Overview
The BAS16L-HG3-08 is a small signal fast switching diode produced by Vishay General Semiconductor - Diodes Division. This diode is designed in a leadless ultra small DFN1006-2A package, measuring 1 mm x 0.6 mm x 0.45 mm, making it ideal for space-constrained applications. It is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments. The BAS16L-HG3-08 features a silicon epitaxial planar structure, enhancing its switching speed and overall performance.
Key Specifications
| Parameter | Test Condition | Symbol | Value | Unit |
|---|---|---|---|---|
| Reverse Voltage | Tamb = 25 °C, unless otherwise specified | VR | 100 | V |
| Forward Current on FR-4 board with recommended soldering footprint | Tamb = 25 °C, unless otherwise specified | IF | 250 | mA |
| Non repetitive forward current (tp = 1 μs) | Tj = 25 °C prior to surge | IFSM | 9 | A |
| Repetitive peak forward current (TL = 100 °C, tp ≤ 1 ms, D = 0.05) | Tamb = 25 °C, unless otherwise specified | IFRM | 500 | mA |
| Power dissipation on FR-4 board with recommended soldering footprint | Tamb = 25 °C, unless otherwise specified | Ptot | 300 | mW |
| Thermal resistance junction to ambient air | JEDEC® 51-3 on FR-4 board with recommended soldering footprint | RthJA | 420 | K/W |
| Maximum junction temperature | Tamb = 25 °C, unless otherwise specified | Tj max. | 150 | °C |
| Storage temperature range | - | Tstg | -55 to +150 | °C |
| Operating temperature range | - | Top | -55 to +150 | °C |
| Reverse recovery time | IF = 10 mA, IR = 10 mA, iR = 1 mA | trr | 4 | ns |
Key Features
- Silicon epitaxial planar diode with fast switching capabilities.
- Leadless ultra small DFN1006-2A package (1 mm x 0.6 mm x 0.45 mm) for space-saving designs.
- AEC-Q101 qualified, suitable for automotive and other demanding applications.
- Surface-mounted device (SMD) plastic package with visible and sidewall plated / wettable flanks for easy soldering inspection.
- No X-ray inspection necessary to meet automotive AOI requirements.
- High power dissipation compared to SOT-23 packages.
- Low reverse recovery time of 4 ns.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification, including power conversion for LED headlights, dashboard displays, and electronic control units (ECUs).
- Consumer electronics: Used in signal switching and rectification in consumer electronic devices.
- Telecommunications equipment: Employed in signal processing and protection circuits.
- Computing and industrial applications: Utilized in power management and signal processing circuits.
Q & A
- What is the maximum reverse voltage of the BAS16L-HG3-08 diode?
The maximum reverse voltage is 100 V.
- What is the forward current rating of the BAS16L-HG3-08 on an FR-4 board?
The forward current rating is 250 mA.
- What is the non-repetitive forward current rating for a 1 μs pulse?
The non-repetitive forward current rating is 9 A.
- Is the BAS16L-HG3-08 AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified.
- What is the thermal resistance junction to ambient air for the BAS16L-HG3-08?
The thermal resistance junction to ambient air is 420 K/W.
- What is the maximum junction temperature of the BAS16L-HG3-08?
The maximum junction temperature is 150 °C.
- What is the reverse recovery time of the BAS16L-HG3-08?
The reverse recovery time is 4 ns.
- What package type is used for the BAS16L-HG3-08?
The package type is leadless ultra small DFN1006-2A.
- What are the dimensions of the DFN1006-2A package?
The dimensions are 1 mm x 0.6 mm x 0.45 mm.
- What is the storage temperature range for the BAS16L-HG3-08?
The storage temperature range is -55 °C to +150 °C.
