SURS8160T3G
  • Share:

onsemi SURS8160T3G

Manufacturer No:
SURS8160T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SURS8160T3G is a high-performance, ultra-fast recovery rectifier diode produced by onsemi. This component is designed for high voltage and high frequency rectification applications, as well as for use as free-wheeling and protection diodes in surface mount configurations. The SURS8160T3G is part of the SURS8 series, which is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Value Unit
Peak Repetitive Reverse Voltage (VRRM) 600 V
Working Peak Reverse Voltage (VRWM) 600 V
DC Blocking Voltage (VR) 600 V
Continuous Forward Current (IF(DC)) 1.0 @ TL = 159°C A
Non-Repetitive Peak Surge Current (IFSM) 35 A
Operating Junction Temperature (TJ) -65 to +175 °C
Maximum Instantaneous Forward Voltage (VF) 0.71 to 1.05 V @ 1.0 A, TJ = 150°C V
Maximum Reverse Recovery Time (trr) 35 to 75 ns ns
Thermal Resistance Junction-to-Lead (RJL) 13 °C/W °C/W
ESD Rating Human Body Model = 3B (> 8 kV), Charged Device Model > 1000 V
Package SMB (Pb-Free)
Weight Approximately 95 mg mg

Key Features

  • Small, compact surface mountable package with J-bend leads
  • Rectangular package for automated handling
  • High temperature glass passivated junction
  • Low forward voltage drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
  • Pb-Free and RoHS compliant
  • Corrosion-resistant external surfaces and readily solderable terminal leads
  • High ESD rating: Human Body Model = 3B (> 8 kV), Charged Device Model > 1000 V

Applications

The SURS8160T3G is ideally suited for high voltage, high frequency rectification applications. It can be used as free-wheeling and protection diodes in surface mount configurations where compact size and weight are critical. This component is particularly useful in automotive and industrial applications that require high reliability and performance.

Q & A

  1. What is the peak repetitive reverse voltage of the SURS8160T3G?

    The peak repetitive reverse voltage (VRRM) of the SURS8160T3G is 600 V.

  2. What is the continuous forward current rating of the SURS8160T3G?

    The continuous forward current (IF(DC)) of the SURS8160T3G is 1.0 A at a lead temperature (TL) of 159°C.

  3. What is the maximum operating junction temperature of the SURS8160T3G?

    The operating junction temperature (TJ) range of the SURS8160T3G is -65 to +175°C.

  4. Is the SURS8160T3G Pb-Free and RoHS compliant?
  5. What is the ESD rating of the SURS8160T3G?

    The ESD rating of the SURS8160T3G is Human Body Model = 3B (> 8 kV) and Charged Device Model > 1000 V.

  6. What package type does the SURS8160T3G come in?

    The SURS8160T3G comes in an SMB (Surface Mount) package.

  7. Is the SURS8160T3G suitable for automotive applications?
  8. What is the thermal resistance junction-to-lead of the SURS8160T3G?

    The thermal resistance junction-to-lead (RJL) of the SURS8160T3G is 13 °C/W.

  9. What is the maximum forward voltage drop of the SURS8160T3G?

    The maximum forward voltage drop (VF) of the SURS8160T3G is 0.71 to 1.05 V at 1.0 A and TJ = 150°C.

  10. What is the maximum reverse recovery time of the SURS8160T3G?

    The maximum reverse recovery time (trr) of the SURS8160T3G is 35 to 75 ns.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
197

Please send RFQ , we will respond immediately.

Same Series
MURS160T3G
MURS160T3G
DIODE GEN PURP 600V 1A SMB
MURS105T3G
MURS105T3G
DIODE GEN PURP 50V 1A SMB
MURS110T3G
MURS110T3G
DIODE GEN PURP 100V 1A SMB
MURS140T3G
MURS140T3G
DIODE GEN PURP 400V 1A SMB
NRVUS120VT3G
NRVUS120VT3G
DIODE GEN PURP 200V 2A SMB
MURS115T3G
MURS115T3G
DIODE GEN PURP 150V 2A SMB
SURS8140T3G-VF01
SURS8140T3G-VF01
DIODE GEN PURP 400V 1A SMB
NRVUS160VT3G
NRVUS160VT3G
DIODE GEN PURP 600V 2A SMB
MURS105T3
MURS105T3
DIODE GEN PURP 50V 2A SMB
SURS8160T3G
SURS8160T3G
DIODE GEN PURP 600V 1A SMB
SURS8120T3G
SURS8120T3G
DIODE GEN PURP 200V 1A SMB
SURS8120T3G-IR01
SURS8120T3G-IR01
DIODE GP ULT FAST 200V 1A SMB

Similar Products

Part Number SURS8160T3G SURS8260T3G SURS8360T3G SURA8160T3G SURHS8160T3G SURS8110T3G SURS8120T3G SURS8140T3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Active Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 1A 2A 3A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.45 V @ 2 A 1.25 V @ 3 A 1.25 V @ 1 A 2.4 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.25 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 75 ns 35 ns 35 ns 35 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V 5 µA @ 600 V 20 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AC, SMA DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMB SMC SMA SMB SMB SMB SMB
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
STPS20SM100ST
STPS20SM100ST
STMicroelectronics
DIODE SCHOTTKY 100V 20A TO220AB
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
STTH108A
STTH108A
STMicroelectronics
DIODE GEN PURP 800V 1A SMA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
STPSC10H065D
STPSC10H065D
STMicroelectronics
DIODE SCHOTTKY 650V 10A TO220AC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
STPS2H100AFN
STPS2H100AFN
STMicroelectronics
100 V, 2 A POWER SCHOTTKY RECTIF
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR