MURA160T3G
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onsemi MURA160T3G

Manufacturer No:
MURA160T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 1A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURA160T3G is a high-performance, ultra-fast recovery power rectifier produced by onsemi. This device is designed for high voltage, high frequency rectification and is also suitable for use as free-wheeling and protection diodes in surface mount applications. The MURA160T3G features a small, compact SMA (DO-214AC, SOD-106) package with J-bend leads, making it ideal for systems where compact size and weight are critical. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding applications.

Key Specifications

Characteristic Symbol Value Unit
Average Rectified Forward Current IF(AV) 1.0 A (TL = 145°C), 2.0 A (TL = 110°C) A
Peak Repetitive Reverse Voltage VRRM 600 V V
Non-Repetitive Peak Surge Current IFSM 30 A A
Maximum Instantaneous Forward Voltage vF 1.25 V (TJ = 25°C), 1.05 V (TJ = 150°C) V
Reverse Recovery Time trr 75 ns ns
Operating Junction Temperature Range TJ -65°C to +175°C °C
Thermal Resistance, Junction-to-Ambient RJA 216 °C/W °C/W
Package Style SMA (DO-214AC, SOD-106)
Mounting Method Surface Mount

Key Features

  • Ultra-fast recovery time of 75 ns, making it suitable for high frequency applications.
  • Small, compact SMA package with J-bend leads, ideal for automated handling and surface mount applications.
  • High temperature glass passivated junction for enhanced reliability.
  • Low forward voltage drop of 1.05 V max at 1.0 A and TJ = 150°C.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • ESD protection: Human Body Model > 4000 V (Class 3).

Applications

The MURA160T3G is ideally suited for various high voltage and high frequency applications, including:

  • High voltage rectification in power supplies and converters.
  • Free-wheeling diodes in power electronic circuits.
  • Protection diodes in surface mount applications where compact size is critical.
  • Automotive systems requiring AEC-Q101 qualified components.

Q & A

  1. What is the maximum reverse voltage rating of the MURA160T3G?

    The maximum reverse voltage rating is 600 V.

  2. What is the average rectified forward current rating at TL = 145°C?

    The average rectified forward current rating at TL = 145°C is 1.0 A.

  3. What is the reverse recovery time of the MURA160T3G?

    The reverse recovery time is 75 ns.

  4. Is the MURA160T3G AEC-Q101 qualified?
  5. What is the operating junction temperature range of the MURA160T3G?

    The operating junction temperature range is -65°C to +175°C.

  6. Is the MURA160T3G Pb-free and RoHS compliant?
  7. What is the thermal resistance, junction-to-ambient, of the MURA160T3G?

    The thermal resistance, junction-to-ambient, is 216 °C/W.

  8. What type of package does the MURA160T3G use?

    The MURA160T3G uses an SMA (DO-214AC, SOD-106) package.

  9. What is the maximum instantaneous forward voltage at TJ = 150°C?

    The maximum instantaneous forward voltage at TJ = 150°C is 1.05 V.

  10. Does the MURA160T3G have ESD protection? 4000 V (Class 3).

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-65°C ~ 175°C
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Same Series
MURA160T3G
MURA160T3G
DIODE GEN PURP 600V 1A SMA
NRVUA160VT3G
NRVUA160VT3G
DIODE GEN PURP 600V 2A SMA

Similar Products

Part Number MURA160T3G MURA260T3G MURA160T3H MURA110T3G MURA120T3G MURA130T3G MURA140T3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 100 V 200 V 300 V 400 V
Current - Average Rectified (Io) 1A 2A 2A 1A 1A (DC) 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 1 A 1.45 V @ 2 A 1.25 V @ 1 A 875 mV @ 1 A 875 mV @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 75 ns 30 ns 35 ns 65 ns 65 ns
Current - Reverse Leakage @ Vr 5 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 2 µA @ 100 V 2 µA @ 200 V 5 µA @ 300 V 5 µA @ 400 V
Capacitance @ Vr, F - - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA SMA SMA
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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