MBR20H100CTG-E3/4W
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Vishay General Semiconductor - Diodes Division MBR20H100CTG-E3/4W

Manufacturer No:
MBR20H100CTG-E3/4W
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tube
Description:
DIODE SCHOTTKY DUAL CC TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR20H100CTG-E3/4W is a high-performance Schottky rectifier diode produced by Vishay General Semiconductor - Diodes Division. This component is part of Vishay's extensive range of power rectifiers, known for their efficiency and reliability. The MBR20H100CTG-E3/4W is designed to meet the demands of various high-power applications, including switching mode power supplies, DC/DC converters, and polarity protection.

Key Specifications

Parameter Symbol Value Unit
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current per diode IF(AV) 10 A
Peak forward surge current (8.3 ms single half sine-wave) IFSM 250 A
Maximum instantaneous forward voltage at IF = 10 A, TC = 25 °C VF 0.77 V
Maximum junction temperature TJ max. 175 °C
Package types TO-220AB, ITO-220AB, D2PAK (TO-263AB)
Operating junction and storage temperature range TJ, TSTG -65 to +175 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink VAC 1500 V

Key Features

  • Trench MOS Schottky technology: Ensures lower power losses and high efficiency.
  • Low forward voltage drop: Minimizes energy losses during operation.
  • High forward surge capability: Handles high current surges effectively.
  • Guardring for overvoltage protection: Provides enhanced protection against voltage spikes.
  • Low leakage current: Reduces standby power consumption.
  • RoHS-compliant and halogen-free options: Meets environmental and safety standards.
  • High isolation voltage: Up to 1500 V from terminal to heatsink in ITO-220AB packages.

Applications

  • Switching mode power supplies: Ideal for high-frequency rectification.
  • DC/DC converters: Suitable for efficient power conversion.
  • Freewheeling diodes: Used in applications requiring high current handling and low forward voltage drop.
  • Polarity protection: Protects against incorrect polarity connections.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the MBR20H100CTG-E3/4W?

    The maximum repetitive peak reverse voltage is 100 V.

  2. What is the maximum average forward rectified current per diode?

    The maximum average forward rectified current per diode is 10 A.

  3. What are the package types available for this diode?

    The diode is available in TO-220AB, ITO-220AB, and D2PAK (TO-263AB) packages.

  4. What is the maximum junction temperature for this component?

    The maximum junction temperature is 175 °C.

  5. Does this diode have overvoltage protection?
  6. Is the MBR20H100CTG-E3/4W RoHS-compliant?
  7. What are some typical applications for this diode?

    Typical applications include switching mode power supplies, DC/DC converters, freewheeling diodes, and polarity protection.

  8. What is the isolation voltage from terminal to heatsink in ITO-220AB packages?

    The isolation voltage is up to 1500 V.

  9. What is the peak forward surge current rating for this diode?

    The peak forward surge current is 250 A for an 8.3 ms single half sine-wave.

  10. What is the maximum instantaneous forward voltage at IF = 10 A and TC = 25 °C?

    The maximum instantaneous forward voltage is 0.77 V.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):10A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 10 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Similar Products

Part Number MBR20H100CTG-E3/4W MBR20H100CT-E3/4W MBR20H100CTG-E3/45
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Product Status Obsolete Obsolete Active
Diode Configuration 1 Pair Common Cathode 1 Pair Common Cathode 1 Pair Common Cathode
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) (per Diode) 10A 10A 10A
Voltage - Forward (Vf) (Max) @ If 850 mV @ 10 A 770 mV @ 10 A 850 mV @ 10 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 3.5 µA @ 100 V 4.5 µA @ 100 V 3.5 µA @ 100 V
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3

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