MURS105T3G
  • Share:

onsemi MURS105T3G

Manufacturer No:
MURS105T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 50V 1A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURS105T3G by onsemi is a power rectifier characterized by its ultra-fast recovery, making it suitable for a wide range of applications that require rapid switching performance. This rectifier is designed to handle a continuous forward current of 1 A at a maximum reverse voltage of 50 V. Packaged in an SMB (DO-214AA) form factor, it features a two-pin configuration which allows for easy integration into various circuit designs. The part is also compliant with RoHS, denoting it as free from hazardous materials commonly restricted in electronic components.

Key Specifications

AttributeValue
Average Rectified Current-Max1 A
Peak Current-Max40 A
Reverse Voltage-Max [Vrrm]50 V
Reverse Current-Max2 µA
Forward Voltage0.875 V
ConfigurationSingle
Reverse Recovery Time-Max35 ns
Thermal Resistance13°C/W
Operating Temp Range-65°C to +175°C
Storage Temperature Range-65°C to +175°C
Package TypeSMB (DO-214AA)
Mounting MethodSurface Mount
Diode TechnologySilicon Junction
Pin Count2

Key Features

  • Ultra-fast recovery time of 35 ns, enhancing the efficiency of the application by minimizing losses during switching.
  • Maximum forward voltage of 0.875 V, contributing to high efficiency in power conversion and control.
  • Robust performance under surge conditions with a maximum non-repetitive peak forward current of 40 A.
  • Wide operating temperature range from -65°C to +175°C, accommodating extreme conditions.[
  • Compliant with RoHS, ensuring the component is free from hazardous materials.
  • Surface mount package (SMB DO-214AA) for easy integration into various circuit designs.[

Applications

The MURS105T3G is versatile and can be used across a broad spectrum of industries:

  • Space Technology: Suitable for power supply circuits in satellites due to its robust operating temperature range and rapid switching capabilities.
  • Aerospace and Defense: Potential use in avionics systems, military communication devices, or other defense-related electronics requiring fast and reliable power rectification.
  • Energy and Power Systems: Can be used in power conversion systems, renewable energy inverters, or power supplies for high-performance computing, where its efficiency in rapidly switching states can improve overall system performance.

Q & A

  1. What is the maximum reverse voltage of the MURS105T3G?
    The maximum reverse voltage of the MURS105T3G is 50 V.
  2. What is the forward voltage of the MURS105T3G?
    The forward voltage of the MURS105T3G is 0.875 V.
  3. What is the reverse recovery time of the MURS105T3G?
    The reverse recovery time of the MURS105T3G is 35 ns.
  4. What is the operating temperature range of the MURS105T3G?
    The operating temperature range of the MURS105T3G is from -65°C to +175°C.
  5. Is the MURS105T3G RoHS compliant?
    Yes, the MURS105T3G is RoHS compliant.
  6. What is the package type of the MURS105T3G?
    The package type of the MURS105T3G is SMB (DO-214AA).
  7. What is the mounting method of the MURS105T3G?
    The mounting method of the MURS105T3G is surface mount.
  8. What is the maximum non-repetitive peak forward current of the MURS105T3G?
    The maximum non-repetitive peak forward current of the MURS105T3G is 40 A.
  9. What is the thermal resistance of the MURS105T3G?
    The thermal resistance of the MURS105T3G is 13°C/W.
  10. What industries can the MURS105T3G be used in?
    The MURS105T3G can be used in space technology, aerospace and defense, and energy and power systems.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 50 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.50
1,706

Please send RFQ , we will respond immediately.

Same Series
MURS120T3G
MURS120T3G
DIODE GEN PURP 200V 1A SMB
MURS160T3G
MURS160T3G
DIODE GEN PURP 600V 1A SMB
MURS105T3G
MURS105T3G
DIODE GEN PURP 50V 1A SMB
MURS110T3G
MURS110T3G
DIODE GEN PURP 100V 1A SMB
NRVUS120VT3G
NRVUS120VT3G
DIODE GEN PURP 200V 2A SMB
MURS115T3G
MURS115T3G
DIODE GEN PURP 150V 2A SMB
SURS8140T3G-VF01
SURS8140T3G-VF01
DIODE GEN PURP 400V 1A SMB
NRVUS110VT3G
NRVUS110VT3G
DIODE GEN PURP 100V 2A SMB
NRVUS160VT3G
NRVUS160VT3G
DIODE GEN PURP 600V 2A SMB
MURS105T3
MURS105T3
DIODE GEN PURP 50V 2A SMB
SURS8160T3G
SURS8160T3G
DIODE GEN PURP 600V 1A SMB
SURS8120T3G-IR01
SURS8120T3G-IR01
DIODE GP ULT FAST 200V 1A SMB

Similar Products

Part Number MURS105T3G MURS205T3G MURS115T3G MURA105T3G MURS105T3
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 150 V 50 V 50 V
Current - Average Rectified (Io) 1A 2A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 1 A 940 mV @ 2 A 875 mV @ 1 A 875 mV @ 1 A 875 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 30 ns 35 ns 30 ns 35 ns
Current - Reverse Leakage @ Vr 2 µA @ 50 V 2 µA @ 50 V 2 µA @ 150 V 2 µA @ 50 V 2 µA @ 50 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AA, SMB DO-214AC, SMA DO-214AA, SMB
Supplier Device Package SMB SMB SMB SMA SMB
Operating Temperature - Junction -65°C ~ 175°C -60°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
1N4007GP-AQ
1N4007GP-AQ
Diotec Semiconductor
DIODE STD DO-41 1000V 1A
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
1N5711UR-1E3
1N5711UR-1E3
Microchip Technology
SCHOTTKY BARRIER DIODE MELF SURF
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT