FFSB10120A-F085
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onsemi FFSB10120A-F085

Manufacturer No:
FFSB10120A-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
1200V 10A AUTO SIC SBD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFSB10120A-F085 is a Silicon Carbide (SiC) Schottky Diode produced by onsemi. This diode leverages the latest SiC technology to offer superior switching performance and higher efficiency compared to traditional silicon-based diodes. It is designed for high-power applications where fast switching times and low losses are critical.

Key Specifications

ParameterValue
Voltage Rating (VDRM)1200 V
Current Rating (IF)10 A (Continuous), 21 A (Pulse)
Forward Voltage Drop (VF)1.45 V @ 10 A
Package TypeTO-263 (D2PAK)
Operating Temperature Range-55°C to 175°C
RoHS ComplianceYes

Key Features

  • High voltage rating of 1200 V, making it suitable for high-power applications.
  • Low forward voltage drop of 1.45 V at 10 A, reducing power losses.
  • Fast switching times due to the SiC technology.
  • High current handling capability with a continuous current rating of 10 A and a pulse current rating of 21 A.
  • TO-263 (D2PAK) package for surface mount applications.
  • Wide operating temperature range from -55°C to 175°C.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The FFSB10120A-F085 SiC Schottky Diode is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Electric vehicle charging infrastructure.
  • High-frequency switching circuits.

Q & A

  1. What is the voltage rating of the FFSB10120A-F085?
    The voltage rating is 1200 V.
  2. What is the continuous current rating of this diode?
    The continuous current rating is 10 A.
  3. What is the forward voltage drop at 10 A?
    The forward voltage drop at 10 A is 1.45 V.
  4. What package type does the FFSB10120A-F085 use?
    The package type is TO-263 (D2PAK).
  5. Is the FFSB10120A-F085 RoHS compliant?
    Yes, it is RoHS compliant.
  6. What is the operating temperature range of this diode?
    The operating temperature range is from -55°C to 175°C.
  7. What are some typical applications for this diode?
    Typical applications include power supplies, motor drives, renewable energy systems, electric vehicle charging, and high-frequency switching circuits.
  8. Why is SiC technology used in this diode?
    SiC technology is used for its superior switching performance and higher efficiency compared to traditional silicon-based diodes.
  9. What is the pulse current rating of the FFSB10120A-F085?
    The pulse current rating is 21 A.
  10. Where can I find detailed specifications for the FFSB10120A-F085?
    Detailed specifications can be found in the datasheet available on the onsemi website and other electronic component distributors like Digi-Key and LCSC.

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):21A (DC)
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:612pF @ 1V, 100kHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
Operating Temperature - Junction:-55°C ~ 175°C
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Similar Products

Part Number FFSB10120A-F085 FFSB20120A-F085 FFSH10120A-F085
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 21A (DC) 32A (DC) 17A (DC)
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 10 A 1.75 V @ 20 A -
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V 200 µA @ 1200 V 200 µA @ 1200 V
Capacitance @ Vr, F 612pF @ 1V, 100kHz 1220pF @ 1V, 100KHz 612pF @ 1V, 100kHz
Mounting Type Surface Mount Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-247-2
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

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