SURS8160T3G
  • Share:

onsemi SURS8160T3G

Manufacturer No:
SURS8160T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SURS8160T3G is a high-performance, ultra-fast recovery rectifier diode produced by onsemi. This component is designed for high voltage and high frequency rectification applications, as well as for use as free-wheeling and protection diodes in surface mount configurations. The SURS8160T3G is part of the SURS8 series, which is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 600 V
Working Peak Reverse Voltage (VRWM) 600 V
DC Blocking Voltage (VR) 600 V
Continuous Forward Current (IF(DC)) 1.0 @ TL = 159°C A
Non-Repetitive Peak Surge Current (IFSM) 35 A
Operating Junction Temperature (TJ) -65 to +175 °C
Maximum Instantaneous Forward Voltage (VF) 0.71 to 1.05 V @ 1.0 A, TJ = 150°C V
Maximum Reverse Recovery Time (trr) 35 to 75 ns ns
Thermal Resistance Junction-to-Lead (RJL) 13 °C/W °C/W
ESD Rating Human Body Model = 3B (> 8 kV), Charged Device Model > 1000 V
Package SMB (Pb-Free)
Weight Approximately 95 mg mg

Key Features

  • Small, compact surface mountable package with J-bend leads
  • Rectangular package for automated handling
  • High temperature glass passivated junction
  • Low forward voltage drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
  • Pb-Free and RoHS compliant
  • Corrosion-resistant external surfaces and readily solderable terminal leads
  • High ESD rating: Human Body Model = 3B (> 8 kV), Charged Device Model > 1000 V

Applications

The SURS8160T3G is ideally suited for high voltage, high frequency rectification applications. It can be used as free-wheeling and protection diodes in surface mount configurations where compact size and weight are critical. This component is particularly useful in automotive and industrial applications that require high reliability and performance.

Q & A

  1. What is the peak repetitive reverse voltage of the SURS8160T3G?

    The peak repetitive reverse voltage (VRRM) of the SURS8160T3G is 600 V.

  2. What is the continuous forward current rating of the SURS8160T3G?

    The continuous forward current (IF(DC)) of the SURS8160T3G is 1.0 A at a lead temperature (TL) of 159°C.

  3. What is the maximum operating junction temperature of the SURS8160T3G?

    The operating junction temperature (TJ) range of the SURS8160T3G is -65 to +175°C.

  4. Is the SURS8160T3G Pb-Free and RoHS compliant?
  5. What is the ESD rating of the SURS8160T3G?

    The ESD rating of the SURS8160T3G is Human Body Model = 3B (> 8 kV) and Charged Device Model > 1000 V.

  6. What package type does the SURS8160T3G come in?

    The SURS8160T3G comes in an SMB (Surface Mount) package.

  7. Is the SURS8160T3G suitable for automotive applications?
  8. What is the thermal resistance junction-to-lead of the SURS8160T3G?

    The thermal resistance junction-to-lead (RJL) of the SURS8160T3G is 13 °C/W.

  9. What is the maximum forward voltage drop of the SURS8160T3G?

    The maximum forward voltage drop (VF) of the SURS8160T3G is 0.71 to 1.05 V at 1.0 A and TJ = 150°C.

  10. What is the maximum reverse recovery time of the SURS8160T3G?

    The maximum reverse recovery time (trr) of the SURS8160T3G is 35 to 75 ns.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
197

Please send RFQ , we will respond immediately.

Same Series
MURS160T3G
MURS160T3G
DIODE GEN PURP 600V 1A SMB
MURS105T3G
MURS105T3G
DIODE GEN PURP 50V 1A SMB
MURS110T3G
MURS110T3G
DIODE GEN PURP 100V 1A SMB
MURS140T3G
MURS140T3G
DIODE GEN PURP 400V 1A SMB
NRVUS120VT3G
NRVUS120VT3G
DIODE GEN PURP 200V 2A SMB
MURS115T3G
MURS115T3G
DIODE GEN PURP 150V 2A SMB
SURS8140T3G-VF01
SURS8140T3G-VF01
DIODE GEN PURP 400V 1A SMB
NRVUS110VT3G
NRVUS110VT3G
DIODE GEN PURP 100V 2A SMB
NRVUS160VT3G
NRVUS160VT3G
DIODE GEN PURP 600V 2A SMB
MURS105T3
MURS105T3
DIODE GEN PURP 50V 2A SMB
SURS8160T3G
SURS8160T3G
DIODE GEN PURP 600V 1A SMB
SURS8120T3G
SURS8120T3G
DIODE GEN PURP 200V 1A SMB

Similar Products

Part Number SURS8160T3G SURS8260T3G SURS8360T3G SURA8160T3G SURHS8160T3G SURS8110T3G SURS8120T3G SURS8140T3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 2A 3A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.45 V @ 2 A 1.25 V @ 3 A 1.25 V @ 1 A 2.4 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 35 ns 35 ns 35 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V 5 µA @ 600 V 20 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AC, SMA DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMB SMC SMA SMB SMB SMB SMB
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BAS16THVL
BAS16THVL
Nexperia USA Inc.
BAS16TH/SOT23/TO-236AB
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
STPS1045SF
STPS1045SF
STMicroelectronics
45V POWER SCHOTTKY RECTIFIER
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB

Related Product By Brand

BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223