BAT54S RFG
  • Share:

Taiwan Semiconductor Corporation BAT54S RFG

Manufacturer No:
BAT54S RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY SCHOTTKY 30V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAT54S RFG is a 200mA, 30V Schottky Barrier Diode produced by Taiwan Semiconductor Corporation. This component is part of the BAT54 series, which includes the BAT54, BAT54A, BAT54C, and BAT54S models. The BAT54S RFG is designed for high-speed switching applications and is known for its fast switching speed and low forward voltage drop. It is packaged in a SOT-23 case, making it suitable for a wide range of electronic devices where space is a concern.

Key Specifications

ParameterSymbolValueUnit
Forward Current (IF)IF200mA
Repetitive Peak Reverse Voltage (VRRM)VRRM30V
Non-Repetitive Peak Forward Surge Current (IFSM)IFSM600mA
Junction Temperature RangeTJ-55 to +125°C
Storage Temperature RangeTSTG-55 to +125°C
Power DissipationPD200mW
Forward Voltage per Diode at IF = 100mAVF1V
Reverse Current at VR = 25VIR2μA
Junction Capacitance at f = 1MHz, VR = 1VCJ10pF
Reverse Recovery Timetrr5ns
Junction-to-Ambient Thermal ResistanceRӨJA500°C/W

Key Features

  • Fast switching speed
  • Surface mount device type in SOT-23 package
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS Compliant and halogen-free according to IEC 61249-2-21
  • Molding compound meets UL 94 V-0 flammability rating
  • Matte tin plated leads, solderable per J-STD-002
  • Meets JESD 201 class 1A whisker test

Applications

  • Adapters
  • Switching power supplies
  • Inverters

Q & A

  1. What is the maximum forward current of the BAT54S RFG?
    The maximum forward current (IF) is 200 mA.
  2. What is the repetitive peak reverse voltage (VRRM) of the BAT54S RFG?
    The VRRM is 30 V.
  3. What is the non-repetitive peak forward surge current (IFSM) of the BAT54S RFG?
    The IFSM is 600 mA.
  4. What is the junction temperature range of the BAT54S RFG?
    The junction temperature range is -55 to +125 °C.
  5. Is the BAT54S RFG RoHS compliant?
    Yes, the BAT54S RFG is RoHS compliant and halogen-free.
  6. What is the package type of the BAT54S RFG?
    The package type is SOT-23.
  7. What are the typical applications of the BAT54S RFG?
    The typical applications include adapters, switching power supplies, and inverters.
  8. What is the forward voltage drop at 100 mA for the BAT54S RFG?
    The forward voltage drop at 100 mA is 1 V.
  9. What is the reverse recovery time of the BAT54S RFG?
    The reverse recovery time is 5 ns.
  10. Is the BAT54S RFG suitable for high-speed switching applications?
    Yes, it is designed for high-speed switching applications due to its fast switching speed.

Product Attributes

Diode Configuration:1 Pair Series Connection
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):30 V
Current - Average Rectified (Io) (per Diode):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:2 µA @ 25 V
Operating Temperature - Junction:-55°C ~ 125°C
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.27
1,095

Please send RFQ , we will respond immediately.

Same Series
BAT54A RFG
BAT54A RFG
DIODE SCHOTTKY 30V 200MA SOT23
BAT54C RFG
BAT54C RFG
DIODE SCHOTTKY 30V 200MA SOT23
BAT54 RFG
BAT54 RFG
DIODE SCHOTTKY 30V 200MA SOT23

Similar Products

Part Number BAT54S RFG BAT54C RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Configuration 1 Pair Series Connection 1 Pair Common Anode
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 30 V 30 V
Current - Average Rectified (Io) (per Diode) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 100 mA 1 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 5 ns 5 ns
Current - Reverse Leakage @ Vr 2 µA @ 25 V 2 µA @ 25 V
Operating Temperature - Junction -55°C ~ 125°C -55°C ~ 125°C
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

Related Product By Categories

BAV170-7-F
BAV170-7-F
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT23-3
BAW56S,115
BAW56S,115
Nexperia USA Inc.
DIODE ARRAY GP 90V 250MA 6TSSOP
BAS4005E6433HTMA1
BAS4005E6433HTMA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV99W
BAV99W
Diotec Semiconductor
DIODE SOT-323 85V 0.2A 4NS
BAV99BRV-7
BAV99BRV-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
STPS200170TV1
STPS200170TV1
STMicroelectronics
DIODE MODULE 170V 100A ISOTOP
STPS12045TV
STPS12045TV
STMicroelectronics
DIODE MODULE 45V 60A ISOTOP
STTH802CFP
STTH802CFP
STMicroelectronics
DIODE ARRAY GP 200V 4A TO220FP
BAW 56W H6327
BAW 56W H6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAT54SW RVG
BAT54SW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOT323
NRVBD660CTT4G
NRVBD660CTT4G
onsemi
DIODE ARRAY SCHOTTKY 60V 3A DPAK
BAS40W-06-7
BAS40W-06-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT323

Related Product By Brand

BAW56 RFG
BAW56 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
MUR420SH
MUR420SH
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
1N4001G R1G
1N4001G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
1N4001GHR0G
1N4001GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO204AL
BAS16 RFG
BAS16 RFG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOT23
MBR10100 C0G
MBR10100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO220AC
MUR460HB0G
MUR460HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
BAT43 R0G
BAT43 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
1N4004GR0
1N4004GR0
Taiwan Semiconductor Corporation
1A,400V,STD.GLASS PASSIVATED REC
BZV55C39 L0G
BZV55C39 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 39V 500MW MINI MELF
BZV55C12 L1G
BZV55C12 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 500MW MINI MELF
BZV55C15 L1G
BZV55C15 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW MINI MELF