BAS16L-G3-08
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Vishay General Semiconductor - Diodes Division BAS16L-G3-08

Manufacturer No:
BAS16L-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SWITCHING DIODE GENPURP DFN1006-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16L-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-performance applications requiring fast switching speeds and low forward voltage drop. It is packaged in a leadless ultra small DFN1006-2A package, making it ideal for space-constrained designs.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse Voltage-VR100V
Forward Current (Average)Half wave rectification with resistive load and f ≥ 50 HzIF(AV)250mA
Forward Current (Peak)-IF350mA
Peak Forward Surge Current (tp = 1 μs)-IFSM9A
Forward Voltage (IF = 150 mA)-VF1.25V
Reverse Recovery TimeIF = 10 mA, IR = 10 mA, iR = 1 mAtrr4ns
Thermal Resistance Junction to Ambient AirOn FR-4 board with recommended soldering footprintRthJA420K/W
Maximum Junction Temperature-Tj150°C
Storage Temperature Range-Tstg-55 to +150°C
Operating Temperature Range-Top-55 to +150°C

Key Features

  • Silicon epitaxial planar diode with ultra fast switching speed (≤ 4 ns)
  • Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm)
  • Surface-mounted device (SMD) with visible and sidewall plated / wettable flanks
  • AEC-Q101 qualified available for automotive applications
  • High conductance and low forward voltage drop
  • Moisture sensitivity level (MSL) 1
  • Soldering can be checked by standard visual inspection, no X-ray inspection necessary

Applications

The BAS16L-G3-08 diode is suitable for a variety of high-performance applications, including:

  • Automotive systems (AEC-Q101 qualified)
  • Consumer electronics requiring fast switching and low power dissipation
  • Industrial control systems and power supplies
  • High-frequency switching circuits
  • General-purpose switching and rectification in compact designs

Q & A

  1. What is the maximum reverse voltage of the BAS16L-G3-08 diode?
    The maximum reverse voltage is 100 V.
  2. What is the average forward current rating of the BAS16L-G3-08?
    The average forward current rating is 250 mA.
  3. What is the peak forward surge current rating for a 1 μs pulse?
    The peak forward surge current rating for a 1 μs pulse is 9 A.
  4. What is the forward voltage drop at 150 mA?
    The forward voltage drop at 150 mA is 1.25 V.
  5. What is the reverse recovery time of the BAS16L-G3-08?
    The reverse recovery time is 4 ns.
  6. What is the thermal resistance junction to ambient air for the BAS16L-G3-08?
    The thermal resistance junction to ambient air is 420 K/W on an FR-4 board with the recommended soldering footprint.
  7. What is the maximum junction temperature of the BAS16L-G3-08?
    The maximum junction temperature is 150 °C.
  8. What is the storage temperature range for the BAS16L-G3-08?
    The storage temperature range is -55 to +150 °C.
  9. Is the BAS16L-G3-08 AEC-Q101 qualified?
    Yes, the BAS16L-G3-08 is AEC-Q101 qualified for automotive applications.
  10. What package type is used for the BAS16L-G3-08?
    The BAS16L-G3-08 is packaged in a leadless ultra small DFN1006-2A package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 100 V
Capacitance @ Vr, F:0.36pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number BAS16L-G3-08 BAS16L-HG3-08 BAS16-G3-08 BAS16D-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 75 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 150mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 100 V 1 µA @ 100 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 0.36pF @ 0V, 1MHz 0.36pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric) TO-236-3, SC-59, SOT-23-3 SOD-123
Supplier Device Package DFN1006-2A DFN1006-2A SOT-23-3 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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