Overview
The MURS110T3G is a high-performance, ultra-fast recovery rectifier diode produced by onsemi. This component is designed for high voltage, high frequency rectification and is suitable for applications requiring compact size and weight efficiency. It features a small, surface mountable package with J-bend leads, making it ideal for automated handling and integration into various electronic systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Repetitive Reverse Voltage (VRRM) | 100 | V |
| Continuous Forward Current (IF(DC)) | 1.0 A @ TL = 159°C | A |
| Non-Repetitive Peak Surge Current (IFSM) | 35 A | A |
| Operating Junction Temperature (TJ) | -65 to +175 °C | °C |
| Maximum Instantaneous Forward Voltage (VF) | 0.875 V @ IF = 1.0 A, TJ = 25°C | V |
| Maximum Reverse Recovery Time (trr) | 35 ns @ IF = 1.0 A, di/dt = 50 A/μs | ns |
| Thermal Resistance Junction-to-Lead (RθJL) | 13 °C/W | °C/W |
| Package Type | SMB (Surface Mount) | |
| Weight | Approximately 95 mg | mg |
| ESD Rating | Human Body Model > 8 kV, Charged Device Model > 1000 V |
Key Features
- Ultra-fast recovery time, making it suitable for high frequency applications.
- Compact surface mountable package with J-bend leads for automated handling.
- High temperature glass passivated junction for reliability.
- Low forward voltage drop (0.875 V @ IF = 1.0 A, TJ = 25°C).
- Pb-free and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
- Corrosion-resistant external surfaces and readily solderable terminal leads.
Applications
The MURS110T3G is ideally suited for various applications including:
- High voltage, high frequency rectification.
- Free wheeling and protection diodes in surface mount applications.
- Automotive and industrial systems requiring high reliability and compact size.
- Power supplies and switching circuits where fast recovery and low forward voltage drop are critical.
Q & A
- What is the peak repetitive reverse voltage of the MURS110T3G?
The peak repetitive reverse voltage (VRRM) is 100 V. - What is the continuous forward current rating of the MURS110T3G?
The continuous forward current (IF(DC)) is 1.0 A at a lead temperature (TL) of 159°C. - What is the maximum surge current capability of the MURS110T3G?
The non-repetitive peak surge current (IFSM) is 35 A. - What is the operating junction temperature range of the MURS110T3G?
The operating junction temperature (TJ) range is -65 to +175 °C. - What is the maximum instantaneous forward voltage of the MURS110T3G?
The maximum instantaneous forward voltage (VF) is 0.875 V at IF = 1.0 A and TJ = 25°C. - What is the reverse recovery time of the MURS110T3G?
The maximum reverse recovery time (trr) is 35 ns at IF = 1.0 A and di/dt = 50 A/μs. - Is the MURS110T3G Pb-free and RoHS compliant?
Yes, the MURS110T3G is Pb-free and RoHS compliant. - What is the thermal resistance junction-to-lead of the MURS110T3G?
The thermal resistance junction-to-lead (RθJL) is 13 °C/W. - What are the typical applications of the MURS110T3G?
The MURS110T3G is typically used in high voltage, high frequency rectification, free wheeling, and protection diodes in surface mount applications. - Is the MURS110T3G suitable for automotive applications?
Yes, the MURS110T3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
