BAS16 RFG
  • Share:

Taiwan Semiconductor Corporation BAS16 RFG

Manufacturer No:
BAS16 RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 150MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16 RFG is a high-performance switching diode produced by Taiwan Semiconductor Corporation. This diode is designed for various electronic applications requiring low power loss and high efficiency. It is packaged in the SOT-23 format, making it ideal for automated placement in modern electronic assemblies. The BAS16 RFG is compliant with RoHS and WEEE directives, ensuring environmental sustainability, and is also halogen-free according to IEC 61249-2-21 standards.

Key Specifications

ParameterSymbolValueUnit
Repetitive Peak Reverse VoltageVRRM75V
Forward Current (Average)IF(AV)150mA
Non-Repetitive Peak Forward Surge CurrentIFSM2A
Junction Temperature RangeTJ-65 to +150°C
Storage Temperature RangeTSTG-65 to +150°C
Forward Voltage at IF=100mAVF1.0V
Reverse Current at VR=75VIR1μA
Junction CapacitanceCJ2pF
Reverse Recovery TimeTrr4ns
PackageSOT-23

Key Features

  • Low power loss and high efficiency.
  • Ideal for automated placement due to its SOT-23 package.
  • High surge current capability.
  • Compliant with RoHS and WEEE directives.
  • Halogen-free according to IEC 61249-2-21 standards.
  • Matte tin plated leads, solderable per J-STD-002.
  • Meets JESD 201 class 1A whisker test.

Applications

The BAS16 RFG is suitable for a variety of applications, including:

  • Switching mode power supplies (SMPS).
  • General-purpose switching and rectification in electronic circuits.
  • Automotive and industrial electronics where high reliability and efficiency are required.

Q & A

  1. What is the repetitive peak reverse voltage of the BAS16 RFG?
    The repetitive peak reverse voltage (VRRM) of the BAS16 RFG is 75V.
  2. What is the average forward current rating of the BAS16 RFG?
    The average forward current (IF(AV)) rating is 150mA.
  3. What is the non-repetitive peak forward surge current of the BAS16 RFG?
    The non-repetitive peak forward surge current (IFSM) is 2A.
  4. What is the junction temperature range of the BAS16 RFG?
    The junction temperature range (TJ) is -65°C to +150°C.
  5. Is the BAS16 RFG RoHS compliant?
    Yes, the BAS16 RFG is compliant with the RoHS directive 2011/65/EU.
  6. What is the package type of the BAS16 RFG?
    The package type is SOT-23.
  7. What is the forward voltage at 100mA for the BAS16 RFG?
    The forward voltage (VF) at 100mA is 1.0V.
  8. What is the reverse recovery time of the BAS16 RFG?
    The reverse recovery time (Trr) is 4ns.
  9. Is the BAS16 RFG halogen-free?
    Yes, the BAS16 RFG is halogen-free according to IEC 61249-2-21 standards.
  10. What are some typical applications of the BAS16 RFG?
    Typical applications include switching mode power supplies (SMPS) and general-purpose switching and rectification in electronic circuits.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

-
226

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS16 RFG BAS116 RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V
Current - Average Rectified (Io) 150mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 3 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 5 nA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23
Operating Temperature - Junction -65°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
PMEG4010ETR/B115
PMEG4010ETR/B115
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

MUR1620CTHC0G
MUR1620CTHC0G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 200V 16A TO220AB
1N4937GH
1N4937GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4937GHB0G
1N4937GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N5406G B0G
1N5406G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR420 B0G
MUR420 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZX84C24 RFG
BZX84C24 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 24V 300MW SOT23
BZX85C15 R0G
BZX85C15 R0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 1.3W DO204AL
BZV55B2V4 L1G
BZV55B2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZX55C13 A0G
BZX55C13 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 13V 500MW DO35
BZX79C15 A0G
BZX79C15 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 15V 500MW DO35
BZX79C6V8 A0G
BZX79C6V8 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 6.8V 500MW DO35