BAS16L-G3-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS16L-G3-08

Manufacturer No:
BAS16L-G3-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
SWITCHING DIODE GENPURP DFN1006-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16L-G3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed for high-performance applications requiring fast switching speeds and low forward voltage drop. It is packaged in a leadless ultra small DFN1006-2A package, making it ideal for space-constrained designs.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Reverse Voltage-VR100V
Forward Current (Average)Half wave rectification with resistive load and f ≥ 50 HzIF(AV)250mA
Forward Current (Peak)-IF350mA
Peak Forward Surge Current (tp = 1 μs)-IFSM9A
Forward Voltage (IF = 150 mA)-VF1.25V
Reverse Recovery TimeIF = 10 mA, IR = 10 mA, iR = 1 mAtrr4ns
Thermal Resistance Junction to Ambient AirOn FR-4 board with recommended soldering footprintRthJA420K/W
Maximum Junction Temperature-Tj150°C
Storage Temperature Range-Tstg-55 to +150°C
Operating Temperature Range-Top-55 to +150°C

Key Features

  • Silicon epitaxial planar diode with ultra fast switching speed (≤ 4 ns)
  • Leadless ultra small DFN1006-2A package (1 mm × 0.6 mm × 0.45 mm)
  • Surface-mounted device (SMD) with visible and sidewall plated / wettable flanks
  • AEC-Q101 qualified available for automotive applications
  • High conductance and low forward voltage drop
  • Moisture sensitivity level (MSL) 1
  • Soldering can be checked by standard visual inspection, no X-ray inspection necessary

Applications

The BAS16L-G3-08 diode is suitable for a variety of high-performance applications, including:

  • Automotive systems (AEC-Q101 qualified)
  • Consumer electronics requiring fast switching and low power dissipation
  • Industrial control systems and power supplies
  • High-frequency switching circuits
  • General-purpose switching and rectification in compact designs

Q & A

  1. What is the maximum reverse voltage of the BAS16L-G3-08 diode?
    The maximum reverse voltage is 100 V.
  2. What is the average forward current rating of the BAS16L-G3-08?
    The average forward current rating is 250 mA.
  3. What is the peak forward surge current rating for a 1 μs pulse?
    The peak forward surge current rating for a 1 μs pulse is 9 A.
  4. What is the forward voltage drop at 150 mA?
    The forward voltage drop at 150 mA is 1.25 V.
  5. What is the reverse recovery time of the BAS16L-G3-08?
    The reverse recovery time is 4 ns.
  6. What is the thermal resistance junction to ambient air for the BAS16L-G3-08?
    The thermal resistance junction to ambient air is 420 K/W on an FR-4 board with the recommended soldering footprint.
  7. What is the maximum junction temperature of the BAS16L-G3-08?
    The maximum junction temperature is 150 °C.
  8. What is the storage temperature range for the BAS16L-G3-08?
    The storage temperature range is -55 to +150 °C.
  9. Is the BAS16L-G3-08 AEC-Q101 qualified?
    Yes, the BAS16L-G3-08 is AEC-Q101 qualified for automotive applications.
  10. What package type is used for the BAS16L-G3-08?
    The BAS16L-G3-08 is packaged in a leadless ultra small DFN1006-2A package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 100 V
Capacitance @ Vr, F:0.36pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:0402 (1006 Metric)
Supplier Device Package:DFN1006-2A
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.33
2,421

Please send RFQ , we will respond immediately.

Same Series
DD15S20LT2S/AA
DD15S20LT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS16L-G3-08 BAS16L-HG3-08 BAS16-G3-08 BAS16D-G3-08
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 75 V 75 V
Current - Average Rectified (Io) 250mA (DC) 250mA (DC) 150mA 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 ns 4 ns 6 ns 6 ns
Current - Reverse Leakage @ Vr 1 µA @ 100 V 1 µA @ 100 V 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 0.36pF @ 0V, 1MHz 0.36pF @ 0V, 1MHz 4pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 0402 (1006 Metric) 0402 (1006 Metric) TO-236-3, SC-59, SOT-23-3 SOD-123
Supplier Device Package DFN1006-2A DFN1006-2A SOT-23-3 SOD-123
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
BAS16XV2T1
BAS16XV2T1
onsemi
DIODE SWITCH 200MA 75V SOD523
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
BAT54HYT116
BAT54HYT116
Rohm Semiconductor
30V, 200MA, SOT-23, SINGLE, SCHO

Related Product By Brand

SM6T15CA-M3/52
SM6T15CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM6T15CAHE3_A/H
SM6T15CAHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
SM15T39CAHE3/57T
SM15T39CAHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM15T12AHM3_A/H
SM15T12AHM3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB
SM15T68CAHM3/H
SM15T68CAHM3/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AB
SM6T68CAHM3/I
SM6T68CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 58.1VWM 92VC DO214AA
BYQ28E-100-E3/45
BYQ28E-100-E3/45
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 100V 5A TO220AB
BZX84C27-E3-08
BZX84C27-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 27V 300MW SOT23-3
BZX384B7V5-HE3-08
BZX384B7V5-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 7.5V 200MW SOD323
BZX84B3V3-E3-18
BZX84B3V3-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 300MW SOT23-3
BZX384B75-E3-18
BZX384B75-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 75V 200MW SOD323