SURS8160T3G
  • Share:

onsemi SURS8160T3G

Manufacturer No:
SURS8160T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SURS8160T3G is a high-performance, ultra-fast recovery rectifier diode produced by onsemi. This component is designed for high voltage and high frequency rectification applications, as well as for use as free-wheeling and protection diodes in surface mount configurations. The SURS8160T3G is part of the SURS8 series, which is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 600 V
Working Peak Reverse Voltage (VRWM) 600 V
DC Blocking Voltage (VR) 600 V
Continuous Forward Current (IF(DC)) 1.0 @ TL = 159°C A
Non-Repetitive Peak Surge Current (IFSM) 35 A
Operating Junction Temperature (TJ) -65 to +175 °C
Maximum Instantaneous Forward Voltage (VF) 0.71 to 1.05 V @ 1.0 A, TJ = 150°C V
Maximum Reverse Recovery Time (trr) 35 to 75 ns ns
Thermal Resistance Junction-to-Lead (RJL) 13 °C/W °C/W
ESD Rating Human Body Model = 3B (> 8 kV), Charged Device Model > 1000 V
Package SMB (Pb-Free)
Weight Approximately 95 mg mg

Key Features

  • Small, compact surface mountable package with J-bend leads
  • Rectangular package for automated handling
  • High temperature glass passivated junction
  • Low forward voltage drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
  • Pb-Free and RoHS compliant
  • Corrosion-resistant external surfaces and readily solderable terminal leads
  • High ESD rating: Human Body Model = 3B (> 8 kV), Charged Device Model > 1000 V

Applications

The SURS8160T3G is ideally suited for high voltage, high frequency rectification applications. It can be used as free-wheeling and protection diodes in surface mount configurations where compact size and weight are critical. This component is particularly useful in automotive and industrial applications that require high reliability and performance.

Q & A

  1. What is the peak repetitive reverse voltage of the SURS8160T3G?

    The peak repetitive reverse voltage (VRRM) of the SURS8160T3G is 600 V.

  2. What is the continuous forward current rating of the SURS8160T3G?

    The continuous forward current (IF(DC)) of the SURS8160T3G is 1.0 A at a lead temperature (TL) of 159°C.

  3. What is the maximum operating junction temperature of the SURS8160T3G?

    The operating junction temperature (TJ) range of the SURS8160T3G is -65 to +175°C.

  4. Is the SURS8160T3G Pb-Free and RoHS compliant?
  5. What is the ESD rating of the SURS8160T3G?

    The ESD rating of the SURS8160T3G is Human Body Model = 3B (> 8 kV) and Charged Device Model > 1000 V.

  6. What package type does the SURS8160T3G come in?

    The SURS8160T3G comes in an SMB (Surface Mount) package.

  7. Is the SURS8160T3G suitable for automotive applications?
  8. What is the thermal resistance junction-to-lead of the SURS8160T3G?

    The thermal resistance junction-to-lead (RJL) of the SURS8160T3G is 13 °C/W.

  9. What is the maximum forward voltage drop of the SURS8160T3G?

    The maximum forward voltage drop (VF) of the SURS8160T3G is 0.71 to 1.05 V at 1.0 A and TJ = 150°C.

  10. What is the maximum reverse recovery time of the SURS8160T3G?

    The maximum reverse recovery time (trr) of the SURS8160T3G is 35 to 75 ns.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
197

Please send RFQ , we will respond immediately.

Same Series
MURS160T3G
MURS160T3G
DIODE GEN PURP 600V 1A SMB
MURS105T3G
MURS105T3G
DIODE GEN PURP 50V 1A SMB
MURS110T3G
MURS110T3G
DIODE GEN PURP 100V 1A SMB
MURS140T3G
MURS140T3G
DIODE GEN PURP 400V 1A SMB
NRVUS120VT3G
NRVUS120VT3G
DIODE GEN PURP 200V 2A SMB
MURS115T3G
MURS115T3G
DIODE GEN PURP 150V 2A SMB
NRVUS110VT3G
NRVUS110VT3G
DIODE GEN PURP 100V 2A SMB
NRVUS160VT3G
NRVUS160VT3G
DIODE GEN PURP 600V 2A SMB
MURS105T3
MURS105T3
DIODE GEN PURP 50V 2A SMB
SURS8160T3G
SURS8160T3G
DIODE GEN PURP 600V 1A SMB
SURS8120T3G
SURS8120T3G
DIODE GEN PURP 200V 1A SMB
SURS8120T3G-IR01
SURS8120T3G-IR01
DIODE GP ULT FAST 200V 1A SMB

Similar Products

Part Number SURS8160T3G SURS8260T3G SURS8360T3G SURA8160T3G SURHS8160T3G SURS8110T3G SURS8120T3G SURS8140T3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 2A 3A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.45 V @ 2 A 1.25 V @ 3 A 1.25 V @ 1 A 2.4 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 35 ns 35 ns 35 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V 5 µA @ 600 V 20 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AC, SMA DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMB SMC SMA SMB SMB SMB SMB
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
MBR120LSFT3G
MBR120LSFT3G
onsemi
DIODE SCHOTTKY 20V 1A SOD123L
BAT54WSQ-7-F
BAT54WSQ-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 100MA SOD323
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
1N4148WHE3-TP
1N4148WHE3-TP
Micro Commercial Co
400MW SWITCHING DIODES SOD-123
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT54-7-G
BAT54-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23

Related Product By Brand

BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
BD677AG
BD677AG
onsemi
TRANS NPN DARL 60V 4A TO126
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN