-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-performance applications requiring fast switching speeds and low forward voltage drop. It is packaged in a leadless ultra small DFN1006-2A package, making it ideal for space-constrained designs.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse Voltage-VR100V
Forward Current (Average)Half wave rectification with resistive load and f ≥ 50 HzIF(AV)250mA
Forward Current (Peak)-IF350mA
Peak Forward Surge Current (tp = 1 μs)-IFSM9A
Forward Voltage (IF = 150 mA)-VF1.25V
Reverse Recovery TimeIF = 10 mA, IR = 10 mA, iR = 1 mAtrr4ns
Thermal Resistance Junction to Ambient AirOn FR-4 board with recommended soldering footprintRthJA420K/W
Maximum Junction Temperature-Tj150°C
Storage Temperature Range-Tstg-55 to +150°C
Operating Temperature Range-Top-55 to +150°C

Key Features

  • Silicon epitaxial planar diode with ultra fast switching speed (≤ 4 ns)
  • Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm)
  • Surface-mounted device (SMD) with visible and sidewall plated / wettable flanks
  • AEC-Q101 qualified available for automotive applications
  • High conductance and low forward voltage drop
  • Moisture sensitivity level (MSL) 1
  • Soldering can be checked by standard visual inspection, no X-ray inspection necessary

Applications

The BAS16L-G3-08 diode is suitable for a variety of high-performance applications, including:

  • Automotive systems (AEC-Q101 qualified)
  • Consumer electronics requiring fast switching and low power dissipation
  • Industrial control systems and power supplies
  • High-frequency switching circuits
  • General-purpose switching and rectification in compact designs

Q & A

  1. What is the maximum reverse voltage of the BAS16L-G3-08 diode?
    The maximum reverse voltage is 100 V.
  2. What is the average forward current rating of the BAS16L-G3-08?
    The average forward current rating is 250 mA.
  3. What is the peak forward surge current rating for a 1 μs pulse?
    The peak forward surge current rating for a 1 μs pulse is 9 A.
  4. What is the forward voltage drop at 150 mA?
    The forward voltage drop at 150 mA is 1.25 V.
  5. What is the reverse recovery time of the BAS16L-G3-08?
    The reverse recovery time is 4 ns.
  6. What is the thermal resistance junction to ambient air for the BAS16L-G3-08?
    The thermal resistance junction to ambient air is 420 K/W on an FR-4 board with the recommended soldering footprint.
  7. What is the maximum junction temperature of the BAS16L-G3-08?
    The maximum junction temperature is 150 °C.
  8. What is the storage temperature range for the BAS16L-G3-08?
    The storage temperature range is -55 to +150 °C.
  9. Is the BAS16L-G3-08 AEC-Q101 qualified?
    Yes, the BAS16L-G3-08 is AEC-Q101 qualified for automotive applications.
  10. What package type is used for the BAS16L-G3-08?
    The BAS16L-G3-08 is packaged in a leadless ultra small DFN1006-2A package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 100 V
Capacitance @ Vr, F:0.36pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.33
2,421

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS16L-G3-08 BAS16L-HG3-08 BAS16-G3-08 BAS16D-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 75 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 150mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 100 V 1 µA @ 100 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 0.36pF @ 0V, 1MHz 0.36pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric) TO-236-3, SC-59, SOT-23-3 SOD-123
Supplier Device Package DFN1006-2A DFN1006-2A SOT-23-3 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
STPS2H100A
STPS2H100A
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMA
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
SBRS8130LT3G-IR02
SBRS8130LT3G-IR02
onsemi
DIODE SCHOTTKY
BAT54T-HF
BAT54T-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

SM6T18CA-E3/52
SM6T18CA-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
SM15T15A-E3/57T
SM15T15A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AB
SM6T220CAHE3_A/I
SM6T220CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM6T220CAHM3_A/H
SM6T220CAHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
SM15T220AHE3/9AT
SM15T220AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AB
SM6T220CAHM3/I
SM6T220CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AA
BAS70-06-E3-08
BAS70-06-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 70V SOT23
BAS40-05-E3-08
BAS40-05-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 40V SOT23
MURS260HE3_A/I
MURS260HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
BZX384C6V8-HE3-18
BZX384C6V8-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 200MW SOD323
BZX384B75-E3-18
BZX384B75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323
BZX384C2V4-G3-08
BZX384C2V4-G3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 200MW SOD323